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Olen nõus

Alar Gerst

https://www.etis.ee/CV/Alar_Gerst/est
11.11.1937
737 4657, 737 4614
alar.gerst@ut.ee

Teenistuskäik

Töökohad ja ametid
01.01.2008–31.01.2008   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, insener (1,00)
01.01.2002–31.05.2005   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, insener (0,50)
 
 
Haridustee
1956–1961   
Tartu Riiklik Ülikool, füüsika (optika)
1945–1956   
Kehra Keskkool

Kvalifikatsioon

Teaduskraadid
Alar Gerst, magistrikraad, 1961, (juh) Uno Nõmm, Fotodielektriline polarisatsioon Zn.CdS luminofoorides, Tartu Riiklik Ülikool.
 
 
Teaduspreemiad ja tunnustused
1982, Alar Gerst, Eesti Riiklik Preemia teaduse ja tehnika vallas (kollektiivi koosseisus) töödetsükli "Pooljuhtheterosiirete uurimine ning injektsioonlaserite loomine neliksüsteemil AlGaAsSb" eest
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.12. Protsessitehnoloogia ja materjaliteadus; TÄPSUSTUS: Nanomõõtmeliste metall-dielektrikstruktuuride pinnanähtused, elektrilised omadused ja gaasitundlikkus.

Lõppenud projektid

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2014
Jaaniso, Raivo; Kahro, Tauno; Kozlova, Jekaterina; Aarik, Jaan; Aarik, Lauri; Alles, Harry; Floren, Aare; Gerst, Alar; Kasikov, Aarne; Niilisk, Ahti; Sammelselg, Väino (2014). Temperature induced inversion of oxygen response in CVD graphene on SiO2. Sensors and Actuators B-Chemical, 190, 1006−1013. DOI: 10.1016/j.snb.2013.09.068.
1.1.
2013
Rosental, Arnold; Tarre, Aivar; Gerst, Alar; Kasikov, Aarne; Lu, Jun; Ottosson, Mikael; Uustare, Teet (2013). Epitaxial single and double nanolayers of SnO2 and TiO2 for resistive gas sensors. IEEE Sensors Journal, 13 (5), 1648−1655.10.1109/JSEN.2013.2238227.
1.1.
2009
Kasikov, A.; Gerst, A.; Kikas, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2009). Pt coated Cr2O3 thin films for gas sensors. Central European Journal of Physics, 7 (2), 356−362. DOI: 10.2478/s11534-009-0049-1.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Tarre, A.; Rosental, A.; Gerst, A.; Uustare, T.; Ottosson, M.; Lu, J. (2009). GAS-SENSITIVE NANOLAYERED SINGLE-CRYSTALLINE SnO2. Book of abstracts: 9th Baltic Conference on Atomic Layer Deposition (BALD 2009); The Ångström Laboratory, Uppsala University, Sweden; June 15-16, 2009. _EditorsAbbr Prof. Anders Hårsta. Uppsala University, Uppsala, Sweden, P22.
5.2.
2008
Kasikov, A.; Gerst, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2008). Sensitizing Cr2O3 thin films for resistive gas sensors by Pt coating. 6th solid state surfaces and interfaces. November 24-27, 2008 Smolenice Castle, Slovak Republic. Extended abstract book.: 6th solid state surfaces and interfaces. Smolenice, Slovakkia, 24.-27. november 2008. Ed. Brunner, R. Bratislava: Comenius University, 26−29.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
3.4.
2007
Jaaniso, R.; Gerst, A.; Floren, A.; Avarmaa, T.; Sammelselg, V.; Mändar, H. (2007). Electrical and gas sensing properties of Cr< sub >2O< sub >3 -TiO2 thin films made by pulsed laser deposition. Proceedings of IEEE Sensors 2006: The 5th IEEE Conference on Sensors; Daegu, Korea; October 22-25, 2006. IEEE Sensors Council, 708−711.
5.2.
2007
Kärkkänen, I.; Floren, A.; Mändar, H.; Uustare, T.; Niilisk, A.; Gerst, A.; Avarmaa, T.; Jaaniso, R. (2007). Sensitivity to different gases of cobalt oxide based sensors on silicon substrate. Abstracts of ICPS 2007: ICPS 2007; London; 10-16 august 2007. 74.
5.2.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Rosental, A. (2007). Electrical behavior and gas response of epitaxial SnO2 and Cr2O3 films: a comparative study. Proc. 41st Annual Conf. of the Finnish Physical Society. Toim. Vainio, R.; Pomoell, J.; Louhivuori, M. Helsinki: University of Helsinki, 114.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2006
Floren, A.; Gerst, A.; Avarmaa, T.; Sammelselg, V.; Mändar, H.; Jaaniso, R. (2006). Characterization of nanostructural Cr2O3-TiO2 thin films made by pulsed laser deposition. XVIII International School on Physics and Chemistry of Condensed Matter Spectroscopy of Modern Materials; Bialowieza, Poland; 1.-8.07.2006.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
1.1.
2003
Rosenthal, A.; Tarre, A.; Gerst, A.; Sundqvist, J.; Harsta, A.; Aidla, A.; Aarik, J.; Sammelselg, V.; Uustare, T. (2003). Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition. Sensors and Actuators B-Chemical, 93, 552−555.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V.; Gerst, A. (2002). Atomic layer SnCl4-H2O2 growth of SnO2 on r-cut sapphire substrates. Abstracts: The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, October 24-26, 2002. Ed. Rosental, A. Tartu: Tartu University Press, 23.
1.1.
2001
Rosental, A.; Tarre, A.; Gerst, A.; Uustare, T.; Sammelselg, V. (2001). Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications. Sensors and Actuators B-Chemical, 77, 297−300.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1997
Rosental, A.; Adamson, P.; Gerst, A.; Koppel, H.; Tarre, A. (1997). Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection. Applied Surface Science, 112, 82−86.
3.1.
1997
Rosental, A.; Tarre, A.; Gerst, A.; Adamson, P.; Sammelselg, V.; Uustare, T. (1997). Atomic-layer-deposited TiO2 dielectric coatings. Optical Inorganic Dielectric Materials and Devices, 2967: International Conference on Advanced Optical Materials and Devices (AOMD 96) - Optical Inorganic Dielectric Materials and Devices; Riga, Latvia; 26-29 August, 1996. Ed. Krumins, A.; Millers, D.K.; Sternberg, A.; Spigulis, J. SPIE, 245−250. (Proceedings of SPIE).
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
1.1.
1965
Niilisk, AI.; Gerst, AV.; Kirs, YY. (1965). Influence of high pressure on photoconductivity of some semiconductors. Soviet Physics: Solid State, 7 (3), 744−746.
10.09.2019

Alar Gerst

https://www.etis.ee/CV/Alar_Gerst/eng
11.11.1937
737 4657, 737 4614
alar.gerst@ut.ee

Career

Institutions and positions
01.01.2008–31.01.2008   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Engineer (1,00)
 
 
Education
1956–1961   
Tartu Riiklik Ülikool, füüsika (optika)
1945–1956   
Kehra Secondary School

Qualifications

Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.12. Process Technology and Materials Science; SPECIFICATION: Surface phenomena, electrical and gas sensing properties of nanodimensional metal-dielectric structures.
 
 

Completed projects

Supervised dissertations

Publications

Category
Year
Publication
 
1.1.
2014
Jaaniso, Raivo; Kahro, Tauno; Kozlova, Jekaterina; Aarik, Jaan; Aarik, Lauri; Alles, Harry; Floren, Aare; Gerst, Alar; Kasikov, Aarne; Niilisk, Ahti; Sammelselg, Väino (2014). Temperature induced inversion of oxygen response in CVD graphene on SiO2. Sensors and Actuators B-Chemical, 190, 1006−1013. DOI: 10.1016/j.snb.2013.09.068.
1.1.
2013
Rosental, Arnold; Tarre, Aivar; Gerst, Alar; Kasikov, Aarne; Lu, Jun; Ottosson, Mikael; Uustare, Teet (2013). Epitaxial single and double nanolayers of SnO2 and TiO2 for resistive gas sensors. IEEE Sensors Journal, 13 (5), 1648−1655.10.1109/JSEN.2013.2238227.
1.1.
2009
Kasikov, A.; Gerst, A.; Kikas, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2009). Pt coated Cr2O3 thin films for gas sensors. Central European Journal of Physics, 7 (2), 356−362. DOI: 10.2478/s11534-009-0049-1.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Tarre, A.; Rosental, A.; Gerst, A.; Uustare, T.; Ottosson, M.; Lu, J. (2009). GAS-SENSITIVE NANOLAYERED SINGLE-CRYSTALLINE SnO2. Book of abstracts: 9th Baltic Conference on Atomic Layer Deposition (BALD 2009); The Ångström Laboratory, Uppsala University, Sweden; June 15-16, 2009. _EditorsAbbr Prof. Anders Hårsta. Uppsala University, Uppsala, Sweden, P22.
5.2.
2008
Kasikov, A.; Gerst, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2008). Sensitizing Cr2O3 thin films for resistive gas sensors by Pt coating. 6th solid state surfaces and interfaces. November 24-27, 2008 Smolenice Castle, Slovak Republic. Extended abstract book.: 6th solid state surfaces and interfaces. Smolenice, Slovakkia, 24.-27. november 2008. Ed. Brunner, R. Bratislava: Comenius University, 26−29.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
3.4.
2007
Jaaniso, R.; Gerst, A.; Floren, A.; Avarmaa, T.; Sammelselg, V.; Mändar, H. (2007). Electrical and gas sensing properties of Cr< sub >2O< sub >3 -TiO2 thin films made by pulsed laser deposition. Proceedings of IEEE Sensors 2006: The 5th IEEE Conference on Sensors; Daegu, Korea; October 22-25, 2006. IEEE Sensors Council, 708−711.
5.2.
2007
Kärkkänen, I.; Floren, A.; Mändar, H.; Uustare, T.; Niilisk, A.; Gerst, A.; Avarmaa, T.; Jaaniso, R. (2007). Sensitivity to different gases of cobalt oxide based sensors on silicon substrate. Abstracts of ICPS 2007: ICPS 2007; London; 10-16 august 2007. 74.
5.2.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Rosental, A. (2007). Electrical behavior and gas response of epitaxial SnO2 and Cr2O3 films: a comparative study. Proc. 41st Annual Conf. of the Finnish Physical Society. Toim. Vainio, R.; Pomoell, J.; Louhivuori, M. Helsinki: University of Helsinki, 114.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2006
Floren, A.; Gerst, A.; Avarmaa, T.; Sammelselg, V.; Mändar, H.; Jaaniso, R. (2006). Characterization of nanostructural Cr2O3-TiO2 thin films made by pulsed laser deposition. XVIII International School on Physics and Chemistry of Condensed Matter Spectroscopy of Modern Materials; Bialowieza, Poland; 1.-8.07.2006.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
1.1.
2003
Rosenthal, A.; Tarre, A.; Gerst, A.; Sundqvist, J.; Harsta, A.; Aidla, A.; Aarik, J.; Sammelselg, V.; Uustare, T. (2003). Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition. Sensors and Actuators B-Chemical, 93, 552−555.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V.; Gerst, A. (2002). Atomic layer SnCl4-H2O2 growth of SnO2 on r-cut sapphire substrates. Abstracts: The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, October 24-26, 2002. Ed. Rosental, A. Tartu: Tartu University Press, 23.
1.1.
2001
Rosental, A.; Tarre, A.; Gerst, A.; Uustare, T.; Sammelselg, V. (2001). Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications. Sensors and Actuators B-Chemical, 77, 297−300.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1997
Rosental, A.; Adamson, P.; Gerst, A.; Koppel, H.; Tarre, A. (1997). Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection. Applied Surface Science, 112, 82−86.
3.1.
1997
Rosental, A.; Tarre, A.; Gerst, A.; Adamson, P.; Sammelselg, V.; Uustare, T. (1997). Atomic-layer-deposited TiO2 dielectric coatings. Optical Inorganic Dielectric Materials and Devices, 2967: International Conference on Advanced Optical Materials and Devices (AOMD 96) - Optical Inorganic Dielectric Materials and Devices; Riga, Latvia; 26-29 August, 1996. Ed. Krumins, A.; Millers, D.K.; Sternberg, A.; Spigulis, J. SPIE, 245−250. (Proceedings of SPIE).
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
1.1.
1965
Niilisk, AI.; Gerst, AV.; Kirs, YY. (1965). Influence of high pressure on photoconductivity of some semiconductors. Soviet Physics: Solid State, 7 (3), 744−746.
10.09.2019

Otsi projekti

  • {{item.Name}}
Asutus on projekti finantseerija   Asutus on projekti teostaja  
  • {{searchListItem.Name}}
Kõik   Tavaprojektid   Ülemprojektid   Alamprojektid  
Uus Frascati (2015)
Uus ja vana Frascati (otsing uue järgi väljastab ka seotud vanad)
Kõik
Käimasolevad
Lõppenud
Algus
Hajus
Täpne
Lihtotsing Tühjenda
  • Leitud 6 kirjet
ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
1.1.5.3.4.2.2.LLTFY17350Energiamuundamiskadude väljaselgitamine ja vähendamine ökonoomsetes päikesepatareides09.03.201709.05.2020Jaan AarikTartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut481 390,00 EUR
IUTIUT2-24Kilestruktuurid nanoelektroonika rakendusteks ja funktsionaalseteks pinnakateteks01.01.201331.12.2018Väino SammelselgTartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut2 688 000,00 EUR
MUUSLOFY12164T (3.2.1101.12-0026)Metalli pindasid funktsionaliseerivad ja kaitsvad õhukesed nanomaterjalidest pinnakatted01.07.201231.12.2014Väino SammelselgTartu Ülikool406 915,50 EUR
SFSF0382149s02Nanostruktuursed materjalid01.01.200231.12.2006Arnold RosentalTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut792 696,19 EUR
MUUSLOKT12180T (3.2.1101.12-0019)Süsinik-nanomaterjalide funktsionalisatsioon, süntees, karakteriseerimine ja rakendused01.04.201231.03.2015Enn LustTartu Ülikool438 035,50 EUR
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