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Olen nõus

Arnold Rosental

https://www.etis.ee/CV/Arnold_Rosental/est
29.08.1937
20.03.2014
29.08.1937 - 20.03.2014

Teenistuskäik

Töökohad ja ametid
01.01.1961–...   
FI: 1961-2 v. meh., 1962-4 n. tead., 1964-7 asp., 1967-75 n. tead., 1975-86 v. tead., 1986-90 j. tead., 1990-2 v. tead., 1992-2002 r. juh., 2003-… erak. v. tead.; TÜ 1967-73 tunnitas., 1976-82 v. õp., 1982-95 dots.
01.01.2008–31.12.2009   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,40)
01.01.2007–31.12.2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
01.01.2006–31.12.2006   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,70)
2005–2005   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
01.01.2005–31.12.2008   
AS Eesti Nanotehnoloogiate Arenduskeskus: projektijuht
2003–2004   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, erakorraline vanemteadur (0,50)
 
 
Haridustee
1956–1961   
Tartu Riiklik Ülikool
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
1980−...   
1992-2002 FI r. juh., 1989-2007 FI nõuk., 1980-9 vabariikl. progr. teadussekr., 1997-8 EIF proj. juh., 2000-3 EL ekstsel. kesk. progr. juh., 2002-6 sihtteema juh., 2004-6 TKN ekspertgr., 2005-8 TAK proj. juh., 1980-2004 9 teadusfoorumi korraldaja

Kvalifikatsioon

Teaduskraadid
Arnold Rosental, doktorikraad, 1974, (juh) , Некоторые особенности тока, ограниченного объемным зарядом, в твердом теле, Tartu Ülikool.
 
 
Teaduspreemiad ja tunnustused
1982, Arnold Rosental, Eesti NSV Riiklik Preemia
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.10. Füüsika; TÄPSUSTUS: Enamuslaengukandjate injektsioon pooljuhtides, pooljuhtlaserid, oksiidide aatomkihtsadestamine, aatomkihtsadestamise optiline reaalajaseire, pooljuht-gaasisensorid

Lõppenud projektid

Juhendamisel väitekirjad

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2013
Rosental, Arnold; Tarre, Aivar; Gerst, Alar; Kasikov, Aarne; Lu, Jun; Ottosson, Mikael; Uustare, Teet (2013). Epitaxial single and double nanolayers of SnO2 and TiO2 for resistive gas sensors. IEEE Sensors Journal, 13 (5), 1648−1655.10.1109/JSEN.2013.2238227.
1.1.
2013
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; Rosental, Arnold (2013). Atomic layer deposition of epitaxial TiO2 II on c-sapphire. Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 31 (1), 01A118-1−01A118-5.10.1116/1.4764892.
5.2.
2012
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; and Rosental, Arnold (2012). Atomic layer deposition of TiO2 II on α-Al2O3(001). Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 240.
1.1.
2010
Sammelselg, V.; Tarre, A.; Lu, J.; Aarik, J.; Niilisk, A.; Uustare, T.; Netšipailo, I.; Rammula, R.; Pärna, R.; Rosental, A. (2010). Structural characterization of TiO2–Cr2O3 nanolaminates grown by atomic layer deposition. Surface and Coatings Technology, 204, 2015−2018. DOI: 10.1016/j.surfcoat.2009.11.039.
5.2.
2010
Tarre, A.; Aidla, A.; Mändar, H.; Asari, J.; Uustare, T.; Rosental, A. (2010). Iodide/ozone system in aomic layer deposition of tin dioxide. Conference Program & Abstracts Booklet: Baltic ALD 2010 & GerALD 2; Hamburg, Germany; Sept. 16-17, 2010.
1.1.
2009
Kasikov, A.; Gerst, A.; Kikas, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2009). Pt coated Cr2O3 thin films for gas sensors. Central European Journal of Physics, 7 (2), 356−362. DOI: 10.2478/s11534-009-0049-1.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Tarre, A.; Rosental, A.; Gerst, A.; Uustare, T.; Ottosson, M.; Lu, J. (2009). GAS-SENSITIVE NANOLAYERED SINGLE-CRYSTALLINE SnO2. Book of abstracts: 9th Baltic Conference on Atomic Layer Deposition (BALD 2009); The Ångström Laboratory, Uppsala University, Sweden; June 15-16, 2009. _EditorsAbbr Prof. Anders Hårsta. Uppsala University, Uppsala, Sweden, P22.
1.1.
2008
Tarre, A.; Aarik, J.; Mändar, H.; Niilisk, A.; Pärna, R.; Rammula, R.; Uustare, T.; Rosental, A.; Sammelselg, V. (2008). Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254 (16), 5149−5156. DOI: 10.1016/j.apsusc.2008.02.016.
1.1.
2008
Sarapuu, A.; Nurmik, M.; Mändar, H.; Rosental, A.; Laaksonen, T.; Kontturi, K.; Schiffrin, D. J.; Tammeveski, K. (2008). Electrochemical reduction of oxygen on nanostructured gold electrodes. Journal of Electroanalytical Chemistry, 612 (1), 78−86.
5.2.
2008
Kasikov, A.; Gerst, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2008). Sensitizing Cr2O3 thin films for resistive gas sensors by Pt coating. 6th solid state surfaces and interfaces. November 24-27, 2008 Smolenice Castle, Slovak Republic. Extended abstract book.: 6th solid state surfaces and interfaces. Smolenice, Slovakkia, 24.-27. november 2008. Ed. Brunner, R. Bratislava: Comenius University, 26−29.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
1.1.
2007
Mändar, H.; Uustare, T.; Aarik, J.; Tarre, A.; Rosental, A. (2007). Characterization of asymmetric rhombohedra twin in epitaxial a-Cr2O3 thin films by X-ray and electron diffraction. Thin Solid Films, 515 (11), 4570−4579. DOI: 10.1016/j.tsf.2006.11.037.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
5.2.
2007
Sarapuu, A.; Nurmik, M.; Mändar, H.; Rosental, A.; Laaksonen, T.; Kontturi, K.; Tammeveski, K. (2007). Hapniku redutseerimine nanostruktuursetel kuldelektroodidel. XXX Eesti keemiapäevad. Teaduskonverentsi teesid: Tartu; 16. november 2007. Toim. Rinken, A. Tartu: Tartu Ülikooli Kirjastus, 143−144.
5.2.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Rosental, A. (2007). Electrical behavior and gas response of epitaxial SnO2 and Cr2O3 films: a comparative study. Proc. 41st Annual Conf. of the Finnish Physical Society. Toim. Vainio, R.; Pomoell, J.; Louhivuori, M. Helsinki: University of Helsinki, 114.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Pärna, R.; Tarre, A.; Rosental, A.; Aarik, J. (2007). Raman characterization of strain in epitaxial Cr2O3 films on sapphire. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 100−100.
3.2.
2006
Rosental, A.; Aarik, J.; Kukli, K. (2006). Aatomkihtsadestamine - arenguvõimalus tehnoloogiale, väljakutse füüsikale. Koppel, I.; Saari, P. (Toim.). Teadusmõte Eestis. Täppisteadused (81−87).. Tallinn: Eesti Teaduste Akadeemia.
5.2.
2006
Tarre, Aivar; Aarik, Jaan; Rosental, Arnold; Uustare, Teet; Lu, Jun; Ottosson, Mikael (2006). Effect of TiO2/SnO2 succession on atomic ordering in ALD grown heterostructures based on α-Al2O3(0 1 -1 2). Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. _EditorsAbbr Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P10.
5.2.
2006
Niilisk, Ahti; Tarre, Aivar; Pärna, Rainer; Pärs, Martti; Mändar, Hugo; Uustare, Teet; Rosental, Arnold; Aarik, Jaan (2006). Characterization of strain in epitaxial Cr2O3 films grown on α-Al2O3 substrates. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P13.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Niilisk, Ahti; Rosental, Arnold; Uustare, Teet; Sammelselg, Väino (2006). Cr2O3-TiO2 nano-multilayering by high-temperature ALD. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P9.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
3.1.
2005
Tarre, A.; Rosental, A.; Uustare, T.; Kasikov, A. (2005). SnO2 on Sapphire. In: Rosental, A. (Ed.). Optical Materials and Applications (1−10). . SPIE. (Proceedings of SPIE).
3.2.
2005
Rosental, A. (2005). Nanotehnoloogia. Eesti Teadusfondi aastaraamat 2004 (13−14).. Sihtasutus Eesti Teadusfond.
6.7.
2005
Rosental, A. (2005). Introduction. Optical Materials and Applications, Proceedings of SPIE (xii).. SPIE.
1.1.
2004
Lu, J.; Sundqvist, J.; Ottosson, M.; Tarre, A.; Rosental, A.; Aarik, J.; Harsta, A. (2004). Microstructure characterisation of ALD-grown epitaxial SnO2 thin films. Journal of Crystal Growth, 260, 191−200.
5.2.
2004
Tarre, A.; Harjuoja, J.; Aidla, A.; Uustare, T.; Aarik, J.; Rosental, A.; Niinistö, L. (2004). Comparision of atomic layer deposition of SnO2 from SnI4 and O2 on different substrates. Abstract Book: The American Vacuum Society ALD (AVS-ALD) and Baltic ALD (BALD) conference (ALD 2004); University of Helsinki, Finland; 16-18 August, 2004. Helsinki: Helsinki University, P83.
1.1.
2003
Sundqvist, J.; Tarre, A.; Rosental, A.; Harsta, A. (2003). Atomic layer deposition of epitaxial and polycrystalline SnO2 films from the SnI4/O-2 precursor combination. Chemical Vapor Deposition, 9 (1), 21−25.
1.1.
2003
Tarre, A.; Rosental, A.; Sundqvist, J.; Harsta, A.; Uustare, T.; Sammelselg, V. (2003). Nanoepitaxy of SnO2 on alpha-Al2O3(012). Surface Science, 532, 514−518.
1.1.
2003
Rosenthal, A.; Tarre, A.; Gerst, A.; Sundqvist, J.; Harsta, A.; Aidla, A.; Aarik, J.; Sammelselg, V.; Uustare, T. (2003). Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition. Sensors and Actuators B Chemical, 93, 552−555.
1.2.
2003
Niilisk, A; Rosental, A; Tarre, A; Uustare, T (2003). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2-H2O. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 257−265.
3.1.
2003
Babonas, G.; Niilisk, A.; Reza, A.; Matulis, A.; Rosental, A. (2003). Spectroscopic ellipsometry of TiO2/Si. Advanced Organic and inorganic Optical Materials. Proceedings of SPIE (50−55).. SPIE.
6.7.
2003
Rosental, A. [Guest Editor] (2003). Preface. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 243−244.
1.1.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Sundqvist, J.; Harsta, A. (2002). New routes to SnO2 heteroepitaxy. Vacuum, 67, 571−575.
5.2.
2002
Õunamaa, K.; Tarre, A.; Rosental, A. (2002). Incremental dielectric reflection in atomic layer deposition diagnostics. In: A. Rosental (_EditorsAbbr). Abstracts (37).The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-%), Tartu, Estonia, Oct. 24-26, 2002. Tartu: Tartu University Press.
5.2.
2002
Rosental, A. (2002). Atomic layer deposited ultrathin amorphous and epitaxial SnO2 films appropriate for gas sensors. In: A. Rosental (_EditorsAbbr). Abstracts (27).The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-%), Tartu, Estonia, Oct. 24-26, 2002. Tartu: Tartu University Press.
5.2.
2002
Niilisk, A.; Rosental, A.; Tarre, A.; Uustare, t., Sammelselg, V. (2002). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2. Abstracts: 5th Baltic Symposium on Atomic Layer Deposition (BALD-5): The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, Oct. 24-26, 2002. _EditorsAbbr A. Rosental. Tartu: Tartu University Press, 24.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V. (2002). Atomic layer deposition of SnO2 on alfa-Al2O3 (0 1 2) from SnCl4 and H2O2 precursors. Abstract Book: The 4th Nordic-Baltic SPM Workshop; Institute of Physics, University of Tartu, Tartu, Estonia; 29-31 May, 2002. Ed. Kink, I. Tartu: Tartu Ülikooli füüsika instituut, 70−71.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V.; Gerst, A. (2002). Atomic layer SnCl4-H2O2 growth of SnO2 on r-cut sapphire substrates. Abstracts: The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, October 24-26, 2002. Ed. Rosental, A. Tartu: Tartu University Press, 23.
1.1.
2001
Niilisk, A.; Rosental, A.; Uustare, T.; Kasikov, A.; Tarre, A. (2001). Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates. Journal de Physique IV, 11, 103−107.
1.1.
2001
Tarre, A.; Rosental, A.; Sammelselg, V.; Uustare, T. (2001). Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2. Applied Surface Science, 175, 111−116.
1.1.
2001
Rosental, A.; Tarre, A.; Gerst, A.; Uustare, T.; Sammelselg, V. (2001). Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications. Sensors and Actuators B Chemical, 77, 297−300.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
5.2.
2001
Niilisk, A.; Rosental, A.; Mändar, H. (2001). Novel approach to low temperature atomic layer controlled growth of oxides. Book of Abstracts – 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering (MSU-HTSC VI: 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering, Moscow - St.Petersburg,June 24-30, 2001. Ed. Shpanchenko, R.V. Department of Chemistry, Moscow State University: Moscow State University, PIII-3.
3.2.
2000
Rosental, A.; Tarre, A. (2000). Nobeli füüsikapreemia 1998. Eesti Füüsika Seltsi Aastaraamat 1999 (49−57).. Tartu: Eesti Füüsika Selts.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1999
Tammeveski, K.; Tenno, T.; Rosental, A.; Johansson, LS.; Niinisto, L. (1999). The reduction of oxygen on Pt-TiO2 coated Ti electrodes in alkaline solution. Journal of The Electrochemical Society, 146 (2), 669−676.
1.1.
1998
Sammelselg, V.; Rosental, A.; Tarre, A.; Niinisto, L.; Heiskanen, K.; Ilmonen, K.; Johansson, LS.; Uustare, T. (1998). TiO2 thin films by atomic layer deposition: a case of uneven growth at low temperature. Applied Surface Science, 134, 78−86.
1.1.
1997
Rosental, A.; Adamson, P.; Gerst, A.; Koppel, H.; Tarre, A. (1997). Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection. Applied Surface Science, 112, 82−86.
3.1.
1997
Rosental, A.; Tarre, A.; Gerst, A.; Adamson, P.; Sammelselg, V.; Uustare, T. (1997). Atomic-layer-deposited TiO2 dielectric coatings. Optical Inorganic Dielectric Materials and Devices, 2967: International Conference on Advanced Optical Materials and Devices (AOMD 96) - Optical Inorganic Dielectric Materials and Devices; Riga, Latvia; 26-29 August, 1996. Ed. Krumins, A.; Millers, D.K.; Sternberg, A.; Spigulis, J. SPIE, 245−250. (Proceedings of SPIE).
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
3.2.
1995
Rosental, A. (1995). Optiline in situ sond (epitakasiaal) sadestamisel. Eesti Füüsika Seltsi aastaraamat 1994 (63−77).. Eesti Füüsika Selts.
5.2.
1995
Ney, P.; Rosental, A.; Aarik, J.; Aidla, A. (1995). Modification of the CO Sensitivity of Atomic Layer Deposited TiO2 Thin Films by Growth Conditions. Programme and Abstracts: 3rd Baltic ALE Symposium, November 23-24, 1995, Helsinki. 32.
1.1.
1994
Rosental, A.; Niilisk, A. (1994). Optical in-situ characterization of deposit formation under alternate supply of diethylzinc and CO2 at room-temperature. Surface Science, 309, 1188−1192.
3.2.
1991
Rosental, A. (1991). Heteroepitaksia probleeme. Eesti Füüsika Seltsi aastaraamat 1991 (96−102).. Eesti Füüsika Selts.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
3.2.
1987
Stern, R.; Rosental, A. (1987). Setup for measuring the astigmatism of diode lasers. Полупроводники и гетеропереходы (74−76).. Valgus.
6.3.
1987
Rosental, A.; Ots, I. (1987). Nobeli füüsikapreemia. Füüsika 1985 (3).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.2.
1984
Aarik, J.; Bergmann, J.; Virro, A.; Lõuk, P.; Rosental, A.; Sammelselg, V.; Friedenthal, J. (1984). Room temperature continuous wave operation of AlGaAsSb/GaSb heterostructure lasers. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 128−130.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
1.1.
1979
Rosental, A.; Itaya, Y.; Suematsu, Y. (1979). Measurement of Zn doping level in InGaAsP/InP DH lasers. Japanese Journal of Applied Physics, 18 (8), 1655−1656.
3.2.
1978
Adamson, P.; Rosental, A.; Fedoseev, V. (1978). The influence of mirror-reflecting of spontaneous radiation from metal contacts upon the heterolaser threshold current. A model of direct optical transitions. Tartu Riikliku Ülikooli Toimetised (97−102).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1978
Aarik, J.; Koppel, H.; Kütt, J.; Rosental, A.; Friedenthal, J. (1978). Band gap probing of AQlxGa1-xAs double heterojunction laser structures using light-beam technique. Tartu Riikliku Ülikooli Toimetised (86−91).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
1.1.
1974
Rosental, A.; Sapar, A. (1974). Diffusion effects in one-carrier space-charge-limited currents with trapping. Journal of Applied Physics, 45 (6), 2787−2788.
3.4.
1974
Rosental, A.; Kalda, A. (1974). Theory of space charge limited currents with Richardson-Schottky and Poole-Frenkel effects taken into account. Problemy dielectricheskoi elektroniki. Tashkent: Fan, 263−269.
3.5.
1974
Rosental, A. (1974). Transient space charge limited current in an insulator with traps. Problemy dielektricheskoi elektroniki. Tashkent: Fan, 270−276.
1.1.
1973
Rosental, A. (1973). Time-dependence of space-charge conduction. Physics Letters A, A 46 (4), 270−272.
1.2.
1973
Sapar, A.; Rosental, A. (1973). A general method for computing one-carrier injection and extraction current-voltage characteristics in solids. Eesti NSV Teaduste Akadeemia toimetised. Füüsika. Matemaatika, 22, 276−285.
3.2.
1973
Rosental, A. (1973). Токи монополярной и двойной инжекции. Библиография за период 1968 г. – середина 1971 г. Ламперт, М.; Марк, П.. Инжекционные токи в твердых телах (381−407).. Mir.
6.7.
1973
Rosental, A. (tlk.) (1973). Ламперт, М.; Марк, П. Инжекционные токи в твердых телах. (Lampert, M.; Mark, P. Current Injection in Solids, Academic Press, N.Y., 1970.). M.: Mir.
1.1.
1972
Rosental, AI.; Paritski, LG. (1972). Space-charge-limited current in a high-resistivity semiconductor at low voltages. Soviet Physics: Semiconductors, 5 (12), 2100.
1.1.
1972
Rosental, A.; Kalda, A. (1972). Third side of lampert triangle in fitting experimental-data. Physical Review B, 6 (10), 4077.
1.1.
1972
Rosental, AI.; Vainu, TL. (1972). Use of space-charge-limited current in measurements of microscopic mobility in cds single-crystals. Soviet Physics: Semiconductors, 5 (8), 1334.
3.2.
1972
Loog, P.K.; Rosental, A.I. (1972). Analog simulation of one-carrier injection in insulators. Eesti NSV Teaduste Akadeemia Füüsika ja Astronoomia Instituudi Uurimused (196−212).. Eesti NSV Teaduste Akadeemia.
3.4.
1972
Rosental, A.; Sapar, A. (1972). Conditions permitting observation of trap-free square law of space charge limited current in cadmium sulfide. Проблемы физики соединений AIIBVI, II. Vilnius: Vilnius State University, 368−372.
1.1.
1970
Rosental, A.; Lember, L. (1970). Current transients in insulator determined by space charge and diffusion. Physica Status Solidi, 39 (1), 19.
1.1.
1970
Paritski, GL.; Rosental, AI. (1970). Effect of an inhomogeneous volume distribution of trapping centers on unipolar injection in semiconductors. Soviet Physics: Semiconductors, 4 (3), 446.
1.1.
1970
Rosental, AI.; Paritski, LG. (1970). Special features of space-charge-limited current in case of 2 types of trapping level. Soviet Physics: Semiconductors, 4 (2), 327.
6.2.
1970
Rosental, A. (1970). Heterojunction. Совершенствование преподавания физики в вузе. В помощь преподавателю (27−34).. Tartu: Tartu Riiklik Ülikool.
1.1.
1969
Rosental, A. (1969). Comments on unipolar interface-charge-limited current by M.-A. Nicolet, V. Rodriguez and D. Stolfa. Surface Science, 15 (3), 555−556.
1.1.
1968
Paritski, LG.; Rosental, AI. (1968). Some properties of photocurrent in cds under unipolar injection conditions. Soviet Physics: Semiconductors, 2 (6), 752.
1.1.
1968
Dokholyan, Z.G.; Zibuts, Y.A.; Paritski, L.G.; Rosental, A.I. (1968). Properties of electrically induced photoeffect in cds. Soviet Physics: Semiconductors, 2 (1), 118.
1.3.
1968
Dokholyan, Z.G.; Paritskii, L.G.; Rozental, A.I. (1968). Investigation of intrinsic photoconductivity under unipolar injection conditions. Soviet Physics: Semiconductors, 2 (6), 749.
1.1.
1967
Paritski, LG.; Rosental, AI. (1967). Influence of charge exchange in impurity centers on space-charge-limited current. Soviet Physics: Semiconductors, 1 (2), 210.
24.08.2021

Arnold Rosental

https://www.etis.ee/CV/Arnold_Rosental/eng
29.08.1937
20.03.2014

Career

Institutions and positions
01.01.1961–...   
IoP: 1962-4 Jun. Sci., 1964-7 PhD Stud., 1967-75 Jun. Sci., 1975-86 Sen. Sci., 1986-90 Lead. Sci., 1990-92 Sen. Sci., 1992-2002 Gr. Hd., 2003-… Sen. Sci.; UT: 1976-82 Sen. Lect., 1982-95 Assoc. Prof.
01.01.2008–31.12.2009   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,40)
01.01.2007–31.12.2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,50)
01.01.2006–31.12.2006   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (0,70)
2005–2005   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, erakorraline vanemteadur (0,50)
01.01.2005–31.12.2008   
Estonian Nanotechnology Competence Center: Project Manager
2003–2004   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, erakorraline vanemteadur (0,50)
 
 
Education
1956–1961   
Tartu State University (1961)
 
 
R&D related managerial and administrative work
1980−...   
1992-2002 IoP Gr. Hd., 1989-2007 IoP Sci. Counc., 1980-9 Progr. Sci. Secr., 1997-8 Innov. Found. Proj. Mngr., 2000-3 EU Excel. Cntr. Proj. Mngr., 2002-6 Target. Theme Mngr., 2004-6 Sci. Compet. Counc., 2005-8 Nanocntr. Proj. Mngr., organized 9 conf.

Qualifications

Academic degrees
Arnold Rosental, Doctor's Degree, 1974, (sup) , Некоторые особенности тока, ограниченного объемным зарядом, в твердом теле (Some aspects of space charge limited currents in solids), University of Tartu.
 
 
Honours & awards
1982, Arnold Rosental, State Award of the Estonian SSR
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.10. Physics and Technical Physics; SPECIFICATION: Majority carrier injectionin semiconductors, semiconductor lasers, atomic layer deposition of oxides, optical real-time monitoring of atomic layer growth, semiconductor gas sensors
 
 

Completed projects

Dissertations under supervision

Supervised dissertations

Publications

Category
Year
Publication
 
1.1.
2013
Rosental, Arnold; Tarre, Aivar; Gerst, Alar; Kasikov, Aarne; Lu, Jun; Ottosson, Mikael; Uustare, Teet (2013). Epitaxial single and double nanolayers of SnO2 and TiO2 for resistive gas sensors. IEEE Sensors Journal, 13 (5), 1648−1655.10.1109/JSEN.2013.2238227.
1.1.
2013
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; Rosental, Arnold (2013). Atomic layer deposition of epitaxial TiO2 II on c-sapphire. Journal of Vacuum Science & Technology A: Vacuum Surfaces and Films, 31 (1), 01A118-1−01A118-5.10.1116/1.4764892.
5.2.
2012
Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; and Rosental, Arnold (2012). Atomic layer deposition of TiO2 II on α-Al2O3(001). Book of Abstracts: The 12th International Conference on Atomic Layer Deposition "AVS-ALD & Baltic ALD 2012", Dresden, Germany, June 17-20, 2012. Ed. Uwe Schröder and Mato Knez. Namlab gGmbH, Dresden, 240.
1.1.
2010
Sammelselg, V.; Tarre, A.; Lu, J.; Aarik, J.; Niilisk, A.; Uustare, T.; Netšipailo, I.; Rammula, R.; Pärna, R.; Rosental, A. (2010). Structural characterization of TiO2–Cr2O3 nanolaminates grown by atomic layer deposition. Surface and Coatings Technology, 204, 2015−2018. DOI: 10.1016/j.surfcoat.2009.11.039.
5.2.
2010
Tarre, A.; Aidla, A.; Mändar, H.; Asari, J.; Uustare, T.; Rosental, A. (2010). Iodide/ozone system in aomic layer deposition of tin dioxide. Conference Program & Abstracts Booklet: Baltic ALD 2010 & GerALD 2; Hamburg, Germany; Sept. 16-17, 2010.
1.1.
2009
Kasikov, A.; Gerst, A.; Kikas, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2009). Pt coated Cr2O3 thin films for gas sensors. Central European Journal of Physics, 7 (2), 356−362. DOI: 10.2478/s11534-009-0049-1.
3.1.
2009
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2009). C-plane chromia on c-plane sapphire. physica status solidi (c), 6 (6), 1472−1475. DOI: 10.1002/pssc.200881530.
5.2.
2009
Tarre, A.; Rosental, A.; Gerst, A.; Uustare, T.; Ottosson, M.; Lu, J. (2009). GAS-SENSITIVE NANOLAYERED SINGLE-CRYSTALLINE SnO2. Book of abstracts: 9th Baltic Conference on Atomic Layer Deposition (BALD 2009); The Ångström Laboratory, Uppsala University, Sweden; June 15-16, 2009. _EditorsAbbr Prof. Anders Hårsta. Uppsala University, Uppsala, Sweden, P22.
1.1.
2008
Tarre, A.; Aarik, J.; Mändar, H.; Niilisk, A.; Pärna, R.; Rammula, R.; Uustare, T.; Rosental, A.; Sammelselg, V. (2008). Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254 (16), 5149−5156. DOI: 10.1016/j.apsusc.2008.02.016.
1.1.
2008
Sarapuu, A.; Nurmik, M.; Mändar, H.; Rosental, A.; Laaksonen, T.; Kontturi, K.; Schiffrin, D. J.; Tammeveski, K. (2008). Electrochemical reduction of oxygen on nanostructured gold electrodes. Journal of Electroanalytical Chemistry, 612 (1), 78−86.
5.2.
2008
Kasikov, A.; Gerst, A.; Matisen, L.; Saar, A.; Tarre, A.; Rosental, A. (2008). Sensitizing Cr2O3 thin films for resistive gas sensors by Pt coating. 6th solid state surfaces and interfaces. November 24-27, 2008 Smolenice Castle, Slovak Republic. Extended abstract book.: 6th solid state surfaces and interfaces. Smolenice, Slovakkia, 24.-27. november 2008. Ed. Brunner, R. Bratislava: Comenius University, 26−29.
5.2.
2008
Tarre, A.; Carlotti, G.; Gerst, A.; Mändar, H.; Niilisk, A.; Sammelselg, V.; Socino, G.; Rosental, A. (2008). C-plane chromia on c-plane sapphire. Program and Abstracts of "The 35th International Symposium on Compound Semiconductors": The 35th International Symposium on Compound Semiconductors (ISCS2008); Europa-Park, Rust, Germany; 21 - 24 September 2008. Ed. Ambacher, O. Fraunhofer Institute for Applied Solid State Physics, P42.
1.1.
2007
Mändar, H.; Uustare, T.; Aarik, J.; Tarre, A.; Rosental, A. (2007). Characterization of asymmetric rhombohedra twin in epitaxial a-Cr2O3 thin films by X-ray and electron diffraction. Thin Solid Films, 515 (11), 4570−4579. DOI: 10.1016/j.tsf.2006.11.037.
3.1.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Mändar, H.; Niilisk, A.; Uustare, T.; Rosental, A.; Sammelselg, V. (2007). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. In: Ashmontas, S.; Gradauskas, J. (Ed.). Advanced Optical Materials, Technologies, and Devices (659618-1−659618-11). . SPIE. (Proceedings of SPIE; 6596).
5.2.
2007
Sarapuu, A.; Nurmik, M.; Mändar, H.; Rosental, A.; Laaksonen, T.; Kontturi, K.; Tammeveski, K. (2007). Hapniku redutseerimine nanostruktuursetel kuldelektroodidel [Oxygen reduction on nanostructured gold electrodes]. XXX Eesti keemiapäevad. Teaduskonverentsi teesid: Tartu; 16. november 2007. Toim. Rinken, A. Tartu: Tartu Ülikooli Kirjastus, 143−144.
5.2.
2007
Pärna, R.; Tarre, A.; Gerst, A.; Rosental, A. (2007). Electrical behavior and gas response of epitaxial SnO2 and Cr2O3 films: a comparative study. Proc. 41st Annual Conf. of the Finnish Physical Society. Toim. Vainio, R.; Pomoell, J.; Louhivuori, M. Helsinki: University of Helsinki, 114.
5.2.
2007
Tarre, A.; Pärna, R.; Gerst, A.; Niilisk, A.; Uustare, T.; Rosental, A. (2007). ALD of Cr2O3 on alumina. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 102.
5.2.
2007
Niilisk, A.; Pärs, M.; Sildos, I.; Pärna, R.; Tarre, A.; Rosental, A.; Aarik, J. (2007). Raman characterization of strain in epitaxial Cr2O3 films on sapphire. Book of Abstracts: E-MRS 2007 Fall Meeting: The European Materials Research Society Fall Meeting 2007; Warsaw University of Technology, Warsaw, Poland; 17-21 September 2007. Poola: Conference Engine © pielaszek research, 100−100.
3.2.
2006
Rosental, A.; Aarik, J.; Kukli, K. (2006). Aatomkihtsadestamine - arenguvõimalus tehnoloogiale, väljakutse füüsikale. Koppel, I.; Saari, P. (Toim.). Teadusmõte Eestis. Täppisteadused (81−87).. Tallinn: Eesti Teaduste Akadeemia.
5.2.
2006
Tarre, Aivar; Aarik, Jaan; Rosental, Arnold; Uustare, Teet; Lu, Jun; Ottosson, Mikael (2006). Effect of TiO2/SnO2 succession on atomic ordering in ALD grown heterostructures based on α-Al2O3(0 1 -1 2). Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. _EditorsAbbr Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P10.
5.2.
2006
Niilisk, Ahti; Tarre, Aivar; Pärna, Rainer; Pärs, Martti; Mändar, Hugo; Uustare, Teet; Rosental, Arnold; Aarik, Jaan (2006). Characterization of strain in epitaxial Cr2O3 films grown on α-Al2O3 substrates. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P13.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Niilisk, Ahti; Rosental, Arnold; Uustare, Teet; Sammelselg, Väino (2006). Cr2O3-TiO2 nano-multilayering by high-temperature ALD. Book of Abstracts: Baltic Conference on Atomic Layer Deposition 2006 (BALD 2006); Oslo, Norway; 19-20 June, 2006. Ed. Ola Nilsen. Department of Chemistry, University of Oslo, Norway: University Oslo, P9.
5.2.
2006
Pärna, Rainer; Tarre, Aivar; Gerst, Alar; Mändar, Hugo; Niilisk, Ahti; Uustare, Teet; Rosental, Arnold; Sammelselg, Väino (2006). Influence of annealing on atomic layer deposited Cr2O3-TiO2 thin films. Program and Abstracts: 5th International Conference on Advanced Optical Materials and Devices (AOMD-5); Vilnius, Lithuania; 27-30 August, 2006. Ed. Steponas Ašmontas. Vilnius: Semiconductor Physics Institute, Lithuania, 44.
3.1.
2005
Tarre, A.; Rosental, A.; Uustare, T.; Kasikov, A. (2005). SnO2 on Sapphire. In: Rosental, A. (Ed.). Optical Materials and Applications (1−10). . SPIE. (Proceedings of SPIE).
3.2.
2005
Rosental, A. (2005). Nanotehnoloogia. Eesti Teadusfondi aastaraamat 2004 (13−14).. Sihtasutus Eesti Teadusfond.
6.7.
2005
Rosental, A. (2005). Introduction. Optical Materials and Applications, Proceedings of SPIE (xii).. SPIE.
1.1.
2004
Lu, J.; Sundqvist, J.; Ottosson, M.; Tarre, A.; Rosental, A.; Aarik, J.; Harsta, A. (2004). Microstructure characterisation of ALD-grown epitaxial SnO2 thin films. Journal of Crystal Growth, 260, 191−200.
5.2.
2004
Tarre, A.; Harjuoja, J.; Aidla, A.; Uustare, T.; Aarik, J.; Rosental, A.; Niinistö, L. (2004). Comparision of atomic layer deposition of SnO2 from SnI4 and O2 on different substrates. Abstract Book: The American Vacuum Society ALD (AVS-ALD) and Baltic ALD (BALD) conference (ALD 2004); University of Helsinki, Finland; 16-18 August, 2004. Helsinki: Helsinki University, P83.
1.1.
2003
Sundqvist, J.; Tarre, A.; Rosental, A.; Harsta, A. (2003). Atomic layer deposition of epitaxial and polycrystalline SnO2 films from the SnI4/O-2 precursor combination. Chemical Vapor Deposition, 9 (1), 21−25.
1.1.
2003
Tarre, A.; Rosental, A.; Sundqvist, J.; Harsta, A.; Uustare, T.; Sammelselg, V. (2003). Nanoepitaxy of SnO2 on alpha-Al2O3(012). Surface Science, 532, 514−518.
1.1.
2003
Rosenthal, A.; Tarre, A.; Gerst, A.; Sundqvist, J.; Harsta, A.; Aidla, A.; Aarik, J.; Sammelselg, V.; Uustare, T. (2003). Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition. Sensors and Actuators B Chemical, 93, 552−555.
1.2.
2003
Niilisk, A; Rosental, A; Tarre, A; Uustare, T (2003). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2-H2O. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 257−265.
3.1.
2003
Babonas, G.; Niilisk, A.; Reza, A.; Matulis, A.; Rosental, A. (2003). Spectroscopic ellipsometry of TiO2/Si. Advanced Organic and inorganic Optical Materials. Proceedings of SPIE (50−55).. SPIE.
6.7.
2003
Rosental, A. [Guest Editor] (2003). Preface. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52 (3), 243−244.
1.1.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Sundqvist, J.; Harsta, A. (2002). New routes to SnO2 heteroepitaxy. Vacuum, 67, 571−575.
5.2.
2002
Õunamaa, K.; Tarre, A.; Rosental, A. (2002). Incremental dielectric reflection in atomic layer deposition diagnostics. In: A. Rosental (_EditorsAbbr). Abstracts (37).The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-%), Tartu, Estonia, Oct. 24-26, 2002. Tartu: Tartu University Press.
5.2.
2002
Rosental, A. (2002). Atomic layer deposited ultrathin amorphous and epitaxial SnO2 films appropriate for gas sensors. In: A. Rosental (_EditorsAbbr). Abstracts (27).The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-%), Tartu, Estonia, Oct. 24-26, 2002. Tartu: Tartu University Press.
5.2.
2002
Niilisk, A.; Rosental, A.; Tarre, A.; Uustare, t., Sammelselg, V. (2002). High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2. Abstracts: 5th Baltic Symposium on Atomic Layer Deposition (BALD-5): The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, Oct. 24-26, 2002. _EditorsAbbr A. Rosental. Tartu: Tartu University Press, 24.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V. (2002). Atomic layer deposition of SnO2 on alfa-Al2O3 (0 1 2) from SnCl4 and H2O2 precursors. Abstract Book: The 4th Nordic-Baltic SPM Workshop; Institute of Physics, University of Tartu, Tartu, Estonia; 29-31 May, 2002. Ed. Kink, I. Tartu: Tartu Ülikooli füüsika instituut, 70−71.
5.2.
2002
Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Uustare, T.; Sammelselg, V.; Gerst, A. (2002). Atomic layer SnCl4-H2O2 growth of SnO2 on r-cut sapphire substrates. Abstracts: The Fifth Baltic Symposium on Atomic Layer Deposition (BALD-5), Tartu, Estonia, October 24-26, 2002. Ed. Rosental, A. Tartu: Tartu University Press, 23.
1.1.
2001
Niilisk, A.; Rosental, A.; Uustare, T.; Kasikov, A.; Tarre, A. (2001). Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates. Journal de Physique IV, 11, 103−107.
1.1.
2001
Tarre, A.; Rosental, A.; Sammelselg, V.; Uustare, T. (2001). Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2. Applied Surface Science, 175, 111−116.
1.1.
2001
Rosental, A.; Tarre, A.; Gerst, A.; Uustare, T.; Sammelselg, V. (2001). Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications. Sensors and Actuators B Chemical, 77, 297−300.
3.1.
2001
Niilisk, A.; Rosental, A.; Gerst, A.; Sammelselg, V.; Uustare, T. (2001). Atomic-scale optical monitoring of the inital growth of TiO2 thin films. Smart Optical Inorganic Structures and Devices. Proceedings of SPIE (63−68). . SPIE.
5.2.
2001
Niilisk, A.; Rosental, A.; Mändar, H. (2001). Novel approach to low temperature atomic layer controlled growth of oxides. Book of Abstracts – 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering (MSU-HTSC VI: 6th International Workshop on High-temperature Superconductors and Novel Inorganic Materials Engineering, Moscow - St.Petersburg,June 24-30, 2001. Ed. Shpanchenko, R.V. Department of Chemistry, Moscow State University: Moscow State University, PIII-3.
3.2.
2000
Rosental, A.; Tarre, A. (2000). Nobeli füüsikapreemia 1998. Eesti Füüsika Seltsi Aastaraamat 1999 (49−57).. Tartu: Eesti Füüsika Selts.
1.1.
1999
Rosental, A.; Tarre, A.; Adamson, P.; Gerst, A.; Kasikov, A.; Niilisk, A. (1999). Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection. Applied Surface Science, 142, 204−209.
1.1.
1999
Tammeveski, K.; Tenno, T.; Rosental, A.; Johansson, LS.; Niinisto, L. (1999). The reduction of oxygen on Pt-TiO2 coated Ti electrodes in alkaline solution. Journal of The Electrochemical Society, 146 (2), 669−676.
1.1.
1998
Sammelselg, V.; Rosental, A.; Tarre, A.; Niinisto, L.; Heiskanen, K.; Ilmonen, K.; Johansson, LS.; Uustare, T. (1998). TiO2 thin films by atomic layer deposition: a case of uneven growth at low temperature. Applied Surface Science, 134, 78−86.
1.1.
1997
Rosental, A.; Adamson, P.; Gerst, A.; Koppel, H.; Tarre, A. (1997). Atomic layer deposition in traveling-wave reactor: In situ diagnostics by optical reflection. Applied Surface Science, 112, 82−86.
3.1.
1997
Rosental, A.; Tarre, A.; Gerst, A.; Adamson, P.; Sammelselg, V.; Uustare, T. (1997). Atomic-layer-deposited TiO2 dielectric coatings. Optical Inorganic Dielectric Materials and Devices, 2967: International Conference on Advanced Optical Materials and Devices (AOMD 96) - Optical Inorganic Dielectric Materials and Devices; Riga, Latvia; 26-29 August, 1996. Ed. Krumins, A.; Millers, D.K.; Sternberg, A.; Spigulis, J. SPIE, 245−250. (Proceedings of SPIE).
1.1.
1996
Rosental, A.; Adamson, P.; Gerst, A.; Niilisk, A. (1996). Monitoring of atomic layer deposition by incremental dielectric reflection. Applied Surface Science, 107, 178−183.
3.2.
1995
Rosental, A. (1995). Optiline in situ sond (epitakasiaal) sadestamisel. Eesti Füüsika Seltsi aastaraamat 1994 (63−77).. Eesti Füüsika Selts.
5.2.
1995
Ney, P.; Rosental, A.; Aarik, J.; Aidla, A. (1995). Modification of the CO Sensitivity of Atomic Layer Deposited TiO2 Thin Films by Growth Conditions. Programme and Abstracts: 3rd Baltic ALE Symposium, November 23-24, 1995, Helsinki. 32.
1.1.
1994
Rosental, A.; Niilisk, A. (1994). Optical in-situ characterization of deposit formation under alternate supply of diethylzinc and CO2 at room-temperature. Surface Science, 309, 1188−1192.
3.2.
1991
Rosental, A. (1991). Heteroepitaksia probleeme. Eesti Füüsika Seltsi aastaraamat 1991 (96−102).. Eesti Füüsika Selts.
1.1.
1990
Virro, A.; Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A. (1990). Active layer assessment of AlxGa1-xAsySb1-y/GaSb diode-lasers from hydrostatic-pressure measurements. Semiconductor Science and Technology, 5 (8), 847−853.
3.1.
1990
Friedenthal, J.; Gerst, A.; Louk, P.; Niilisk, A.; Rosental, A.; Virro, A. (1990). Effect of pressure on the properties of DH diode lasres in AlxGa1-xAsySb1-y/GaSb system. High Pressure Science and Technology. _EditorsAbbr Holzapfel, W.B.; Johannsen, P.G. London: Gordon & Breach, 60−62.
3.4.
1989
Niilisk, A.; Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Rosental, A.; Friedenthal, J. (1989). Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers. High Pressure Science and Technology. Kiev: Naukova Dumka, 304−308.
3.2.
1987
Aarik, J., Virro, A.; Gerst, A., Niilisk, A; Rosental, A. (1987). Luminescence of GaSb at the inversion of Gamma and L minima of the conduction band by hydrostatic pressure. Полупроводники и гетеропереходы (100−102).. Valgus.
3.2.
1987
Virro, A.; Gerst, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1987). Effect of hydrostatic pressure on threshold current of AlGaAsSb lasers. Полупроводники и гетеропереходы (79−81).. Valgus.
3.2.
1987
Stern, R.; Rosental, A. (1987). Setup for measuring the astigmatism of diode lasers. Полупроводники и гетеропереходы (74−76).. Valgus.
6.3.
1987
Rosental, A.; Ots, I. (1987). Nobeli füüsikapreemia. Füüsika 1985 (3).. Valgus.
1.3.
1986
Aarik, J.; Gerst, A.; Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A.; Friedenthal, J. (1986). Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers. Fizika i Tekhnika Vysokih Davlenii, 21, 18−22.
1.2.
1984
Aarik, J.; Bergmann, J.; Virro, A.; Lõuk, P.; Rosental, A.; Sammelselg, V.; Friedenthal, J. (1984). Room temperature continuous wave operation of AlGaAsSb/GaSb heterostructure lasers. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 128−130.
1.2.
1984
Aarik, J.; Virro, A.; Gerst, A.; Lõuk, P.; Niilisk, A.; Rosental, A. (1984). Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure. Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 33 (1), 35−43.
1.1.
1979
Rosental, A.; Itaya, Y.; Suematsu, Y. (1979). Measurement of Zn doping level in InGaAsP/InP DH lasers. Japanese Journal of Applied Physics, 18 (8), 1655−1656.
3.2.
1978
Adamson, P.; Rosental, A.; Fedoseev, V. (1978). The influence of mirror-reflecting of spontaneous radiation from metal contacts upon the heterolaser threshold current. A model of direct optical transitions. Tartu Riikliku Ülikooli Toimetised (97−102).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1978
Aarik, J.; Gerst, A., Laisaar, A.; Lõuk, P.; Mugra, A.; Niilisk, A.; Rosental, A. (1978). Effect of hydrostatic pressure on the threshold characteristics of GaAs-AlxGa1-xAs double heterostructure laser. Tartu Riikliku Ülikooli Toimetised (92−95).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
3.2.
1978
Aarik, J.; Koppel, H.; Kütt, J.; Rosental, A.; Friedenthal, J. (1978). Band gap probing of AQlxGa1-xAs double heterojunction laser structures using light-beam technique. Tartu Riikliku Ülikooli Toimetised (86−91).. Tartu Riiklik Ülikool. (Heterosiirded. Elektroluminestsentsi-alased tööd; VII).
1.1.
1974
Rosental, A.; Sapar, A. (1974). Diffusion effects in one-carrier space-charge-limited currents with trapping. Journal of Applied Physics, 45 (6), 2787−2788.
3.4.
1974
Rosental, A.; Kalda, A. (1974). Theory of space charge limited currents with Richardson-Schottky and Poole-Frenkel effects taken into account. Problemy dielectricheskoi elektroniki. Tashkent: Fan, 263−269.
3.5.
1974
Rosental, A. (1974). Transient space charge limited current in an insulator with traps. Problemy dielektricheskoi elektroniki. Tashkent: Fan, 270−276.
1.1.
1973
Rosental, A. (1973). Time-dependence of space-charge conduction. Physics Letters A, A 46 (4), 270−272.
1.2.
1973
Sapar, A.; Rosental, A. (1973). A general method for computing one-carrier injection and extraction current-voltage characteristics in solids. Eesti NSV Teaduste Akadeemia toimetised. Füüsika. Matemaatika, 22, 276−285.
3.2.
1973
Rosental, A. (1973). Токи монополярной и двойной инжекции. Библиография за период 1968 г. – середина 1971 г. Ламперт, М.; Марк, П.. Инжекционные токи в твердых телах (381−407).. Mir.
6.7.
1973
Rosental, A. (tlk.) (1973). Ламперт, М.; Марк, П. Инжекционные токи в твердых телах. (Lampert, M.; Mark, P. Current Injection in Solids, Academic Press, N.Y., 1970.). M.: Mir.
1.1.
1972
Rosental, AI.; Paritski, LG. (1972). Space-charge-limited current in a high-resistivity semiconductor at low voltages. Soviet Physics: Semiconductors, 5 (12), 2100.
1.1.
1972
Rosental, A.; Kalda, A. (1972). Third side of lampert triangle in fitting experimental-data. Physical Review B, 6 (10), 4077.
1.1.
1972
Rosental, AI.; Vainu, TL. (1972). Use of space-charge-limited current in measurements of microscopic mobility in cds single-crystals. Soviet Physics: Semiconductors, 5 (8), 1334.
3.2.
1972
Loog, P.K.; Rosental, A.I. (1972). Analog simulation of one-carrier injection in insulators. Eesti NSV Teaduste Akadeemia Füüsika ja Astronoomia Instituudi Uurimused (196−212).. Eesti NSV Teaduste Akadeemia.
3.4.
1972
Rosental, A.; Sapar, A. (1972). Conditions permitting observation of trap-free square law of space charge limited current in cadmium sulfide. Проблемы физики соединений AIIBVI, II. Vilnius: Vilnius State University, 368−372.
1.1.
1970
Rosental, A.; Lember, L. (1970). Current transients in insulator determined by space charge and diffusion. Physica Status Solidi, 39 (1), 19.
1.1.
1970
Paritski, GL.; Rosental, AI. (1970). Effect of an inhomogeneous volume distribution of trapping centers on unipolar injection in semiconductors. Soviet Physics: Semiconductors, 4 (3), 446.
1.1.
1970
Rosental, AI.; Paritski, LG. (1970). Special features of space-charge-limited current in case of 2 types of trapping level. Soviet Physics: Semiconductors, 4 (2), 327.
6.2.
1970
Rosental, A. (1970). Heterojunction. Совершенствование преподавания физики в вузе. В помощь преподавателю (27−34).. Tartu: Tartu Riiklik Ülikool.
1.1.
1969
Rosental, A. (1969). Comments on unipolar interface-charge-limited current by M.-A. Nicolet, V. Rodriguez and D. Stolfa. Surface Science, 15 (3), 555−556.
1.1.
1968
Paritski, LG.; Rosental, AI. (1968). Some properties of photocurrent in cds under unipolar injection conditions. Soviet Physics: Semiconductors, 2 (6), 752.
1.1.
1968
Dokholyan, Z.G.; Zibuts, Y.A.; Paritski, L.G.; Rosental, A.I. (1968). Properties of electrically induced photoeffect in cds. Soviet Physics: Semiconductors, 2 (1), 118.
1.3.
1968
Dokholyan, Z.G.; Paritskii, L.G.; Rozental, A.I. (1968). Investigation of intrinsic photoconductivity under unipolar injection conditions. Soviet Physics: Semiconductors, 2 (6), 749.
1.1.
1967
Paritski, LG.; Rosental, AI. (1967). Influence of charge exchange in impurity centers on space-charge-limited current. Soviet Physics: Semiconductors, 1 (2), 210.
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ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
IUTIUT2-24Kilestruktuurid nanoelektroonika rakendusteks ja funktsionaalseteks pinnakateteks01.01.201331.12.2018Väino SammelselgTartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut2 688 000,00 EUR
TKTK117Kõrgtehnoloogilised materjalid jätkusuutlikuks arenguks01.01.201131.12.2015Enn LustTartu Ülikool; Tallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Keemia Instituut2 870 086,58 EUR
SFSF0382149s02Nanostruktuursed materjalid01.01.200231.12.2006Arnold RosentalTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut792 696,19 EUR
ETFETF5831Nanostruktuursete ja keemiliselt modifitseeritud elektroodide elektrokatalüütilised omadused01.01.200431.12.2007Kaido TammeveskiTartu Ülikool, Füüsika-keemiateaduskond25 591,71 EUR
ETFETF5861Pinna- ja siirdekihtide mõju laia keelutsooniga oksiidikilede aatomkihtkasvule ja omadustele01.01.200431.12.2007Arnold RosentalTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut102 754,59 EUR
SFSF0180046s07Pinnanähtused tahkisefüüsikas ja -tehnoloogias01.01.200731.12.2012Väino SammelselgTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut1 590 665,57 EUR
MUUSLOFY12189T (2.1.1101.12-0006)Täiustatud materjalitehnoloogia GaAs-põhiste elektroonika seadiste valmistamiseks01.07.201231.12.2014Jaan AarikTartu Ülikool; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond402 467,50 EUR