See veebileht kasutab küpsiseid kasutaja sessiooni andmete hoidmiseks. Veebilehe kasutamisega nõustute ETISe kasutustingimustega. Loe rohkem
Olen nõus
27.08.1987
37167089445
edvins.dauksta@rtu.lv

Teenistuskäik

Töökohad ja ametid
2009–...   
Rīgas Tehniskā universitāte, Assistent (0,30)
01.01.2009–...   
Riga Technical University, Riga, Latvia
 
 
Haridustee
2009–2012   
Materjaliteadus
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
2009−...   
Scientific assistant,Semiconductor Physics Research Laboratory,Riga Technical Univer
 
 
Loometöö
01.09.2010-01.02.2011 Erasmus exchange studies in Vilnius Univrsity.Vilnius, Lithuania
09.08.2010- 12.08.2010 Inter-Academia 2010,Riga,Latvia.
14.09.2009-17.09.2009. Inter-Academia 2009, Warsaw, Poland..

Kvalifikatsioon

 
 
Teadustöö põhisuunad
VALDKOND: 4. Loodusteadused ja tehnika; 4.12. Protsessitehnoloogia ja materjaliteadus; CERCS ERIALA: T150 Materjalitehnoloogia; PÕHISUUND: Material science and semiconductor materials studied (Si.Ge,ZnO).

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.2.
2011
1.2.
2011
1.2.
2011
1.2.
2011
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
26.06.2018
27.08.1987
37167089445
edvins.dauksta@rtu.lv

Career

Institution and occupation
2009–...   
Riga Technical University, Assistant (0,30)
01.01.2009–...   
Riga Technical University, Riga, Latvia
 
 
Education
2009–2012   
Materials science
 
 
R&D related managerial and administrative work
2009−...   
Scientific assistant,Semiconductor Physics Research Laboratory,Riga Technical University
 
 
Creative work
01.09.2010-01.02.2011 Erasmus exchange studies in Vilnius Univrsity.Vilnius, Lithuania
09.08.2010- 12.08.2010 Inter-Academia 2010,Riga,Latvia.
14.09.2009-17.09.2009. Inter-Academia 2009, Warsaw, Poland..

Qualifications

 
 
Field of research
FIELD OF RESEARCH: 4. Natural Sciences and Engineering; 4.12. Process Technology and Materials Science; CERCS SPECIALTY: T150 Material technology

Publications

Category
Year
Publication
 
1.2.
2011
1.2.
2011
1.2.
2011
1.2.
2011
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
5.2.
2010
26.06.2018
  • Leitud 19 kirjet
PublikatsioonAutoridAastaVäljaande pealkiriKlassifikaatorFailAsutused
Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser RadiationOnufrijevs, P.; Medvid, A.; Dauksta, E.; Trautnitz, T.2011Advanced Materials Research1.2.
P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells ApplicationsMedvid, A.; Onufrijevs, P.; Dauksta, E.; Barloti, J.; Ulyashin, A.G.; Dmytruk, I.; Pundyk, I.2011Advanced Materials Research1.2.
Suppression of Pores Formation on a Surface of p-Si by Laser RadiationMedvid, A.; Onufrijevs, P.; Fedorenko, L.; Yusupov, N.; Edvins Dauksta, E.2011Advanced Materials Research1.2.
“Black Silicon” Formation by Nd:YAG Laser RadiationMedvid, A.; Onufrijevs, P.; Dauksta, E.; Kyslyi, V.2011Advanced Materials Research1.2.
Black silicon formation by Nd:YAG laser radiationDaukšta, E.20105.2.
Decrease of Point Defect Concentration at a Surface of ZnO by Powerful Laser RadiationDaukšta, E:20105.2.
Formation of p-n Junction in ITO/P-Si Structure by Nd:YAG Laser Radiation for Solar Cells ApplicationDaukšta, E.20105.2.
Formation of “Black Silicon” by Laser Radiation for Solar Cells ApplicationDaukšta, E.20105.2.
Increased Radiation Hardness of CdZnTe, by Laser RadiatonDaukšta, E.20105.2.
Infrared and Visible Light Pulsed Laser IrradiationDaukšta, E.20105.2.
Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells ApplicationsDaukšta, E.20105.2.
Mechanisms of Strong Photoluminescence of Si Nanoparticles Daukšta, E.20105.2.
Si, CdTe Nanocrystals and Surface Structuring for Solar Cell ApplicationDaukšta, E.20105.2.
Suppression of Pores Formation on a Surface of p-Si by Laser RadiationMedvid, A.; Onufrijevs, P.; Fedorenko, L.; Yusupov, N.; Dauksta, E.2009Solid State Phenomena1.2.
Dynamics of Nanostructure Formation Using Point Defects on Semiconductors by Laser RadiationBarloti, J.; Daukšta, E.; Grabovskis, D.; Medvids, A.; Onufrijevs, P.; Plūdons, A.; Ulyashin, A.2009physica status solidi (c)3.1.
Formation of “Black Silicon” on a Surface of Ni/Si Structure by Nd:Yag Laser RadiationMedvids, A.; Karabko, A.; Onufrijevs, P.; Daukšta, E.; Dostanko, A.20093.4.
Influence of Powerful Laser Radiation on Formation of Pores in Si by Electrochemical EtchingMedvid, A.; Onufrijev, P.; Fedorenko, L.; Yusupov, M.; Dauksta, E.2009Journal of Automation Mobile Robotics and Intelligent Systems3.4.
Formation of Micro-Cones on a Surface of Ni/Si Structure By Nd:Yag Laser RadiationDaukšta, E.20095.2.
Properties of Porous Si Fabricated by Laser Radiation and Subsequent Electrochemical Etching Daukšta, E.; Fedorenko, L.; Medvids, A.; Onufrijevs, P.; Rimshans, J.20083.1.