CV: Jaan Aarik

Career

Institution and occupation

01.09.2009–31.08.2014

University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Professor of Solid state technology (1,00)

01.01.2008–30.04.2008

University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow extraordinarius (1,00)

2008–2009

University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Researcher (1,00)

01.01.2002–31.12.2007

Institute of Physics, University of Tartu (researcher)

01.01.1997–31.12.1999

Coherent Tutcore Ltd. (consultant)

01.01.1994–31.12.1997

Tampere University of Technology (researcher)

01.01.1990–31.12.1992

Institute of Physics, Estonian Academy of Sciences (senior researcher)

01.01.1986–31.12.2001

University of Tartu (engineer, senior researcher, head of division, researcher)

01.01.1974–31.12.1986

Institute of Physics, Acad. Sci. Estonian SSR (junior researcher, senior researcher)

01.01.1971–31.12.1974

Tartu State University (research assistant)

R&D related managerial and administrative work

2008−...

Head of the Laboratory of Thin Film Technology

2007−...

Member of the Scientific Council of the Institute of Physics, University of Tartu

2009−2012

Member of Estonian Research Council

Publications

Category

Year

Publication

1.1.

2015

Sven Lange, Tõnis Arroval, Rando Saar, Ilmar Kink, Jaan Aarik, Andres Krumme (2015). Oxygen Barrier Properties of Al2O3- and TiO2-coated LDPE Films. Polymer-Plastics Technology and Engineering, 54 (3), 301−304.10.1080/03602559.2014.977426.

1.1.

2015

Castán, H.; Dueñas, S.; García, H.; Bailón, L.; Kukli, K.; Tamm, A.; Kozlova, J.; Aarik, J.; Mizohata, K. (2015). Charge and current hysteresis in dysprosium-doped zirconium oxide thin films. Microelectronic Engineering, 147, 55−58.10.1016/j.mee.2015.04.022.

1.1.

2015

Kiisk, Valter; Tamm, Aile; Utt, Kathriin; Kozlova, Jekaterina; Mändar, Hugo; Puust, Laurits; Aarik, Jaan; Sildos, Ilmo. (2015). Photoluminescence of atomic layer deposited ZrO2:Dy3+ thin films. Thin Solid Films, 583, 70−75.10.1016/j.tsf.2015.03.041.

1.1.

2015

Tamm, Aile; Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo. (2015). Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition. Journal of Vacuum Science & Technology A-Vacuum Surfaces and Films, 33 (1), 01A127.10.1116/1.4902079.

1.1.

2015

Niilisk, Ahti; Kahro, Tauno; Kiisk, Valter; Rähn, Mihkel; Alles, Harry; Aarik, Jaan; Sammelselg, Väino (2015). Raman modes in transferred bilayer CVD graphene. Open Physics, 13 (1), 34−40.10.1515/phys-2015-0003.

1.1.

2015

Arroval, Tõnis; Aarik, Lauri; Rammula, Raul; Aarik, Jaan (2015). Growth of TixAl1−xOy films by atomic layer deposition using successive supply of metal precursors. Thin Solid Films, 591 (B), 276−284.10.1016/j.tsf.2015.03.014.

1.1.

2014

Aarik, Lauri; Arroval, Tõnis; Rammula, Raul; Mändar, Hugo; Sammelselg, Väino; Hudec, Boris; Hušeková, Kristína; Fröhlich, Karol; Aarik, Jaan (2014). Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors. Thin Solid Films, 565, 19−24.DOI:10.1016/j.tsf.2014.06.038.

1.1.

2014

Tamm, Aile; Kozlova, Jekaterina; Aarik, Lauri; Aidla, Aleks; Lu, Jun; Kiisler, Alma-Asta; Kasikov, Aarne; Ritslaid, Peeter; Mändar, Hugo; Hultman, Lars; Sammelselg, Väino; Kukli, Kaupo; Aarik, Jaan (2014). Atomic layer deposition of ZrO2 for graphene-based multilayer structures: In situ and ex situ characterization of growth process. Physica Status Solidi A - Applications and Materials Science, 211 (2), 397−402.10.1002/pssa.201330106.

1.1.

2014

Arroval, T.; Aarik, L.; Rammula, R.; Mändar, H.; Aarik, J.; Hudec, B.; Hušekova, K.; Fröhlich, K. (2014). Influence of growth temperature on the structure and electrical properties of high-permittivity TiO2 films in TiCl4-H2O and TiCl4-O3 atomic-layer-deposition processes. Physica Status Solidi A - Applications and Materials Science, 211 (2), 425−432.10.1002/pssa.201330086.

1.1.

2014

Aarik, Lauri; Alles, Harry; Aidla, Aleks; Kahro, Tauno; Kukli, Kaupo; Niinistö, Jaakko; Mändar, Hugo; Tamm, Aile; Rammula, Raul; Sammelselg, Väino; Aarik, Jaan (2014). Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O. Thin Solid Films, 565, 37−44.10.1016/j.tsf.2014.06.052.

1.1.

2014

Jaaniso, Raivo; Kahro, Tauno; Kozlova, Jekaterina; Aarik, Jaan; Aarik, Lauri; Alles, Harry; Floren, Aare; Gerst, Alar; Kasikov, Aarne; Niilisk, Ahti; Sammelselg, Väino (2014). Temperature induced inversion of oxygen response in CVD graphene on SiO2. Sensors and Actuators B-Chemical, 190, 1006−1013.10.1016/j.snb.2013.09.068.

1.1.

2013

Aarik, Jaan; Arroval, Tõnis; Aarik, Lauri; Rammula, Raul; Kasikov, Aarne; Mändar, Hugo; Hudec, Boris; Hus'ekova, Kristina; Fröhlich, Karol (2013). Atomic layer deposition of rutile phase TiO₂ on RuO₂ from TiCl₄ and O₃: Growth of high-permittivity dielectrics with low leakage current. Journal of Crystal Growth, 382, 61−66.10.1016/jjcrystgro.2013.08.006.

1.1.

2013

Tamm, Aile; Peikolainen, Anna-Liisa; Kozlova, Jekaterina; Mändar, Hugo; Aidla, Aleks; Rammula, Raul; Aarik, Lauri; Roosalu, Kaspar; Lu, Jun; Hultman, Lars; Koel, Mihkel; Kukli, Kaupo; Aarik, Jaan (2013). Atomic layer deposition of high-k dielectrics on carbon nanoparticles. Thin Solid Films, 538, 16−20.dx.doi.org/10.1016/j.tsf.2012.09.071.

1.1.

2013

Sammelselg, V.; Netšipailo, I.; Aidla, A.; Tarre, A.; Aarik, L.; Asari, J.; Ritslaid, P.; Aarik, J. (2013). Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition. Thin Solid Films, 542, 219−224.10.1016/j.tsf.2013.06.079.

1.1.

2013

Aarik, Lauri; Arroval, Tõnis; Rammula, Raul; Mändar, Hugo; Sammelselg, Väino; Aarik, Jaan (2013). Atomic layer deposition of TiO2 from TiCl4 and O3. Thin Solid Films, 542, 100−107.10.1016/j.tsf.2013.06.074.

1.1.

2013

Hudec, Boris; Hus'ekova, Kristina; Rosova, Alica; S'oltys, Jan; Rammula, Raul; Kasikov, Aarne; Uustare, Teet; Mic'us'ik, Matej; Omastova, Maria; Aarik, Jaan; Fröhlich, Karol (2013). Impact of plasma treatment on electrical properties of TiO₂/RuO₂ based DRAM capacitor. Journal of Physics D: Applied Physics, 46 (38), 385304−8.10.1088/oo22-3727/38/385304.

1.1.

2013

Tarre, Aivar; Möldre, Kristel; Niilisk, Ahti; Mändar, Hugo; Aarik, Jaan; Rosental, Arnold (2013). Atomic layer deposition of epitaxial TiO₂ II on c-sapphire. Journal of Vacuum Science and Technology A, 31 (1), 01A118-1−01A118-5.10.1116/1.4764892.

1.1.

2013

Mändar, Hugo; Rammula, Raul; Aidla, Aleks; Aarik, Jaan (2013). Atomic layer deposition of epitaxial HfO2 thin films on r-cut sapphire. Journal of Materials Research, 28 (13), 1680−1686.10.1557/jmr.2013.120.

1.1.

2012

Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Jõgi, Indrek; Arroval, Tõnis; Lu, Jun; Sajavaara, Timo; Laitinen, Mikko; Kiisler, Alma-Asta; Ritala, Mikko; Leskelä, Markku; Peck, John; Natwora, Jim; Geary, Joan; Spohn, Ronald; Meiere, Scott; Thompson, David M. (2012). Atomic layer deposition of Ru films from bis(2,5-dimethylpyrrolyl)ruthenium and oxygen. Thin Solid Films, 520 (7), 2756−2763.10.1016/j.tsf.2011.11.088.

1.1.

2012

Aarik, Jaan; Hudec, Boris; Hus'ekova, Kristina; Rammula, Raul; Kasikov, Aarne, Arroval, Tõnis; Uustare, Teet; Fröhlich, Karol (2012). Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes. Semiconductor Science and Technology, 27 (7), 074007−(6).10.1088/0268-1242/27/7/074007.

1.1.

2011

Fröhlich, K.; Hudec, B.; Aarik, J.; Tarre, A.; Machajdik, D.; Kasikov, A.; Hus'ekova, K.; Gaz'i, S'. (2011). Post-deposition processing and oxygen content of TiO₂-based capacitors. Microelectronic Engineering, 88 (7), 1525−1528.10.1016/j.mee.2011.03.129.

1.1.

2011

Hudec, Boris; Hus'ekova, Kristina; Tarre, Aivar; Jeong, Hwan Han; Sosa, Han; Rosova, Alica; Lee, Woongkyu; Kasikov, Aarne; Seul, Ji Song; Aarik, Jaan; Cheol, Song Hwang; Fröhlich, Karol (2011). Electric properties of TiO₂-based MIM capacitors deposited by TiCl₄ and TTIP based atomic layer deposition processes. Microelectronic Engineering, 88 (7), 1514−1516.10.1016/j.mee.2011.03.059.

1.1.

2011

Racko, J.; Mikolášek, M.; Harmatha, L.; Breza, J.; Hudec, B.; Fröhlich, K.; Aarik, J.; Tarre, A.; Granzner, R.; Schwierz, F. (2011). Analysis of leakage current mechanisms in RuO2-TiO2-RuO2 MIM structures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 29 (1), 01AC08.10.1116/1.3534022.

1.1.

2011

Hudec, B.; Hus'ekova, K.; Dobroc'ka, E.; Aarik, J.; Rammula, R.; Kasikov, A.; Tarre, A.; Vincze, A.; Fröhlich, K. (2011). Atomic layer deposition grown metal-insulator-metal capacitors with RuO₂ electrodes and Al-doped rutile dielectric layer. Journal of Vacuum Science and Technology B, 29 (1), 01AC09-1−01AC09-7.

1.1.

2011

Kukli, K.; Kemell, M.; Puukilainen, E.; Aarik, J.; Aidla, A.; Sajavaara, T.; Laitinen, M.; Tallarida, M.; Sundqvist, J.; Ritala, M.; Leskelä, M. (2011). Atomic layer deposition of ruthenium films from (ethylcyclopentadienyl)(pyrrolyl)ruthenium and oxygen. Journal of the Electrochemical Society, 158 (3), D158−D165.10.1149/1.3533387.

1.1.

2010

Sammelselg, V.; Tarre, A.; Lu, J.; Aarik, J.; Niilisk, A.; Uustare, T.; Netšipailo, I.; Rammula, R.; Pärna, R.; Rosental, A. (2010). Structural characterization of TiO2–Cr2O3 nanolaminates grown by atomic layer deposition. Surface and coatings technology, 204, 2015−2018.10.1016/j.surfcoat.2009.11.039.

1.1.

2010

Rammula, R.; Aarik, J.; Mändar, H.; Ritslaid, P.; Sammelselg, V. (2010). Atomic layer deposition of HfO2: Effect of structure development on growth rate, morphology and optical properties of thin films. Applied Surface Science, 257 (3), 1043−1052.10.1016/j.apsusc.2010.07.105.

1.1.

2010

Kukli, K.; Aarik, J.; Aidla, A.; Uustare, T.; Jõgi, I.; Lu, J.; Tallarida, M.; Kemell, M.; Kiisler, A-A; Ritala, M.; Leskelä, M. (2010). Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1'-methyl-ruthenocene. Journal of Crystal Growth, 312, 2025−2032.

1.1.

2010

Jõgi, I., Kukli, K., Ritala, M., Leskelä, M., Aarik, J., Aidla, A., Lu, J. (2010). Atomic layer deposition of high capacitance density Ta2O5–ZrO2 based dielectrics for metal–insulator–metal structures. Microelectronic Engineering, 87 (2), 144−149.10.1016/j.mee.2009.06.032.

1.1.

2009

Fröhlich, K.; Aarik, J.; Ťapajna, M.; Rosová, A.; Aidla, A.; Dobročka, E.; Hušková, K. (2009). Epitaxial growth of high-k TiO2 rutile films on RuO2 electrodes. Journal of Vacuum Science and Technology B, 27 (1), 266−270.10.1116/1.3021030.

1.1.

2009

Oja Acik, I.; Katerski, A.; Mere, A.; Aarik, A.; Aidla, A.; Dedova, T.; Krunks, M. (2009). Nanostructured solar cell by spray pyrolysis: Effect of titania barrier layer on the cell performance. Thin Solid Films, 517 (7), 2443−2447.10.1016/j.tsf.2008.11.018.

1.1.

2008

Lange, S.; Sildos, I.; Hartmanova, M.; Aarik, J.; Kiisk, V. (2008). Luminescence properties of Sm3+-doped polycrystalline ZrO2. Journal of Non-Crystalline Solids, 354, 4380−4382.10.1016/j.jnoncrysol.2008.06.054.

1.1.

2008

Fröhlich, K.; Ťapajna, M.; Rosová, A.; Dobročka, E.; Hušeková, K.; Aarik, J.; Aidla, A. (2008). Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes. Electrochemical and Solid-State Letters, 11 (6), G19−G21.10.1149/1.2898184.

1.1.

2008

Dueñas, S.; Castán, H.; García, H.; Gómez, A.; Bailón, L.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelä, M. (2008). Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors. Journal of the Electrochemical Society, 155 (11), G241−G246.

1.1.

2008

Josepson, R.; Laan, M.; Aarik, J.; Kasikov, A. (2008). Photoinduced field-assisted electron emission from dielectric-coated electrodes into gases. Journal of Physics D: Applied Physics, 41, 135209.10.1088/0022-3727/41/13/135209.

1.1.

2008

Rooth, M.; Johansson, A.; Kukli, K.; Aarik, J.; Boman, M.; Hårsta, A. (2008). Atomic layer deposition of iron oxide thin films and nanotubes using ferrocene and oxygen as precursors. Chemical Vapor Deposition, 14, 67−70.10.1002/cvde.200706649.

1.1.

2008

Tarre, A.; Aarik, J.; Mändar, H.; Niilisk, A.; Pärna, R.; Rammula, R.; Uustare, T.; Rosental, A.; Sammelselg, V. (2008). Atomic layer deposition of Cr₂O₃ thin films: Effect of crystallization on growth and properties. Applied Surface Science, 254 (16), 5149−5156.10.1016/j.apsusc.2008.02.016.

1.1.

2008

Jõgi, I.; Pärs, M.; Aarik, J.; Aidla, A.; Laan, M.; Sundqvist, J.; Oberbeck, L.; Heitmann, J.; Kukli, K. (2008). Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates. Thin Solid Films, 516 (15), 4855−4862.10.1016/j.tsf.2007.09.008.

1.1.

2008

García, H.; Dueñas, S.; Castán, H.; Bailón, L.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelä, M. (2008). Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices. Journal of Non-Crystalline Solids, 354, 393−398.

1.1.

2007

Kukli, K.; Ritala, M.; Leskelä, M., Sundqvist, J.; Oberbeck, L.; Heitmann, J.; Schröder, U.; Aarik, J.; Aidla, A. (2007). Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics. Thin Solid Films, 515 (16), 6447−6451.

1.1.

2007

Laan, M.; Josepson, R.; Aarik, J. (2007). UV-initiated current in point–plane gap. Journal of Physics D: Applied Physics, 40 (11), 3402−3407.

1.1.

2007

Mändar, H.; Uustare, T.; Aarik, J.; Tarre, A.; Rosental, A. (2007). Characterization of asymmetric rhombohedra twin in epitaxial a-Cr2O3 thin films by X-ray and electron diffraction. Thin Solid Films, 515 (11), 4570−4579.10.1016/j.tsf.2006.11.037.

1.1.

2007

Sammelselg, V.; Rammula, R.; Aarik, J.; Kikas, A.; Kooser, K.; Käämbre, T. (2007). XPS ad AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon. Journal of Electron Spectroscopy and Related Phenomena, 156, 150−154.dx.doi.org/10.1016/j.elspec.2006.12.070.

1.1.

2007

Kikas, A.; Aarik, J.; Kisand, V.; Kooser, K.; Käämbre, T.; Mändar, H.; Uustare, T.; Rammula, R.; Sammelselg, V.; Martinson, I. (2007). Effect of phase composition of X-ray absorption spectra of ZrO2 thin films. Journal of Electron Spectroscopy and Related Phenomena, 156, 303−306.10.1016/j.elspec.2006.11.031.

1.1.

2006

Kasikov, A.; Aarik, J.; Mandar, H.; Moppel, M.; Pars, M.; Uustare, T. (2006). Refractive index gradients in TiO2 thin films grown by atomic layer deposition. Journal of Physics D: Applied Physics, 39 (1), 54−60.

1.1.

2006

Jõgi, I.; Kukli, K.; Aarik, J.; Aidla, A.; Lu, J. (2006). Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide. Materials Science in Semiconductor Processing, 9 (6), 1084−1089.10.1016/j.mssp.2006.10.027.

1.1.

2006

Mitchell, D.R.G.; Aidla, A.; Aarik, J. (2006). Transmission electron microscopy studies of HfO2 thin films grown by chloride-based atomic layer deposition. Applied Surface Science, 253 (2), 606−617.

1.1.

2006

Aarik, J.; Aidla, A.; Kasikov, A.; Mändar, H.; Rammula, R.; Sammelselg, V. (2006). Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2and ZrO2 thin films. Applied Surface Science, 252 (16), 5723−5734.

1.1.

2006

Lulla, M.; Asari, J.; Aarik, J.; Kukli, K.; Rammula, R.; Tapper, U.; Kauppinen, E.; Sammelselg, V. (2006). Electron Probe Microanalysis of HfO2 Thin Films on Conductive and Insulating Substrates. Microchimica Acta, 155, 195−198.10.1007/s00604-006-0542-9.

1.1.

2006

Matulevich, Y.; Lee, M.; Kim, J.; Choi, J.; Kim, S.; Suh, S.; Zang, D.; Aarik, J.; Aidla, A.; Aints, M.; Raud, J.; Kirm, M. (2006). Ion induced electron emission from different crystalline phase of ZrO2. Applied Physics Letters, 88 (1), 211504.

1.1.

2006

Jõgi, I.; Aarik, J.; Laan, M.; Jun, L.; Kukli, K.; Käämbre, H.; Sajavaara, T.; Uustare, T. (2006). Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks. Thin Solid Films, 510, 39−47.

1.1.

2006

Niilisk, A; Moppel, M; Pärs, M; Sildos, I; Jantson, T; Avarmaa, T; Jaaniso, R; Aarik, J (2006). Structural study of TiO₂ thin films by micro-Raman spectroscopy. Central European Journal of Physics, 4 (1), 105−116.10.1007/s11534-005-0009-3.

1.1.

2006

Lange, S.; Kiisk, V.; Reedo, V.; Kirm, M.; Aarik, J.; Sildos, I. (2006). Luminescence of RE-ions in HfO₂ thin films and some possible applications. Optical Materials, 28 (11), 1238 −1242.

1.1.

2006

Dueñas, S.; Castán, H.; García, H.; Castro, A.; Bailón, L.; Kukli, K.; Aidla, A.; Aarik, J.; Mändar, H.; Uustare, T.; Lu, J.; Hårsta, A. (2006). Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon. Journal of Applied Physics, 99 (5), 054902 -1−054902-8.

1.1.

2005

Kukli, K.; Aarik, J.; Uustare, T.; Lu, J.; Ritala, M.; Aidla, A.; Pung, L.; Harsta, A.; Leskela, M.; Kikas, A.; Sammelselg, V. (2005). Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature. Thin Solid Films, 479, 1−11.

1.1.

2005

Kukli, K.; Ritala, M.; Pilvi, T.; Aaltonen, T.; Aarik, J.; Lautala, M.; Leskela, M. (2005). Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 118, 112−116.

1.1.

2005

Kiisk, V.; Sildos, I.; Lange, S.; Reedo, V.; Tatte, T.; Kirm, M.; Aarik, J. (2005). Photoluminescence characterization of pure and Sm3+-doped thin metaloxide films. Applied Surface Science, 247, 412−417.

1.1.

2005

Lu, J.; Aarik, J.; Sundqvist, J.; Kukli, K.; Harsta, A.; Carlsson, JO. (2005). Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate. Journal of Crystal Growth, 273, 510−514.

1.1.

2005

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Ritala, M.; Leskela, M. (2005). Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. Microelectronics Reliability, 45, 949−952.

1.1.

2005

Duenas, S.; Castan, H.; Garcia, H.; San Andres, E.; Toledano-Luque, M.; Martil, I.; Gonzalez-Diaz, G.; Kukli, K.; Uustare, T.; Aarik, J. (2005). A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition. Semiconductor Science and Technology, 20 (10), 1044−1051.

1.1.

2005

Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films. Journal of Materials Science, 40 (16), 4293−4298.

1.1.

2005

Kukli, K.; Aaltonen, T.; Aarik, J.; Lu, J.; Ritala, M.; Ferrari, S.; Harsta, A.; Leskela, M. (2005). Atomic layer deposition and characterization of HfO2 films on noble metal film substrates. Journal of the Electrochemical Society, 152 (7), F75−F82.

1.1.

2005

Tkachev, SN.; Manghnani, MH.; Niilisk, A.; Aarik, J.; Mandar, H. (2005). Raman and Brillouin scattering spectroscopy studies of atomic layer-deposited ZrO2 and HfO2 thin films. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 61 (10), 2434−2438.

1.1.

2004

Aarik, J.; Mandar, H.; Kirm, M.; Pung, L. (2004). Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films, 466, 41−47.

1.1.

2004

Lange, S.; Sildos, I.; Kiisk, V.; Aarik, J. (2004). Energy transfer in the photoexcitation of Sm3+-implanted TiO2 thin films. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 112 (1), 87−90.

1.1.

2004

Kiisk, V.; Sildos, I.; Sild, O.; Aarik, J. (2004). The influence of a waveguiding structure on the excitonic luminescence of anatase thin films. Optical Materials, 27 (1), 115−118.

1.1.

2004

Lu, J.; Sundqvist, J.; Ottosson, M.; Tarre, A.; Rosental, A.; Aarik, J.; Harsta, A. (2004). Microstructure characterisation of ALD-grown epitaxial SnO2 thin films. Journal of Crystal Growth, 260, 191−200.

1.1.

2004

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Aidla, A. (2004). The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon. Semiconductor Science and Technology, 19 (9), 1141−1148.

1.1.

2004

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J. (2004). Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon. Journal of Applied Physics, 96 (3), 1365−1372.

1.1.

2004

Kukli, K.; Aarik, J.; Ritala, M.; Uustare, T.; Sajavaara, T.; Lu, J.; Sundqvist, J.; Aidla, A.; Pung, L.; Harsta, A.; Leskela, M. (2004). Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films. Journal of Applied Physics, 96 (9), 5298−5307.

1.1.

2004

Aarik, J.; Bichevin, V.; Jogi, I.; Kaambre, H.; Laan, M.; Sammelselg, V. (2004). Fowler-Nordheim tunnelling in Au-TiO2-Ag film structures. Central European Journal of Physics, 2 (1), 147−159.

1.1.

2004

Aarik, J.; Aidla, A.; Kikas, A.; Kaambre, T.; Rammula, R.; Ritslaid, P.; Uustare, T.; Sammelselg, V. (2004). Effects of precursors on nucleation in atomic layer deposition of HfO₂. Applied Surface Science, 230, 292−300.

1.1.

2003

Sundqvist, J.; Harsta, A.; Aarik, J.; Kukli, K.; Aidla, A. (2003). Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O-2 precursor combination. Thin Solid Films, 427, 147−151.

1.1.

2003

Rosenthal, A.; Tarre, A.; Gerst, A.; Sundqvist, J.; Harsta, A.; Aidla, A.; Aarik, J.; Sammelselg, V.; Uustare, T. (2003). Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition. Sensors and Actuators B-Chemical, 93, 552−555.

1.1.

2003

Laan, M.; Aarik, J.; Josepson, R.; Repan, V. (2003). Low current mode of negative coronas: mechanism of electron emission. Journal of Physics D: Applied Physics, 36 (21), 2667−2672.

1.1.

2002

Kukli, K.; Ritala, M.; Uustare, T.; Aarik, J.; Forsgren, K.; Sajavaara, T.; Leskela, M.; Harsta, A. (2002). Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon. Thin Solid Films, 410, 53−60.

1.1.

2002

Aarik, J.; Sundqvist, J.; Aidla, A.; Lu, J.; Sajavaara, T.; Kukli, K.; Harsta, A. (2002). Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films. Thin Solid Films, 418 (2), 69−72.

1.1.

2002

Aarik, J.; Aidla, A.; Mandar, H.; Uustare, T.; Sammelselg, V. (2002). Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process. Thin Solid Films, 408, 97−103.

1.1.

2002

Sammelselg, V.; Rauhala, E.; Arstila, K.; Zakharov, A.; Aarik, J.; Kikas, A.; Karlis, J.; Tarre, A.; Seppala, A.; Asari, J.; Martinson, I. (2002). Study of thin oxide films by electron, ion and synchrotron radiation beams. Mikrochimica Acta, 139, 165−169.

1.1.

2002

Aarik, J.; Aidla, A.; Mandar, H.; Uustare, T.; Schuisky, M.; Harsta, A. (2002). Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on alpha-Al2O3 substrates. Journal of Crystal Growth, 242, 189−198.

1.1.

2002

Aarik, J.; Aidla, A.; Uustare, T.; Kukli, K.; Sammelselg, V.; Ritala, M.; Leskela, M. (2002). Atomic layer deposition of TiO2 thin films from TiI4 and H2O. Applied Surface Science, 193, 277−286.

1.1.

2002

Schuisky, M.; Kukli, K.; Aarik, J.; Lu, J.; Harsta, A. (2002). Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process. Journal of Crystal Growth, 235, 293−299.

1.1.

2002

Tarre, A.; Rosental, A.; Aidla, A.; Aarik, J.; Sundqvist, J.; Harsta, A. (2002). New routes to SnO2 heteroepitaxy. Vacuum, 67, 571−575.

1.1.

2002

Kukli, K.; Ritala, M.; Aarik, J.; Uustare, T.; Leskela, M. (2002). Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition. Journal of Applied Physics, 92 (4), 1833−1840.

1.1.

2002

Kukli, K.; Ritala, M.; Sundqvist, J.; Aarik, J.; Lu, J.; Sajavaara, T.; Leskela, M.; Harsta, A. (2002). Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Journal of Applied Physics, 92 (10), 5698−5703.

1.1.

2002

Forsgren, K.; Harsta, A.; Aarik, J.; Aidla, A.; Westlinder, J.; Olsson, J. (2002). Deposition of HfO2 thin films in HfI4-based processes. Journal of the Electrochemical Society, 149 (10), F139−F144.

1.1.

2001

Aarik, J.; Aidla, A.; Mandar, H.; Uustare, T.; Kukli, K.; Schuisky, M. (2001). Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures. Applied Surface Science, 173, 15−21.

1.1.

2001

Kukli, K.; Aarik, J.; Aidla, A.; Forsgren, K.; Sundqvist, J.; Harsta, A.; Uustare, T.; Mandar, H.; Kiisler, AA. (2001). Atomic layer deposition of tantalum oxide thin films from iodide precursor. Chemistry of Materials, 13 (1), 122−128.

1.1.

2001

Kiisk, V.; Sildos, I.; Suisalu, A.; Aarik, J. (2001). Spectral narrowing of self-trapped exciton emission in anatase thin films. Thin Solid Films, 400, 130−133.

1.1.

2001

Aarik, J.; Aidla, A.; Mandar, H.; Uustare, T. (2001). Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism. Applied Surface Science, 172, 148−158.

1.1.

2001

Kukli, K.; Forsgren, K.; Aarik, J.; Uustare, T.; Aidla, A.; Niskanen, A.; Ritala, M.; Leskela, M.; Harsta, A. (2001). Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide. Journal of Crystal Growth, 231, 262−272.

1.1.

2001

Aarik, J.; Karlis, J.; Mandar, H.; Uustare, T.; Sammelselg, V. (2001). Influence of structure development on atomic layer deposition of TiO2 thin films. Applied Surface Science, 181, 339−348.

1.1.

2001

Schuisky, M.; Aarik, J.; Kukli, K.; Aidla, A.; Harsta, A. (2001). Atomic layer deposition of thin films using O-2 as oxygen source. Langmuir, 17 (18), 5508−5512.

1.1.

2001

Kukli, K.; Forsgren, K.; Ritala, M.; Leskela, M.; Aarik, J.; Harsta, A. (2001). Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor. Journal of the Electrochemical Society, 148 (12), F227−F232.

1.1.

2000

Aarik, J.; Aidla, A.; Mandar, H.; Sammelselg, V.; Uustare, T. (2000). Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition. Journal of Crystal Growth, 220, 105−113.

1.1.

2000

Aarik, J.; Aidla, A.; Sammelselg, V.; Uustare, T.; Ritala, M.; Leskela, M. (2000). Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water. Thin Solid Films, 370, 163−172.

1.1.

2000

Sildos, I.; Suisalu, A.; Aarik, J.; Sekiya, T.; Kurita, S. (2000). Self-trapped exciton emission in crystalline anatase. Journal of Luminescence, 87-9, 290−292.

1.1.

2000

Aarik, J.; Aidla, A.; Uustare, T.; Ritala, M.; Leskela, M. (2000). Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process. Applied Surface Science, 161, 385−395.

1.1.

2000

Aarik, J.; Aidla, A.; Mandar, H.; Sammelselg, V. (2000). Anomalous effect of temperature on atomic layer deposition of titanium dioxide. Journal of Crystal Growth, 220 (4), 531−537.

1.1.

2000

Schuisky, M.; Harsta, A.; Aidla, A.; Kukli, K.; Kiisler, AA.; Aarik, J. (2000). Atomic layer chemical vapor deposition of TiO2 - Low temperature epitaxy of rutile and anatase. Journal of the Electrochemical Society, 147 (9), 3319−3325.

1.1.

2000

Kukli, K.; Aidla, A.; Aarik, J.; Schuisky, M.; Harsta, A.; Ritala, M.; Leskela, M. (2000). Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O2. Langmuir, 16 (21), 8122−8128.

1.1.

1999

Jansen, M.; Bournes, P.; Corvini, P.; Fang, F.; Finander, M.; Hmelar, M.; Johnston, T.; Jordan, C.; Nabiev, R.; Nightingale, J.; Widman, M.; Asonen, H.; Aarik, J.; Salokatve, A.; Nappi, J.; Rakennus, K. (1999). High performance laser diode bars with aluminum-free active regions. Optics Express, 4 (1), 3−11.

1.1.

1999

Aarik, J.; Aidla, A.; Kiisler, AA.; Uustare, T.; Sammelselg, V. (1999). Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films. Thin Solid Films, 340, 110−116.

1.1.

1999

Repan, V.; Laan, M.; Paris, P.; Aarik, J.; Sammelselg, V. (1999). Negative coronas: Low current mode - Pulse mode transition. Czechoslovak Journal of Physics, 49 (2), 217−224.

1.1.

1999

Sammelselg, V.; Aarik, J.; Aidla, A.; Kasikov, A.; Heikinheimo, E.; Peussa, M.; Niinisto, L. (1999). Composition and thickness determination of thin oxide films: comparison of different programs and methods. Journal of Analytical Atomic Spectrometry, 14 (3), 523−527.

1.1.

1998

Ruus, R.; Saar, A.; Aarik, J.; Aidla, A.; Uustare, T.; Kikas, A. (1998). Resonant Auger spectra of TiO2 at Ti 2p and O 1s absorption edges. Journal of Electron Spectroscopy and Related Phenomena, 93, 193−199.

1.1.

1998

Suisalu, A.; Aarik, J.; Mandar, H.; Sildos, I. (1998). Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition. Thin Solid Films, 336, 295−298.

1.1.

1997

Ruus, R.; Kikas, A.; Saar, A.; Ausmees, A.; Nommiste, E.; Aarik, J.; Aidla, A.; Uustare, T.; Martinson, I. (1997). Ti 2p and O 1s X-ray absorption of TiO2 polymorphs. Solid State Communications, 104 (4), 199−203.

1.1.

1997

Kukli, K.; Aarik, J.; Aidla, A.; Siimon, H.; Ritala, M.; Leskela, M. (1997). In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)(5) and H2O. Applied Surface Science, 112, 236−242.

1.1.

1997

Aarik, J.; Aidla, A.; Sammelselg, V.; Uustare, T. (1997). Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process. Journal of Crystal Growth, 181 (3), 259−264.

1.1.

1997

Aarik, J.; Aidla, A.; Kiisler, AA.; Uustare, T.; Sammelselg, V. (1997). Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition. Thin Solid Films, 305, 270−273.

1.1.

1997

Siimon, H.; Aarik, J. (1997). Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors. Journal of Physics D: Applied Physics, 30 (12), 1725−1728.

1.1.

1996

Aarik, J.; Aidla, A.; Uustare, T. (1996). Atomic-layer growth of TiO2-II thin films. Philosophical Magazine Letters, 73 (3), 115−119.

1.1.

1996

Tappura, K.; Aarik, J.; Pessa, M. (1996). High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy. IEEE Photonics Technology Letters, 8 (3), 319−321.

1.1.

1996

Aarik, J.; Kukli, K.; Aidla, A.; Pung, L. (1996). Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O. Applied Surface Science, 103 (4), 331−341.

1.1.

1996

Aarik, J.; Aidla, A.; Sammelselg, V.; Siimon, H.; Uustare, T. (1996). Control of thin film structure by reactant pressure in atomic layer deposition of TiO2. Journal of Crystal Growth, 169 (3), 496−502.

1.1.

1996

Tappura, K.; Aarik, J.; Nurmi, T.; Pessa, M. (1996). Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers. Applied Physics Letters, 68 (24), 3383−3385.

1.1.

1995

Siimon, H.; Aarik, J. (1995). Modeling of precursor flow and deposition in atomic layer deposition reactor. Journal de Physique IV, 5, 245−252.

1.1.

1995

Aarik, J.; Aidla, A.; Uustare, T.; Sammelselg, V. (1995). Morphology and structure of TiO2 thin-films grown by atomic layer deposition. Journal of Crystal Growth, 148 (3), 268−275.

1.1.

1995

Kukli, K.; Aarik, J.; Aidla, A.; Kohan, O.; Uustare, T.; Sammelselg, V. (1995). Properties of tantalum oxide thin-films grown by atomic layer deposition. Thin Solid Films, 260 (2), 135−142.

1.1.

1995

Siimon, H.; Aarik, J. (1995). Reactivities of tacl5 and h2o as precursors for atomic layer deposition. Journal de Physique IV, 5, 277−282.

1.1.

1995

Aarik, J.; Siimon, H. (1995). Characterization of adsorption in flow-type atomic layer epitaxy reactor (vol 81, pg 281, 1994). Applied Surface Science, 90 (1), 109−109.

1.1.

1995

Siimon, H.; Aarik, J. (1995). Modeling of precursor flow and deposition in atomic layer deposition reactor. Journal de Physique IV, 5, 245−252.

1.1.

1994

Aarik, J.; Siimon, H. (1994). Characterization of adsorption in flow-type atomic layer epitaxy reactor. Applied Surface Science, 81 (3), 281−287.

1.1.

1994

Aarik, J.; Aidla, A.; Kukli, K.; Uustare, T. (1994). Deposition and etching of tantalum oxide-films in atomic layer epitaxy process. Journal of Crystal Growth, 144, 116−119.

1.1.

1994

Aarik, J.; Aidla, A.; Kukli, K. (1994). In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor. Applied Surface Science, 75, 180−184.

1.1.

1994

Aarik, J.; Aidla, A.; Jaek, A.; Leskela, M.; Niinisto, L. (1994). In-situ study of a strontium beta-diketonate precursor for thin-film growth by atomic layer epitaxy. Journal of Materials Chemistry, 4 (8), 1239−1244.

1.1.

1994

Uustare, T.; Aarik, J.; Elango, M. (1994). Oxygen depletion of the crystalline (anatase) TiO2 initiated by ionization of the k-shell. Applied Physics Letters, 65 (20), 2551−2552.

1.1.

1990

Aarik, J.; Aidla, A.; Jaek, A.; Kiisler, AA.; Tammik, AA. (1990). Properties of amorphous al2o3 films grown by ale. Acta Polytechnica Scandinavica-Chemical Technology Series, 195, 201−208.

1.1.

1987

Virro, A.; Aarik, J.; Lyuk, P.; Friedenthal, J. (1987). A study of the optical gain in AlGaAsSb/GaSb heterostructure lasers. Kvantovaya Elektronika, 14 (11), 2156−2161.

1.1.

1984

Aarik, YA. (1984). Apparatus for recording watt-current characteristics for a pulsed injection-laser. Instruments and Experimental Techniques, 27 (4), 998−999.

1.1.

1980

Aarik, YA.; Dolginov, LM.; Druzhinina, LV.; Eliseev, PG.; Louk, PA.; Milvidskij, MG.; Sverdlov, BN.; Friedenthal, JK. (1980). Epitaxial algaassb-gasb(algasb) heterostructures for injection-lasers. Kristall und Technik-Crystal Research and Technology, 15 (11), 1311−1316.

Programm	Number	Nimi	Projekti algus	Projekti lõpp	Vastutav täitja	Asutus	Finantseerijapoolne rahastamine

1.1.5.3.4.2.2.	LLTFY17350	Energiamuundamiskadude väljaselgitamine ja vähendamine ökonoomsetes päikesepatareides	09.03.2017	09.05.2020	Jaan Aarik	Tartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut	481 390,00 EUR
IUT	IUT2-24	Kilestruktuurid nanoelektroonika rakendusteks ja funktsionaalseteks pinnakateteks	01.01.2013	31.12.2018	Väino Sammelselg	Tartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut	2 688 000,00 EUR
MUU	SLOFY12164T (3.2.1101.12-0026)	Metalli pindasid funktsionaliseerivad ja kaitsvad õhukesed nanomaterjalidest pinnakatted	01.07.2012	31.12.2014	Väino Sammelselg	Tartu Ülikool	406 915,50 EUR
ETF	ETF9088	Mitte-isostruktuursed epitaksiaalsed kiled: kasvatamine ja struktuuri määramine	01.01.2012	31.12.2015	Hugo Mändar	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	54 825,60 EUR
IUT	IUT20-54	Nanomaterjalid - uuringud ja rakendused	01.01.2014	31.12.2019	Jaan Aarik	Tartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut	360 000,00 EUR
ETF	ETF7845	Nanomõõtmelised metall-dielektrik-struktuurid	01.01.2009	31.12.2012	Jaan Aarik	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond	65 680,38 EUR
SF	SF0382149s02	Nanostruktuursed materjalid	01.01.2002	31.12.2006	Arnold Rosental	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	792 696,19 EUR
ETF	ETF6999	Optiliste protsesside stimuleerimine ja kontroll oksiidsetes nanomaterjalides: rakendusvõimalusi fotoonikas ja sensoorikas	01.01.2007	31.12.2010	Ilmo Sildos	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond	61 030,00 EUR
MUU	SLOFY10093E	Paardunud spinnid grafeenis	01.06.2010	30.09.2013	Jaan Aarik	Tartu Ülikool; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	191 699,99 EUR
ETF	ETF5861	Pinna- ja siirdekihtide mõju laia keelutsooniga oksiidikilede aatomkihtkasvule ja omadustele	01.01.2004	31.12.2007	Arnold Rosental	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	102 754,59 EUR
SF	SF0180046s07	Pinnanähtused tahkisefüüsikas ja -tehnoloogias	01.01.2007	31.12.2012	Väino Sammelselg	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	1 590 665,57 EUR
MUU	SLOKT12180T (3.2.1101.12-0019)	Süsinik-nanomaterjalide funktsionalisatsioon, süntees, karakteriseerimine ja rakendused	01.04.2012	31.03.2015	Enn Lust	Tartu Ülikool	438 035,50 EUR
MUU	LLTFY16082	Tehnoloogiaalase nõustamise ja teostatavusuuringute läbiviimiseks GaAs p-i-n-struktuuride pinna passiveerimise alal	23.03.2016	19.05.2016	Jaan Aarik	Tartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut	5 000,00 EUR
MUU	SLOFY12189T (2.1.1101.12-0006)	Täiustatud materjalitehnoloogia GaAs-põhiste elektroonika seadiste valmistamiseks	01.07.2012	31.12.2014	Jaan Aarik	Tartu Ülikool; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond	402 467,50 EUR
SF	SF0382150s02	Valgustundlike materjalide laserspektroskoopia ja nende rakendused	01.01.2002	31.12.2006	Jaak Kikas	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	629 082,36 EUR
ETF	ETF5864	Õhukeste metalloksiidkilede ja -fiibrite spektroskoopilised uuringud ja uudsed rakendused	01.01.2004	31.12.2006	Ilmo Sildos	Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut	44 393,03 EUR

Eesti Teadusinfosüsteem

Jaan Aarik

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Jaan Aarik

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