Jacek Rabkowski

https://www.etis.ee/CV/Jacek_Rabkowski/est
21.05.1975
jacek.rabkowski@ee.pw.edu.pl

Teenistuskäik

Töökohad ja ametid
01.01.2014–...   
Professor at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
01.03.2015–31.12.2016   
Tallinna Tehnikaülikool, Energeetikateaduskond, Elektrotehnika instituut, Teadur (0,50)
01.01.2011–31.12.2013   
Guest Researcher/Visiting Professor at Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Stockholm, Sweden
01.01.2010–31.12.2010   
Post-Doc scholarship at Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Stockholm, Sweden
01.01.2005–31.12.2014   
Assistant Professor at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
01.01.2004–31.12.2005   
Research Assistant at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
 
 
Haridustee
2014–2014   
D.Sc. degree based on selected publications titled “Silicon carbide power devices: features, control, applications in power electronics”
2000–2000   
M.Sc. Eng., Warsaw University of Technology, Faculty of Electrical Engineering, Automatic and Computer Engineering
2000–2005   
PhD degree, Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics based on the thesis " Analysis of parallel operation three-phase PWM current source converters"
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
2014−...   
Associate Editor in International Journal of Electronics and Telecommunications
2014−...   
Reviewer : IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics, IEEE Transactions on Industrial Informatics, IEEE Transactions on Electron Devices, Polish Electrotechnical Review and Archives of Electrical Engineering.
2012−...   
Chairmain of the joint IEL/PELS Chapter in IEEE Poland Section
2014−2014   
Guest Co-Editor-in-Chief of IEEE Transactions on Power Electronics Special Issue on Wide Bandgap Power Devices and Their Applications
 
 
Lisainfo
Research projects:

In Poland:
1. Research project MNiSzW nr N510 005 31/0318, Transformerless uni- and bidirectional power electronics converters with Z-source inverter for distributed power systems, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2006-2008, participant
2. Ordered research project MNiSzW -Nr PBZ-MEiN-6/2/T02/200, agreement between Institute of Control and Industrial Electronics, Warsaw University of Technology and Institute of Electron Materials Technology Nr 16/ES/G 007/T02/2007, Construction and tests of prototype power electronics subsystem with silicon carbide devices, 2007-2010, participant
3. Research project MNiSZW Nr N510 382 635, Research and construction of power electronics converters with uni- and bidirectional power switches with SiC, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2008-2010, project leader
4. Industrial project 04232/C.ZR8-6/208"Development and application of three-level active power filter with high dynamics of compensation ",Institute of Control and Industrial Electronics, Warsaw University of Technology and MEDCOM sp. z o.o., 2008-2009, participant
5. Research project MNiSW, System connecting PV pannels with supply grid with the use of a new quasi Z-source inverters, Institute of Control and Industrial Electronics, Warsaw University of Technology and Electrotechnical Institute, 2008-2010, participant
6. Research project MNiSW, Development and optimization bidirectional modular converter connecting two DC circuits with high voltage gain, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2010-13, participant
7. Research project NCN, Research and development of the optimisation multicriterial procedures modern AC/DC converters especially for renewable/distributed power systems, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-15, participant
8. FNP project VENTURES, Complex power electronics system with SiC devices in renewable energy sources application, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-2015, participant
9. NCBiR industrial project INNOTECH (HI-TECH), Development of the functional modules for power electronics converters with SiC power devices, MEDCOM sp. z o.o. and Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-14, project leader at ISEP PW
10. NCBiR industrial project INNOTECH (HI-TECH), Series of high-frequency bipolar supplies based on Silicon Carbide devices with increased immunity to disturbances and voltage dips, TRUMPF Huettinger and Institute of Control and Industrial Electronics, Warsaw University of Technology, 2014-16, participant

International:
1. Research project (Vinnova, Sweden), Hög Temperatur Elektroniska system helt i kiselkarbid (SiC) för elektriska fordon / HighTemperatureElectronic systemsentirely built insilicon carbide (SiC) forelectricvehicles, Acreo AB/ KTH Royal Institute of Technology, Linkoping Technical University, 2008-2011, participant
2. Industrial project in the frame of SiC Power Center (co-financed byVinnova, Sweden), Undersökning av olika kiselkarbidkomponenttyper i två olika strömriktare för tåg/ Investigation of differentSiCcomponent typesintwodifferentconvertersfor trains, KTH Royal Institute of Technology/ Bombardier Transportation Sweden AB, 2011-13, participant
3. Industrial project in the frame of SiC Power Center (co-financed by Vinnova, Sweden), Overdrive, 2012-01291, KTH Royal Institute of Technology/ Volvo Cars AB, 2012-13, participant
4. Industrial project in the frame of SiC Power Center (co-financed by Vinnova, Sweden), Energieffektiv industriell karftomvandlare med kiselkarbid/ Energy efficientindustrialpowerconverter withSiC, 2012-03701, KTH Royal Institute of Technology/ Alstom Power Sweden AB, 2012-14, participant;

Kvalifikatsioon

Teaduskraadid
Jacek Rabkowski, doktorikraad, 2005, (juh) Roman Barlik, Analiza pracy równoległej trójfazowych przekształtników sieciowych PWM o wyjściu stałoprądowym (Analysis of parallel operation three-phase PWM current source converters), Warsaw University of Technology.
 
 
Teaduspreemiad ja tunnustused
2012, Jacek Rabkowski, Second degree award in Contest of Prof. Mieczysław Pożaryskiego for the best paper published in journals of Polish Electricians Association (SEP)
2010, Jacek Rabkowski, PSE Operator award on the ENERGETAB 2010 exhibition „Best product in the area of electrical energy quality” for active power filter
2010, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
2010, Jacek Rabkowski, Laureat of the contest for scholarschip of the Center of Advanced Studies,Warsaw University of Technology
2008, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
2006, Jacek Rabkowski, Distinction in Contest of Prof. Mieczysław Pożaryskiego for the best paper published in journals of Polish Electricians Association (SEP)
2002, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.12. Protsessitehnoloogia ja materjaliteadus; CERCS KLASSIFIKAATOR: T150 Materjalitehnoloogia
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.17 Energeetikaalased uuringud; CERCS KLASSIFIKAATOR: T140 Energeetika
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.8. Elektrotehnika ja elektroonika; CERCS KLASSIFIKAATOR: T170 Elektroonika
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.8. Elektrotehnika ja elektroonika; CERCS KLASSIFIKAATOR: T190 Elektrotehnika
 
 
Lisainfo
Tutorials:
1. SiC Converters and Gate Drives, International SiC Power Applications Workshop ISiCPEAW 2013, 10-11 June 2013, Stockholm, Sweden
2. Silicon Carbide Power Electronics, European Conference on Power Electronics and Applications EPE 2013, 3-5 September, Lille, France
3. High-Efficiency Silicon Carbide Power Electronics, Applied Power Electronics Conference, Fort Worth, USA, 2014
4. Power Conversion with SiC Devices and Power Modules,European Conference on Power Electronics and Applications EPE 2014, 26-28 August, Lappeeranta, Finland

Lõppenud projektid

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
3.1.
2017
Rabkowski, Jacek; Sak, Tomasz; Strzelecki, Ryszard; Grabarek, Maciej. (2017). SiC-based T-type modules for multi-pulse inverter with coupled inductors. 2017 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), 4-6 April 2017 Cadiz, Spain.. IEEE, 568−572.10.1109/CPE.2017.7915234.
3.1.
2017
Zdanowski, Mariusz; Kozdroj, Kamil; Rabkowski, Jacek. (2017). High-frequency isolated DC-DC converter with GaN HEMTs. 2017 Progress in Applied Electrical Engineering (PAEE), 5-30 June 2017, Koscielisko, Poland.. IEEE, 1−6.10.1109/PAEE.2017.8009023.
1.1.
2016
Zdanowski, M.; Peftitsis, D.; Piasecki, S.; Rabkowski, J. (2016). On the design process of a 6 kVA quasi-Z-inverter employing SiC power devices. IEEE Transactions on Power Electronics, 30 (11), 7499−7508.10.1109/TPEL.2016.2527100.
1.1.
2016
Sadik, Diane-Perle; Colmenares, Juan; Tolstoy, Georg; Peftitsis, Dimosthenis; Bakowski, Mietek; Rabkowski, Jacek; Nee, Hans-Peter (2016). Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors. IEEE Transactions on Industrial Electronics, 63 (4), 1995−2004.10.1109/TIE.2015.2506628.
1.1.
2016
Peftitsis, D.; Rabkowski, J. (2016). Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview. IEEE Transactions on Power Electronics, 31 (10), 7194−7213.10.1109/TPEL.2015.2510425.
3.1.
2016
Chub, A.; Zdanowski, M.; Blinov, A.;Rabkowski, J. (2016). Evaluation of GaN HEMTs for High-Voltage Stage of Isolated DC-DC Converters. CPE_POWERENG’2016 - Joint conference of the 10th edition of CPE (the International Conference on Compatibility and Power Electronics) and the 6th edition of POWERENG (International Conference on Power Engineering, Energy and Electrical Drives). IEEE, 375−379.
1.1.
2015
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Sadik, D.; Tolstoy, G.; Nee, H.-P. (2015). High-Efficiency 312-kVA Three-Phase Inverter using Parallel Connection of Silicon Carbide MOSFET Power Modules. IEEE Transactions on Industry Applications, 51 (6), 4664−4676.10.1109/TIA.2015.2456422.
1.1.
2015
Rabkowski, J.; Barlik, R. (2015). Experimental evaluation of GaN Gate Injection Transistors. Przeglad Elektrotechniczny, 91 (3), 9−12.10.15199/48.2015.03.03.
3.1.
2015
Chub, A.; Rabkowski, J.; Blinov, A.; Vinnikov, D. (2015). Study on Power Losses of the Full Soft-Switching Current-Fed DC/DC Converter with Si and GaN Devices. Proc. 41st Annual Conference of the IEEE Industrial Electronics Society (IECON2015). IEEE, 13−18.
3.1.
2015
Rabkowski, J.; Platek, T. (2015). Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction. Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe). Geneva , Switzerland: IEEE, P.1−P.10.
3.1.
2015
Pisecki, S.; Rabkowski, J. (2015). Experimental Investigations on the Grid-connected AC/DC Converter Based on Three-phase SiC MOSFET Module. Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe). Geneva , Switzerland: IEEE, P.1−P.10.
1.1.
2014
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2014). Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations. IEEE Transactions on Power Electronics, 29 (10), 5129−5135.10.1109/TPEL.2014.2320360.
1.1.
2014
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2014). Dual-Function Gate Driver for a Power Module with SiC Junction Field-Effect Transistors. IEEE Transactions on Power Electronics, 29 (5), 2367 −2379 .10.1109/TPEL.2013.2277616.
1.1.
2014
Tolstoy, G.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P.; Palmer, P.R. (2014). Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors. IEEE Transactions on Power Electronics, 29 (5), 2408 −2417 .10.1109/TPEL.2013.2274331.
1.1.
2014
Lim, J.-K.; Peftitsis, D.; Rabkowski, J.; Bakowski, M.; Nee, H.P. (2014). Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs. IEEE Transactions on Power Electronics, 29 (5), 2180−2191.10.1109/TPEL.2013.2281084.
1.1.
2014
Zdanowski, M.; Kostov, K.; Rąbkowski, J.; Barlik, R.; Nee, H.P. (2014). Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors. IEEE Transactions on Power Electronics, 29 (5), 2492 −2499 .10.1109/TPEL.2013.2281990.
1.1.
2014
Rąbkowski, J.; Peftitsis, D.; Nee, H.-P. (2014). Parallel-operation of Discrete SiC BJTs in a 6kW/250kHz dc/dc Boost Converter. IEEE Transactions on Power Electronics, 29 (5), 2482−2491 .
3.1.
2014
Nee, H.P.; Rabkowski, J.; Peftitsis, D. (2014). Muliti-chip circuit designs for silicon carbide power electronics. Proceedings: 8th International Conference on Integrated Power Systems (CIPS). Nürnberg, Germany: IEEE, 1−10.
3.1.
2014
Rąbkowski, J.; Peftitsis, D.; Nee, H.P. (2014). Recent advances in power semiconductor technology. In: Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications (69−106).. John Wiley & Sons Ltd.
3.1.
2014
Rabkowski, J.; Piasecki, S.; Kazmierkowski, M.P. (2014). Design of a three-phase AC/DC converter with paralleled SiC MOSFETs. Proceedings: 2014 16th International Power Electronics and Motion Control Conference and Exposition (PEMC). IEEE, 533−539.10.1109/EPEPEMC.2014.6980548.
3.1.
2014
Sadik, D.-P.; Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Rabkowski, J.; Nee, H.-P. (2014). Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection. Proceedings: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 1−10.10.1109/EPE.2014.6910789.
3.1.
2014
Colmenares, J.; Peftitsis, D.; Nee, H.-P.; Rabkowski, J. (2014). Switching performance of parallel-connected power modules with SiC MOSFETs. Proceedings: 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA). IEEE, 3712−3717.10.1109/IPEC.2014.6870032.
3.1.
2014
Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Sadik, D.; Nee, H.-P.; Rabkowski, J. (2014). High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications. Proceedings: 2014 IEEE of Energy Conversion Congress and Exposition (ECCE). IEEE, 468−474.10.1109/ECCE.2014.6953431.
3.1.
2014
Chub, A.; Husev, O.; Zakis, J.; Rabkowski, J. (2014). Switched-Capacitor Current-Fed Quasi-Z-Source Inverter. Proc. of: The 14th Biennial Baltic Electronics Conference. IEEE, 229−232.
3.1.
2014
Zdanowski, M.; Rabkowski, J.; Barlik, R. (2014). Design issues of the high-frequency interleaved DC/DC boost converter with Silicon Carbide MOSFETs. Proceedings: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 1−10.10.1109/EPE.2014.6910918.
1.1.
2013
Rąbkowski, J. (2013). A Current-Source Concept for Fast and Efficient Driving of Silicon Carbide Transistors. Archives of Electrical Engineering, 62 (2), 333−343.10.2478/aee-2013-0026.
1.1.
2013
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2013). Design Steps Towards a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5 %. IEEE Transactions on Power Electronics, 49 (4), 1589−1598 .10.1109/TIA.2013.2258132.
1.1.
2013
Peftitsis, D.; Barbuske, R.; Rabkowski, J.; Lutz, J.; Nee, H.P. (2013). Challenges Regarding Parallel-Connection of SiC-JFETs. IEEE Transactions on Power Electronics, 28 (3), 1449−1463 .10.1109/TPEL.2012.2206611.
1.1.
2013
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Self-Powered Gate Driver for Normally-ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply. IEEE Transactions on Power Electronics, 28 (3), 1488−1501.
1.2.
2013
Schöner, A.; Bakowski, M.; Malhan, R.K.; Takeuchi, Y.; Sugiyama, N.; Rabkowski, J.; Peftitsis, D.; Ranstad, P.; Nee, H.-P. (2013). Fabrication of a SiC Double Gate Vertical Channel JFET and It's Application in Power Electronics. Electrochemical Society Transactions, 50 (3), 45−52.10.1149/05003.0045ecst.
3.1.
2013
Rabkowski, J.; Peftitsis, D.; Bakowski, M.; Nee, H.-P. (2013). Evaluation of the drive circuit for a dual gate trench SiC JFET. In: SILICON CARBIDE AND RELATED MATERIALS 2012 (946−949).. Trans Tech Publications Ltd. (Materials Science Forum ).
3.1.
2013
Lim, J.-K.; Peftitsis, D.; Rabkowski, J.; Bakowski, M.; Nee, H.-P. (2013). Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs. Lebedev, AA; Davydov, SY; Ivanov, PA; Levinshtein, ME. SILICON CARBIDE AND RELATED MATERIALS 2012 (1098−1102).. Trans Tech Publications Ltd. (Materials Science Forum ).
3.1.
2013
Nee, H.-P.; Rąbkowski, J.; Peftitsis, D.; Tolstoy, G.; Colmenares, J.; Sadik, D.; Bakowski, M.; Lim, J.-K.; Antonopoulos, A.; Angquist, L.; Zdanowski, M. (2013). High-Efficiency Power Conversion Using Silicon Carbide Power Electronics. Materials Science Forum, 778-780: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). IEEE, 1083−1088.10.4028/www.scientific.net/MSF.778-780.1083.
3.1.
2013
Rabkowski, J.; Peftitsis, D.; Zdanowski, M.; Nee, H.-P. (2013). A 6kW, 200 kHz Boost Converter with Parallel-Connected SiC Bipolar Transistors. Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 1991−1998.10.1109/APEC.2013.6520568.
3.1.
2013
Kostov, K.; Rabkowski, J.; Nee, H.-P. (2013). Conducted EMI from SiC BJT Boost Converter and its Dependence on the Output Voltage, Current, and Heatsink Connection. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 1125−1130.10.1109/ECCE-Asia.2013.6579249.
3.1.
2013
Tolstoy, G.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P.; Palmer, P.R. (2013). Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 728 −735.10.1109/ECCE-Asia.2013.6579182.
3.1.
2013
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Design Considerations for a Self-Powered Gate Driver for Normally-ON SiC Junction Field-Effect Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 251−257.10.1109/ECCE-Asia.2013.6579105.
3.1.
2013
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 245−250.10.1109/ECCE-Asia.2013.6579104.
3.1.
2013
Rabkowski, J.; Zdanowski, M.; Barlik, R. (2013). Concept of the Bridge Leg with Mixed Normally-ON & Normally-OFF SiC JFETs. 8th International Conference – Workshop Compatibility and Power Electronics CPE 2013. IEEE, 286−291.10.1109/CPE.2013.6601171.
3.1.
2013
Sadik, D.; Peftitsis, D.; Colmenares, J.; Rabkowski, J.; Nee, H.-P. (2013). Experimental investigations of static and transient current sharing of parallel connected Silicon Carbide MOSFETs. European Power Electronics Conference 2013, ECCE Europe 2013. IEEE, 1−10.10.1109/EPE.2013.6634432.
3.1.
2013
Piasecki, S.; Cantarellas, A.M.; Rabkowski, J.; Rodriguez, P. (2013). Design of AC-DC Power Converters with LCL + Tuned Trap Line Filter Using Si IGBT and SiC MOSFET Modules. IEEE Industrial Electronics Conference IECON 2013. IEEE, 5957−5962.10.1109/IECON.2013.6700112.
3.1.
2013
Piasecki, S.; Rabkowski, J.; Wrona, G.; Platek, T. (2013). SiC-based Support Converter for passive front-end AC drive applications. IEEE Industrial Electronics Conference IECON 2013. Vienna, Austria: IEEE, 6010−6015.10.1109/IECON.2013.6700121.
1.1.
2012
Peftitsis, D.; Tolstoy, G.; Antonopoulos, A.; Rabkowski, J.; Lim, J.-K.; Bakowski, M.; Ängquist, L.; Nee, H.P. (2012). High-Power Modular Multilevel Converters with SiC JFETs. IEEE Transactions on Power Electronics, 27 (1), 28−36.
1.1.
2012
Rabkowski, J.; Tolstoy, G.; Peftitsis, D.; Nee, H.-P. (2012). Low-Loss High–Performance Base-Drive Unit for SiC BJTs. IEEE Transactions on Power Electronics, 27 (5), 2633−2643.
1.1.
2012
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2012). Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated. IEEE Industrial Electronics Magazine, 6 (2), 17−26.10.1109/MIE.2012.2193291.
3.1.
2012
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2012). Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%. Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 1536−1543.10.1109/APEC.2012.6166024.
3.1.
2012
Peftitsis, D.; Lim, J.-K.; Rabkowski, J.; Tolstoy, G.; Nee, H.-P. (2012). Experimental Comparison of Different Gate-Driver Configurations for Parallel-Connection of Normally-on SiC JFETs. 1: 7th International Power Electronics and Motion Control Conference (IPEMC). Harbin, China: IEEE, 16−22.10.1109/IPEMC.2012.6258832.
3.1.
2012
Zdanowski, M.; Rabkowski, J.; Kostov, K.; Nee, H.-P. (2012). The Role of the Parasitic Capacitance of the Inductor in Boost Converters with Normally-On SiC JFETs. 3: 7th International Power Electronics and Motion Control Conference (IPEMC). 1842 −1847.
3.1.
2012
Rabkowski, J.; Zdanowski, M.; Peftitsis, D.; Nee, H.-P. (2012). A Simple High-Performance Low-Loss Current-Source Driver for SiC Bipolar Transistors. 7th International Power Electronics and Motion Control Conference - ECCE Asia. IEEE, 222−228.10.1109/IPEMC.2012.6258834.
3.1.
2012
Zdanowski, M.; Rabkowski, J.; Kostov, K.; Barlik, R.; Nee, H.-P. (2012). Design and Evaluation of Reduced Self-Capacitance Inductor for Fast-Switching SiC BJT dc/dc Converters. 15th International Power Electronics and Motion Control Conference (EPE/PEMC). IEEE, DS1a.4-1−DS1a.4-7.10.1109/EPEPEMC.2012.6397194.
3.4.
2012
Rabkowski, J.; Peftitsis, D.; Bakowski, M.; Nee, H.-P. (2012). Switching performance evaluation of a 15mm2 double gate trench SiC JFET. European Conference on Silicon Carbide and Related Materials 2012. St. Petersburg, Russia,.
25.04.2018

Jacek Rabkowski

https://www.etis.ee/CV/Jacek_Rabkowski/eng
21.05.1975
jacek.rabkowski@ee.pw.edu.pl

Career

Institutions and positions
01.01.2014–...   
Professor at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
01.03.2015–31.12.2016   
Tallinn University of Technology , Faculty of Power Engineering, Department of Electrical Engineering, Research Scientist (0,50)
01.01.2011–31.12.2013   
Guest Researcher/Visiting Professor at Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Stockholm, Sweden
01.01.2010–31.12.2010   
Post-Doc scholarship at Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Stockholm, Sweden
01.01.2005–31.12.2014   
Assistant Professor at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
01.01.2004–31.12.2005   
Research Assistant at Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics
 
 
Education
2014–2014   
D.Sc. degree based on selected publications titled “Silicon carbide power devices: features, control, applications in power electronics”
2000–2000   
M.Sc. Eng., Warsaw University of Technology, Faculty of Electrical Engineering, Automatic and Computer Engineering
2000–2005   
PhD degree, Warsaw University of Technology, Faculty of Electrical Engineering, Institute of Control and Industrial Electronics based on the thesis " Analysis of parallel operation three-phase PWM current source converters"
 
 
R&D related managerial and administrative work
2014−...   
Associate Editor in International Journal of Electronics and Telecommunications
2014−...   
Reviewer : IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics, IEEE Transactions on Industrial Informatics, IEEE Transactions on Electron Devices, Polish Electrotechnical Review and Archives of Electrical Engineering.
2012−...   
Chairmain of the joint IEL/PELS Chapter in IEEE Poland Section
2014−2014   
Guest Co-Editor-in-Chief of IEEE Transactions on Power Electronics Special Issue on Wide Bandgap Power Devices and Their Applications
 
 
Additional information
Research projects:

In Poland:
1. Research project MNiSzW nr N510 005 31/0318, Transformerless uni- and bidirectional power electronics converters with Z-source inverter for distributed power systems, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2006-2008, participant
2. Ordered research project MNiSzW -Nr PBZ-MEiN-6/2/T02/200, agreement between Institute of Control and Industrial Electronics, Warsaw University of Technology and Institute of Electron Materials Technology Nr 16/ES/G 007/T02/2007, Construction and tests of prototype power electronics subsystem with silicon carbide devices, 2007-2010, participant
3. Research project MNiSZW Nr N510 382 635, Research and construction of power electronics converters with uni- and bidirectional power switches with SiC, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2008-2010, project leader
4. Industrial project 04232/C.ZR8-6/208"Development and application of three-level active power filter with high dynamics of compensation ",Institute of Control and Industrial Electronics, Warsaw University of Technology and MEDCOM sp. z o.o., 2008-2009, participant
5. Research project MNiSW, System connecting PV pannels with supply grid with the use of a new quasi Z-source inverters, Institute of Control and Industrial Electronics, Warsaw University of Technology and Electrotechnical Institute, 2008-2010, participant
6. Research project MNiSW, Development and optimization bidirectional modular converter connecting two DC circuits with high voltage gain, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2010-13, participant
7. Research project NCN, Research and development of the optimisation multicriterial procedures modern AC/DC converters especially for renewable/distributed power systems, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-15, participant
8. FNP project VENTURES, Complex power electronics system with SiC devices in renewable energy sources application, Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-2015, participant
9. NCBiR industrial project INNOTECH (HI-TECH), Development of the functional modules for power electronics converters with SiC power devices, MEDCOM sp. z o.o. and Institute of Control and Industrial Electronics, Warsaw University of Technology, 2013-14, project leader at ISEP PW
10. NCBiR industrial project INNOTECH (HI-TECH), Series of high-frequency bipolar supplies based on Silicon Carbide devices with increased immunity to disturbances and voltage dips, TRUMPF Huettinger and Institute of Control and Industrial Electronics, Warsaw University of Technology, 2014-16, participant

International:
1. Research project (Vinnova, Sweden), Hög Temperatur Elektroniska system helt i kiselkarbid (SiC) för elektriska fordon / HighTemperatureElectronic systemsentirely built insilicon carbide (SiC) forelectricvehicles, Acreo AB/ KTH Royal Institute of Technology, Linkoping Technical University, 2008-2011, participant
2. Industrial project in the frame of SiC Power Center (co-financed byVinnova, Sweden), Undersökning av olika kiselkarbidkomponenttyper i två olika strömriktare för tåg/ Investigation of differentSiCcomponent typesintwodifferentconvertersfor trains, KTH Royal Institute of Technology/ Bombardier Transportation Sweden AB, 2011-13, participant
3. Industrial project in the frame of SiC Power Center (co-financed by Vinnova, Sweden), Overdrive, 2012-01291, KTH Royal Institute of Technology/ Volvo Cars AB, 2012-13, participant
4. Industrial project in the frame of SiC Power Center (co-financed by Vinnova, Sweden), Energieffektiv industriell karftomvandlare med kiselkarbid/ Energy efficientindustrialpowerconverter withSiC, 2012-03701, KTH Royal Institute of Technology/ Alstom Power Sweden AB, 2012-14, participant;

Qualifications

Academic degrees
Jacek Rabkowski, Doctor's Degree, 2005, (sup) Roman Barlik, Analiza pracy równoległej trójfazowych przekształtników sieciowych PWM o wyjściu stałoprądowym (Analysis of parallel operation three-phase PWM current source converters), Warsaw University of Technology.
 
 
Honours & awards
2012, Jacek Rabkowski, Second degree award in Contest of Prof. Mieczysław Pożaryskiego for the best paper published in journals of Polish Electricians Association (SEP)
2010, Jacek Rabkowski, PSE Operator award on the ENERGETAB 2010 exhibition „Best product in the area of electrical energy quality” for active power filter
2010, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
2010, Jacek Rabkowski, Laureat of the contest for scholarschip of the Center of Advanced Studies,Warsaw University of Technology
2008, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
2006, Jacek Rabkowski, Distinction in Contest of Prof. Mieczysław Pożaryskiego for the best paper published in journals of Polish Electricians Association (SEP)
2002, Jacek Rabkowski, Team award of Warsaw University of Technology Rector
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.12. Process Technology and Materials Science; CERCS CLASSIFICATION: T150 Material technology
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.17 Energetic Research; CERCS CLASSIFICATION: T140 Energy research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.8. Electrical Engineering and Electronics; CERCS CLASSIFICATION: T170 Electronics
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.8. Electrical Engineering and Electronics; CERCS CLASSIFICATION: T190 Electrical engineering
 
 
Additional information
Tutorials:
1. SiC Converters and Gate Drives, International SiC Power Applications Workshop ISiCPEAW 2013, 10-11 June 2013, Stockholm, Sweden
2. Silicon Carbide Power Electronics, European Conference on Power Electronics and Applications EPE 2013, 3-5 September, Lille, France
3. High-Efficiency Silicon Carbide Power Electronics, Applied Power Electronics Conference, Fort Worth, USA, 2014
4. Power Conversion with SiC Devices and Power Modules,European Conference on Power Electronics and Applications EPE 2014, 26-28 August, Lappeeranta, Finland

Completed projects

Supervised dissertations

Publications

Category
Year
Publication
 
3.1.
2017
Rabkowski, Jacek; Sak, Tomasz; Strzelecki, Ryszard; Grabarek, Maciej. (2017). SiC-based T-type modules for multi-pulse inverter with coupled inductors. 2017 11th IEEE International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), 4-6 April 2017 Cadiz, Spain.. IEEE, 568−572.10.1109/CPE.2017.7915234.
3.1.
2017
Zdanowski, Mariusz; Kozdroj, Kamil; Rabkowski, Jacek. (2017). High-frequency isolated DC-DC converter with GaN HEMTs. 2017 Progress in Applied Electrical Engineering (PAEE), 5-30 June 2017, Koscielisko, Poland.. IEEE, 1−6.10.1109/PAEE.2017.8009023.
1.1.
2016
Zdanowski, M.; Peftitsis, D.; Piasecki, S.; Rabkowski, J. (2016). On the design process of a 6 kVA quasi-Z-inverter employing SiC power devices. IEEE Transactions on Power Electronics, 30 (11), 7499−7508.10.1109/TPEL.2016.2527100.
1.1.
2016
Sadik, Diane-Perle; Colmenares, Juan; Tolstoy, Georg; Peftitsis, Dimosthenis; Bakowski, Mietek; Rabkowski, Jacek; Nee, Hans-Peter (2016). Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors. IEEE Transactions on Industrial Electronics, 63 (4), 1995−2004.10.1109/TIE.2015.2506628.
1.1.
2016
Peftitsis, D.; Rabkowski, J. (2016). Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview. IEEE Transactions on Power Electronics, 31 (10), 7194−7213.10.1109/TPEL.2015.2510425.
3.1.
2016
Chub, A.; Zdanowski, M.; Blinov, A.;Rabkowski, J. (2016). Evaluation of GaN HEMTs for High-Voltage Stage of Isolated DC-DC Converters. CPE_POWERENG’2016 - Joint conference of the 10th edition of CPE (the International Conference on Compatibility and Power Electronics) and the 6th edition of POWERENG (International Conference on Power Engineering, Energy and Electrical Drives). IEEE, 375−379.
1.1.
2015
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Sadik, D.; Tolstoy, G.; Nee, H.-P. (2015). High-Efficiency 312-kVA Three-Phase Inverter using Parallel Connection of Silicon Carbide MOSFET Power Modules. IEEE Transactions on Industry Applications, 51 (6), 4664−4676.10.1109/TIA.2015.2456422.
1.1.
2015
Rabkowski, J.; Barlik, R. (2015). Experimental evaluation of GaN Gate Injection Transistors. Przeglad Elektrotechniczny, 91 (3), 9−12.10.15199/48.2015.03.03.
3.1.
2015
Chub, A.; Rabkowski, J.; Blinov, A.; Vinnikov, D. (2015). Study on Power Losses of the Full Soft-Switching Current-Fed DC/DC Converter with Si and GaN Devices. Proc. 41st Annual Conference of the IEEE Industrial Electronics Society (IECON2015). IEEE, 13−18.
3.1.
2015
Rabkowski, J.; Platek, T. (2015). Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction. Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe). Geneva , Switzerland: IEEE, P.1−P.10.
3.1.
2015
Pisecki, S.; Rabkowski, J. (2015). Experimental Investigations on the Grid-connected AC/DC Converter Based on Three-phase SiC MOSFET Module. Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe). Geneva , Switzerland: IEEE, P.1−P.10.
1.1.
2014
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2014). Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations. IEEE Transactions on Power Electronics, 29 (10), 5129−5135.10.1109/TPEL.2014.2320360.
1.1.
2014
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2014). Dual-Function Gate Driver for a Power Module with SiC Junction Field-Effect Transistors. IEEE Transactions on Power Electronics, 29 (5), 2367 −2379 .10.1109/TPEL.2013.2277616.
1.1.
2014
Tolstoy, G.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P.; Palmer, P.R. (2014). Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors. IEEE Transactions on Power Electronics, 29 (5), 2408 −2417 .10.1109/TPEL.2013.2274331.
1.1.
2014
Lim, J.-K.; Peftitsis, D.; Rabkowski, J.; Bakowski, M.; Nee, H.P. (2014). Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs. IEEE Transactions on Power Electronics, 29 (5), 2180−2191.10.1109/TPEL.2013.2281084.
1.1.
2014
Zdanowski, M.; Kostov, K.; Rąbkowski, J.; Barlik, R.; Nee, H.P. (2014). Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors. IEEE Transactions on Power Electronics, 29 (5), 2492 −2499 .10.1109/TPEL.2013.2281990.
1.1.
2014
Rąbkowski, J.; Peftitsis, D.; Nee, H.-P. (2014). Parallel-operation of Discrete SiC BJTs in a 6kW/250kHz dc/dc Boost Converter. IEEE Transactions on Power Electronics, 29 (5), 2482−2491 .
3.1.
2014
Nee, H.P.; Rabkowski, J.; Peftitsis, D. (2014). Muliti-chip circuit designs for silicon carbide power electronics. Proceedings: 8th International Conference on Integrated Power Systems (CIPS). Nürnberg, Germany: IEEE, 1−10.
3.1.
2014
Rąbkowski, J.; Peftitsis, D.; Nee, H.P. (2014). Recent advances in power semiconductor technology. In: Power Electronics for Renewable Energy Systems, Transportation and Industrial Applications (69−106).. John Wiley & Sons Ltd.
3.1.
2014
Rabkowski, J.; Piasecki, S.; Kazmierkowski, M.P. (2014). Design of a three-phase AC/DC converter with paralleled SiC MOSFETs. Proceedings: 2014 16th International Power Electronics and Motion Control Conference and Exposition (PEMC). IEEE, 533−539.10.1109/EPEPEMC.2014.6980548.
3.1.
2014
Sadik, D.-P.; Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Rabkowski, J.; Nee, H.-P. (2014). Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection. Proceedings: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 1−10.10.1109/EPE.2014.6910789.
3.1.
2014
Colmenares, J.; Peftitsis, D.; Nee, H.-P.; Rabkowski, J. (2014). Switching performance of parallel-connected power modules with SiC MOSFETs. Proceedings: 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA). IEEE, 3712−3717.10.1109/IPEC.2014.6870032.
3.1.
2014
Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Sadik, D.; Nee, H.-P.; Rabkowski, J. (2014). High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications. Proceedings: 2014 IEEE of Energy Conversion Congress and Exposition (ECCE). IEEE, 468−474.10.1109/ECCE.2014.6953431.
3.1.
2014
Chub, A.; Husev, O.; Zakis, J.; Rabkowski, J. (2014). Switched-Capacitor Current-Fed Quasi-Z-Source Inverter. Proc. of: The 14th Biennial Baltic Electronics Conference. IEEE, 229−232.
3.1.
2014
Zdanowski, M.; Rabkowski, J.; Barlik, R. (2014). Design issues of the high-frequency interleaved DC/DC boost converter with Silicon Carbide MOSFETs. Proceedings: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 1−10.10.1109/EPE.2014.6910918.
1.1.
2013
Rąbkowski, J. (2013). A Current-Source Concept for Fast and Efficient Driving of Silicon Carbide Transistors. Archives of Electrical Engineering, 62 (2), 333−343.10.2478/aee-2013-0026.
1.1.
2013
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2013). Design Steps Towards a 40-kVA SiC JFET Inverter With Natural-Convection Cooling and an Efficiency Exceeding 99.5 %. IEEE Transactions on Power Electronics, 49 (4), 1589−1598 .10.1109/TIA.2013.2258132.
1.1.
2013
Peftitsis, D.; Barbuske, R.; Rabkowski, J.; Lutz, J.; Nee, H.P. (2013). Challenges Regarding Parallel-Connection of SiC-JFETs. IEEE Transactions on Power Electronics, 28 (3), 1449−1463 .10.1109/TPEL.2012.2206611.
1.1.
2013
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Self-Powered Gate Driver for Normally-ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply. IEEE Transactions on Power Electronics, 28 (3), 1488−1501.
1.2.
2013
Schöner, A.; Bakowski, M.; Malhan, R.K.; Takeuchi, Y.; Sugiyama, N.; Rabkowski, J.; Peftitsis, D.; Ranstad, P.; Nee, H.-P. (2013). Fabrication of a SiC Double Gate Vertical Channel JFET and It's Application in Power Electronics. Electrochemical Society Transactions, 50 (3), 45−52.10.1149/05003.0045ecst.
3.1.
2013
Rabkowski, J.; Peftitsis, D.; Bakowski, M.; Nee, H.-P. (2013). Evaluation of the drive circuit for a dual gate trench SiC JFET. In: SILICON CARBIDE AND RELATED MATERIALS 2012 (946−949).. Trans Tech Publications Ltd. (Materials Science Forum ).
3.1.
2013
Lim, J.-K.; Peftitsis, D.; Rabkowski, J.; Bakowski, M.; Nee, H.-P. (2013). Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs. Lebedev, AA; Davydov, SY; Ivanov, PA; Levinshtein, ME. SILICON CARBIDE AND RELATED MATERIALS 2012 (1098−1102).. Trans Tech Publications Ltd. (Materials Science Forum ).
3.1.
2013
Nee, H.-P.; Rąbkowski, J.; Peftitsis, D.; Tolstoy, G.; Colmenares, J.; Sadik, D.; Bakowski, M.; Lim, J.-K.; Antonopoulos, A.; Angquist, L.; Zdanowski, M. (2013). High-Efficiency Power Conversion Using Silicon Carbide Power Electronics. Materials Science Forum, 778-780: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). IEEE, 1083−1088.10.4028/www.scientific.net/MSF.778-780.1083.
3.1.
2013
Rabkowski, J.; Peftitsis, D.; Zdanowski, M.; Nee, H.-P. (2013). A 6kW, 200 kHz Boost Converter with Parallel-Connected SiC Bipolar Transistors. Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 1991−1998.10.1109/APEC.2013.6520568.
3.1.
2013
Kostov, K.; Rabkowski, J.; Nee, H.-P. (2013). Conducted EMI from SiC BJT Boost Converter and its Dependence on the Output Voltage, Current, and Heatsink Connection. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 1125−1130.10.1109/ECCE-Asia.2013.6579249.
3.1.
2013
Tolstoy, G.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P.; Palmer, P.R. (2013). Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 728 −735.10.1109/ECCE-Asia.2013.6579182.
3.1.
2013
Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Design Considerations for a Self-Powered Gate Driver for Normally-ON SiC Junction Field-Effect Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 251−257.10.1109/ECCE-Asia.2013.6579105.
3.1.
2013
Colmenares, J.; Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 245−250.10.1109/ECCE-Asia.2013.6579104.
3.1.
2013
Rabkowski, J.; Zdanowski, M.; Barlik, R. (2013). Concept of the Bridge Leg with Mixed Normally-ON & Normally-OFF SiC JFETs. 8th International Conference – Workshop Compatibility and Power Electronics CPE 2013. IEEE, 286−291.10.1109/CPE.2013.6601171.
3.1.
2013
Sadik, D.; Peftitsis, D.; Colmenares, J.; Rabkowski, J.; Nee, H.-P. (2013). Experimental investigations of static and transient current sharing of parallel connected Silicon Carbide MOSFETs. European Power Electronics Conference 2013, ECCE Europe 2013. IEEE, 1−10.10.1109/EPE.2013.6634432.
3.1.
2013
Piasecki, S.; Cantarellas, A.M.; Rabkowski, J.; Rodriguez, P. (2013). Design of AC-DC Power Converters with LCL + Tuned Trap Line Filter Using Si IGBT and SiC MOSFET Modules. IEEE Industrial Electronics Conference IECON 2013. IEEE, 5957−5962.10.1109/IECON.2013.6700112.
3.1.
2013
Piasecki, S.; Rabkowski, J.; Wrona, G.; Platek, T. (2013). SiC-based Support Converter for passive front-end AC drive applications. IEEE Industrial Electronics Conference IECON 2013. Vienna, Austria: IEEE, 6010−6015.10.1109/IECON.2013.6700121.
1.1.
2012
Peftitsis, D.; Tolstoy, G.; Antonopoulos, A.; Rabkowski, J.; Lim, J.-K.; Bakowski, M.; Ängquist, L.; Nee, H.P. (2012). High-Power Modular Multilevel Converters with SiC JFETs. IEEE Transactions on Power Electronics, 27 (1), 28−36.
1.1.
2012
Rabkowski, J.; Tolstoy, G.; Peftitsis, D.; Nee, H.-P. (2012). Low-Loss High–Performance Base-Drive Unit for SiC BJTs. IEEE Transactions on Power Electronics, 27 (5), 2633−2643.
1.1.
2012
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2012). Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated. IEEE Industrial Electronics Magazine, 6 (2), 17−26.10.1109/MIE.2012.2193291.
3.1.
2012
Rabkowski, J.; Peftitsis, D.; Nee, H.-P. (2012). Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%. Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 1536−1543.10.1109/APEC.2012.6166024.
3.1.
2012
Peftitsis, D.; Lim, J.-K.; Rabkowski, J.; Tolstoy, G.; Nee, H.-P. (2012). Experimental Comparison of Different Gate-Driver Configurations for Parallel-Connection of Normally-on SiC JFETs. 1: 7th International Power Electronics and Motion Control Conference (IPEMC). Harbin, China: IEEE, 16−22.10.1109/IPEMC.2012.6258832.
3.1.
2012
Zdanowski, M.; Rabkowski, J.; Kostov, K.; Nee, H.-P. (2012). The Role of the Parasitic Capacitance of the Inductor in Boost Converters with Normally-On SiC JFETs. 3: 7th International Power Electronics and Motion Control Conference (IPEMC). 1842 −1847.
3.1.
2012
Rabkowski, J.; Zdanowski, M.; Peftitsis, D.; Nee, H.-P. (2012). A Simple High-Performance Low-Loss Current-Source Driver for SiC Bipolar Transistors. 7th International Power Electronics and Motion Control Conference - ECCE Asia. IEEE, 222−228.10.1109/IPEMC.2012.6258834.
3.1.
2012
Zdanowski, M.; Rabkowski, J.; Kostov, K.; Barlik, R.; Nee, H.-P. (2012). Design and Evaluation of Reduced Self-Capacitance Inductor for Fast-Switching SiC BJT dc/dc Converters. 15th International Power Electronics and Motion Control Conference (EPE/PEMC). IEEE, DS1a.4-1−DS1a.4-7.10.1109/EPEPEMC.2012.6397194.
3.4.
2012
Rabkowski, J.; Peftitsis, D.; Bakowski, M.; Nee, H.-P. (2012). Switching performance evaluation of a 15mm2 double gate trench SiC JFET. European Conference on Silicon Carbide and Related Materials 2012. St. Petersburg, Russia,.
25.04.2018
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ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
PUTPUT744Pehmelülitusega galvaaniliselt isoleeritud alalispingemuundurite uus perekond 01.01.201531.12.2016Andrii BlinovTallinna Tehnikaülikool, Energeetikateaduskond114 000,00 EUR