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Olen nõus

Natalja Sleptšuk

https://www.etis.ee/CV/Natalja_Sleptšuk/est
27.08.1980
56630427
natalja.sleptsuk@ttu.ee
01.01.2000−05.06.2007 Kuznetsova, Natalja

Teenistuskäik

Töökohad ja ametid
01.01.2019–06.01.2020   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Vanemteadur (0,60)
01.01.2017–31.12.2018   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Vanemteadur (0,80)
01.09.2012–31.12.2016   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Kognitiivelektroonika teaduslabor, Vanemteadur (0,80)
01.09.2005–31.08.2012   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool, Teadur (1,00)
01.01.2003–31.08.2005   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Insener (1,00)
01.01.2001–31.12.2003   
Tehnik elektroonikainstituudis
 
 
Haridustee
2005–2011   
Doktorantuur Tallinna Tehnikaülikoolis (lõpetamine 2011)
2003–2004   
Magistrantuur Tallinna Tehnikaülikoolis (lõpetamine 2004)
1998–2003   
Bakalaureuse ōpingus Tallinna Tahnikaülikoolis 1998- 2003 (lõpetamine 2003)
1992–1998   
Tallinna Pelguranna Keskkool (lōpetamine 1998)
1986–1992   
Tallinna põhikool N 38
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
2004−...   
Infortehnoloogia teaduskonna ERASMUSe koordinaator
EL vōrgustiku projekti ESTIA (Women in Science) elektroonikainstituudi poolne koordinaator
2018−2020   
Erasmus+ Strategic Partnership, ICM 2018
 
 
Lisainfo
IEE0720 Lab on chip lecture
IEE0110 Nanoelectronics and materials characterization lecture

Kvalifikatsioon

Teaduskraadid
Natalja Sleptšuk, doktorikraad, 2011, (juh) Toomas Rang; Oleg Korolkov, Investigation of the Intermediate Layer in the Metal-Silicon Carbide Contact Obtained by Diffusion Welding (Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimine), Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut.
Natalja Sleptšuk, magistrikraad (teaduskraad), 2004, (juh) Oleg Korolkov, Kahe Metalliseerimismeetodi - pihustamine ja difusioonkeevitus - vōrdlus rakendatuna SiC Schottky kontaktidele, Tallinna Tehnikaülikool.
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.8. Elektrotehnika ja elektroonika; CERCS KLASSIFIKAATOR: T170 Elektroonika
 
 
Lisainfo
MSci
Tallinna Tehnikaülikool 2004
Ph.D
Tallinna Tehnikaülikool 2011
2015 aprill - 2015 august praktikatööd tudengitele Prantsusmaal, ENI Val de Loire ülikoolist (Erasmus)
2013 aprill - 2013 juuli - praktikatööd tudengitele Prantsusmaal, ENI Val de Loire ülikoolist (Erasmus)
2014 aprill - 2014 juuli praktikatööd tudengitele Prantsusmaal, ENI Val de Loire ülikoolist (Erasmus)
2016 aprill - 2016 august praktikatööd tudengitele Prantsusmaal, ENI Val de Loire ülikoolist (Erasmus)
Magistritöö juhendamine "The dependence of reverse recovery time on barrier capacitance and series-on resistance in SiC Schottky diodes" - Aleksander Veher (kaitstud Juuni 2017)
2018 aprill - 2018 august praktikatööd tudengitele Prantsusmaal, ENI Val de Loire ülikoolist (Erasmus)
Bakalaureusetöö juhendamine "HELISIGNAALI VISUAALNE ESITAMINE LED-RIBA JA SPEKTRI ANALÜSAATORI BAASIL" - Igor Kozlovski (2019)

Lõppenud projektid

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2019
Abdalla, A.; Bereznev, S.; Spalatu, N.; Volobujeva, O.; Sleptsuk, N.; Danilson, M. (2019). Pulsed laser deposition of Zn(O,Se) layers in nitrogen background pressure. Scientific Reports, 9, Article number: 17443 (1-9)). DOI: 10.1038/s41598-019-54008-1.
1.1.
2019
Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T. (2019). Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons. Semiconductors, 53 (7), 975−978. DOI: 10.1134/S1063782619070133.
1.2.
2019
Rang, T.; Toompuu, J.; Слепчук, Н.; Лебедев, A. A.; Козловский, В. B.; Корольков, O. M. (2019). Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами. Физика и техника полупроводников (991−994). Российская академия наук. (7). DOI: 10.21883/FTP.2019.07.47879.9089.
3.1.
2019
Sleptsuk, N.; Lebedev, A.; Eliseyev, I.; Korolkov, O.; Toompuu, J.; Land, R.; Mikli, V.; Zubov, A.; Rang, T. (2019). Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application. In: K. Karjust, J. Kübarsepp, T. Otto, I. Hussainova (Ed.). Modern Materials and Manufacturing 2019 (185−190). Trans Tech Publications Ltd. (Key Engineering Materials; 799). DOI: 10.4028/www.scientific.net/KEM.799.185.
1.1.
2018
Korolkov, Oleg; Land, Raul, Toompuu, Jana; Sleptšuk, Natalja; Rang, Toomas (2018). SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack. Materials Science Forum , 924, 862−865. DOI: 10.4028/www.scientific.net/MSF.924.862.
3.1.
2018
Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, Toomas (2018). The measurement and tuning of SiC Diode Voltage Doubler represented as diffusion-welded stack. Proceedings of Baltic Electronics Conference BEC2018: 16th Biennial Baltic Electronics Conference BEC2018, Tallinn, Estonia, October 8-10, 2018. Ed. Ants Koel, Peeter Ellervee. Tallinn: IEEE Catalog Number: CFP18BEC-USB. DOI: 10.1109/BEC.2018.8600963.
5.2.
2018
Sleptsuk, Natalja; Land, Raul; Toompuu, Jana; Lebedev, Alexander: Davydov, Valery; Eliseyev, Ilya; Kalinina, Evgenia; Korolkov, Oleg; Rang, Toomas (2018). Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications. In: .The 6th International Symposium on Graphene Devices (ISGD-6) -2018. ePosters.
1.1.
2017
A.A.Lebedev, K.S.Davydovskaya, V.V.Kozlovski, O.Korolkov, N.Sleptsuk, J.Toompuu (2017). Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 Mev Electrons. Materials Science Forum , 897, 447−450.10.4028/www.scientific.net/MSF.897.447.
1.1.
2017
Korolkov,Oleg; Kozlovski,Vitali; Lebedev,Alexander; Land,Raul; Sleptsuk,Natalja; Toompuu,Jana; Rang,Toomas (2017). SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack. Materials Science Forum , 897, 697−700. DOI: 10.4028/www.scientific.net/MSF.897.697.
3.1.
2017
Veher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, Toomas (2017). The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes. In: D. O. Nortwood, J. de Hosson, T. Rang, C.A Brebbia (Ed.). WIT Transactions on Engineering Sciences. Material Characterization 2017 (15−22). Great Britain: WIT Press.10.2495/MC170021.
1.1.
2016
Korolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land Raul; Rang, Toomas (2016). High-voltage diffusion-welded stacks on the basis of SiC Schottky diodes. In: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio (Ed.). Silicon Carbide and Related Materials/Materials Science Forum (790−794). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.790.
3.1.
2016
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2016). Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis. Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang, Peeter Ellervee. Tallinn: TTU Press, 35−38. (IEEE Catalo Number: CFP16BEC-USB).10.1109/BEC.2016.7743722.
3.1.
2016
Sleptsuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, Toomas (2016). Comparative Characteristics of Diffusion-Welded High-Voltage Stacks and Connected in Series Schottky diodes. Baltic Electronics Conference; The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang; Peeter Ellervee. TTU Press, 39−42. (IEEE Catalog Number: CFP16BEC-USB). DOI: 10.1109/BEC.2016.7743723.
5.2.
2016
Tamas Pardy; Natalja Sleptsuk; Mart Min; Jaan Ojarand; Triin Lakspere; Kaia Palm (2016). Rapid electrochemical impedance spectroscopy for protein detection in Lab-on-a-Chip devices. In: ePosters. Lab-on-a-Chip & Microfluidics 2016. ePosters.
3.1.
2015
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2015). Analysis of deep level spectrum in GaAs p+pinn+ structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (283−294). Great Britain: WIT Press. DOI: 10.2495/MC150261.
3.1.
2014
Toompuu, J.; Korolkov, O.; Sleptsuk, N.; Rang, T. (2014). Investigation of Deep Level Centers in i- and n-Layers of GaAs pin-Diodes. Proceedings of the 14th Biennial Baltic Electronics Conference: BEC2014 2014 14th Biennial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn: IEEE, 25−28.
1.1.
2012
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, Valdek (2012). The Specificity of Solid-Phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-Welded Contacts to Semiconductor Devices. Elektronika ir Elektrotechnika, 18 (8), 45−48.
1.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. Materials Science Forum , 717-720, 275−278.
1.1.
2012
Ivanov, P.; Grekhov, I.; Potapov, A.; Kon'kov, O.; Il'inskaya, N.; Samsonova, T.; Korolkov, O.; Sleptsuk, N. (2012). Leakage Currents in 4H-SiC JBS Diodes. Semiconductors, 46 (3), 411−415.10.1134/S106378261203013X.
1.2.
2012
Ivanov, Pavel; Grekhov, Ilya; Potapov, Alexander; Kon’kov, O.; Il’inskaya, N.; Samsonova, Tatyana; Korolkov, Oleg; Sleptsuk, Natalja (2012). Токи утечки в 4H-SiC-диодах Шоттки с интегрированной шоттки (p−n- структурой). Физика и техника полупроводников (411−415).. Российская академия наук. (3).
2.2.
2012
Sleptsuk, N. (2012). Intermediate layer in the metal-silicon carbide contact. Lambert Academic Publishing.
3.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Experimental study of surface distorsions in silicon carbide caused by diffusion welding. Proceedings of the 13th Biennial Baltic Electronics Conference: 2012 13th Binnial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn, Estonia; IEEE Catalog Number: CFP12BEC-PRT: TTU Press, 53−56.
1.1.
2011
Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Diffusion Welded Contacts and Related Art Applied to Semiconductor Materials. Electronics and Electrical Engineering, 67−70.
1.1.
2011
Ivanov, Pavel; Korolkov, Oleg; Samsonova, Tat'yana; Sleptsuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, Toomas (2011). DLTS Measurements on 4H-SiC JBS-diodes with Boron Implanted Local p-n Junctions. Materials Science Forum , 679-680, 409−412.
1.2.
2011
Ivanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korol'kov, Oleg; Sleptsuk, Natalja (2011). Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии. Физика и техника полупроводников (1358−1362).. Российская академия наук. (10).
2.3.
2011
Sleptšuk, Natalja (2011). Investigation of the Intermediate Layer in the Metal-Silicon Carbide Contact Obtained by Diffusion Welding. (Tallinn University of Technology). Tallinn, Estonia: TTU Press.
5.1.
2011
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. 2011 International Conference on Silicon Carbide and Related Materials Abstract Book: ICSCRM2011 Cleveland Ohio, USA, September 11-16, 2011. Cleveland, USA: Trans Tech Publications Ltd, 356.
1.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Rang, Toomas (2010). Investigation of p-i-n GaAs Structures by DLTS Method. Electronics and Electrical Engineering, 51−54.
3.1.
2010
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2010). Comparison of individual SiC JBS chips and JBS stacks in series. Proceedings of the 12th Biennial Baltic Electronic Conference BEC2010: IEEE 2010 12th Biennial Baltic Electronics Conference. Ed. T. Rang, P. Ellervee, M. Min. IEEE, 81−84.
3.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Vojtovich, Viktor; Rang, Toomas (2010). GaAs Based Diffusion Welded High Voltage Diode Stacks. In: IEEE International Conference on Semiconductor Electronics CD-ROM Proceedings (4−7).. Malaysia: IEEE Operations Center.
3.2.
2010
Rang, Toomas; Sleptšuk, natalja (2010). New InterDisciplinary master Program in Communicative Electronics at Tallinn University of Technology. 5TH INTERNATIONAL CONFERENCE ON INTERDISCIPLINARITY IN EDUCATION ICIE’10: NEW HIGHER EDUCATION PROGRAMS. Proceedings: The 5th International Confernce on Interdisciplinarity in Education ICIE'10; June 17-19, 2010, Tallinn, Estonia. Ed. Prof. Dr. Eng. Maria G. Ioannides and Dr. Fotini Ioanidou. Greece; Published by the National Technical University of Athens; School of Electrical and Computer Engineering: Atena, 187−190.
3.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of subcontact layers in SiC after diffusion welding. In: Suzuki, A.; Okumura, H.; Kimoto, T.; Fuyuki, T.; Fukuda, K.; Nishizawa, S. (Ed.). Silicon Carbide and Related Materials 2007 (647−650).. Trans Tech Publications Ltd.
3.1.
2008
Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T. (2008). Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding. 2008 International Baltic Electronics Conference BEC2008: Baltic Electronics Conference 2008, Tallinn, Oct. 6-8. Ed. Toomas Rang. Tallinn, Estonia, IEEE copyright: Tallinn University of Technology Press, 91−94.
1.1.
2007
Korolkov, O., Kuznetsova, N., Rang, T., Syrkin, A., Dmitriev, V (2007). The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts. In: Wright, N., Johnson, C.M., Vassilevski, K., Nikitina, I., Horsfall, A. (Ed.). Silicon Carbide and Related materials (737−740).. Switzerland: Trans Tech Publications Ltd.
3.1.
2006
N. Kuznetsova, O. Korolokov, T. Rang, M. Pikkov (2006). The basic Schottky parameters for combined diffusion welded and sputter metal contacts. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T. Rang. Tallinn: IEEE Operations Center, 47−50.
3.1.
2006
Korolkov, O.; Kuznetsova, N.; Rang, T. (2006). Clamp mode package diffusion welded power SiC Schottky diodes. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T.Rang. Tallinn: IEEE Operations Center, 55−58.
3.4.
2006
Kuznetsova, Natalja (2006). Laboratory experiences, goals and methods. 2nd International Conference on Interdisciplinarity in education ICIE 2006. Athens, Greece ,.
1.1.
2004
Korolkov, O.; Ruut, J.; Kuznetsova, N.; Rang, T. (2004). The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In: R. Madar, J. Camassel, E. Blanquet (Ed.). Silicon Carbide and Related Materials 2003 (857−860).. Trans Tech Publications Ltd. (Materials Science Forum; 457-460 ).
3.1.
2004
Korolkov, O.; Ljutov, J.; Kuznetsova, N.; Ruut, J.; Rang, T. (2004). Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts top- and n-type SiC. BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Ed. Rang, T. Tallinn: Tallinn University of Technology, 51−53.
7.02.2020

Natalja Sleptšuk

https://www.etis.ee/CV/Natalja_Sleptšuk/eng
27.08.1980
56630427
natalja.sleptsuk@ttu.ee
01.01.2000−05.06.2007 Kuznetsova, Natalja

Career

Institutions and positions
01.01.2019–06.01.2020   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Senior Researcher (0,60)
01.01.2017–31.12.2018   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Senior Researcher (0,80)
01.09.2012–31.12.2016   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Baselab for Cognitive Electronics Research, Senior Researcher (0,80)
01.09.2005–31.08.2012   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Chair of Electronics Design, Researcher (1,00)
01.01.2003–31.08.2005   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Engineer at the Department of Electronics (1,00)
01.01.2001–31.12.2003   
Technician at the Department of Electronics
 
 
Education
2005–2011   
PhD studies
2003–2004   
MSci studies at TUT
1998–2003   
Bachelor studies at TUT 1999- 2003
1992–1998   
Tallinn Pelguranna Secondary School 1999
1986–1992   
Tallinn school N 38
 
 
R&D related managerial and administrative work
2004−...   
Coordinator from the side of Information Technology Faculty of ERASMUS
Coordinator from the side of Department of Electronics of EU ESTIA Network project " Women in Science"
2018−2020   
Erasmus+ Strategic Partnership, ICM 2018
 
 
Additional information
IEE0720 Lab on chip lecture
IEE0110 Nanoelectronics and materials characterization lecture

Qualifications

Academic degrees
Natalja Sleptšuk, Doctor's Degree, 2011, (sup) Toomas Rang; Oleg Korolkov, Investigation of the Intermediate Layer in the Metal-Silicon Carbide Contact Obtained by Diffusion Welding, Tallinn University of Technology School of Information Technologies, Thomas Johann Seebeck Department of Electronics.
Natalja Sleptšuk, Research Master's Degree, 2004, (sup) Oleg Korolkov, Kahe Metalliseerimismeetodi - pihustamine ja difusioonkeevitus - vōrdlus rakendatuna SiC Schottky kontaktidele (Kahe Metalliseerimismeetodi - pihustamine ja difusioonkeevitus - vōrdlus rakendatuna SiC Schottky kontaktidele), Tallinn University of Technology.
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.8. Electrical Engineering and Electronics; CERCS CLASSIFICATION: T170 Electronics
 
 
Additional information
MSci
Tallinn University of Technology 2004
Ph.D.
Tallinn University of Technology 2011
Aprill 2015 - August 2015 - practice for ths students from France, ENI Val de Loire. (Erasmus)
Aprill 2013 - July 2013 - practice for ths students from France, ENI Val de Loire. (Erasmus)
Aprill 2014 - July 2014 - practice for ths students from France, ENI Val de Loire. (Erasmus)
April2016 - August 2016 - practice for students from France, ENI Val de Loire (Erasmus)
Supervision of Master thesis of "The dependence of reverse recovery time on barrier capacitance and series-on resistance in SiC Schottky diodes" - by Aleksander Veher (defended June 2017)
April 2018 - August 2018 - practice for ths students from France, ENI Val de Loire. (Erasmus)
supervision of the Bachelor work " Visual presentation of the audio signal using LED-strip and spectrum analyzer" - Igor Kozlovski (2019)

Completed projects

Publications

Category
Year
Publication
 
1.1.
2019
Abdalla, A.; Bereznev, S.; Spalatu, N.; Volobujeva, O.; Sleptsuk, N.; Danilson, M. (2019). Pulsed laser deposition of Zn(O,Se) layers in nitrogen background pressure. Scientific Reports, 9, Article number: 17443 (1-9)). DOI: 10.1038/s41598-019-54008-1.
1.1.
2019
Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T. (2019). Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons. Semiconductors, 53 (7), 975−978. DOI: 10.1134/S1063782619070133.
1.2.
2019
Rang, T.; Toompuu, J.; Слепчук, Н.; Лебедев, A. A.; Козловский, В. B.; Корольков, O. M. (2019). Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами. Физика и техника полупроводников (991−994). Российская академия наук. (7). DOI: 10.21883/FTP.2019.07.47879.9089.
3.1.
2019
Sleptsuk, N.; Lebedev, A.; Eliseyev, I.; Korolkov, O.; Toompuu, J.; Land, R.; Mikli, V.; Zubov, A.; Rang, T. (2019). Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application. In: K. Karjust, J. Kübarsepp, T. Otto, I. Hussainova (Ed.). Modern Materials and Manufacturing 2019 (185−190). Trans Tech Publications Ltd. (Key Engineering Materials; 799). DOI: 10.4028/www.scientific.net/KEM.799.185.
1.1.
2018
Korolkov, Oleg; Land, Raul, Toompuu, Jana; Sleptšuk, Natalja; Rang, Toomas (2018). SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack. Materials Science Forum , 924, 862−865. DOI: 10.4028/www.scientific.net/MSF.924.862.
3.1.
2018
Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, Toomas (2018). The measurement and tuning of SiC Diode Voltage Doubler represented as diffusion-welded stack. Proceedings of Baltic Electronics Conference BEC2018: 16th Biennial Baltic Electronics Conference BEC2018, Tallinn, Estonia, October 8-10, 2018. Ed. Ants Koel, Peeter Ellervee. Tallinn: IEEE Catalog Number: CFP18BEC-USB. DOI: 10.1109/BEC.2018.8600963.
5.2.
2018
Sleptsuk, Natalja; Land, Raul; Toompuu, Jana; Lebedev, Alexander: Davydov, Valery; Eliseyev, Ilya; Kalinina, Evgenia; Korolkov, Oleg; Rang, Toomas (2018). Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications. In: .The 6th International Symposium on Graphene Devices (ISGD-6) -2018. ePosters.
1.1.
2017
A.A.Lebedev, K.S.Davydovskaya, V.V.Kozlovski, O.Korolkov, N.Sleptsuk, J.Toompuu (2017). Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 Mev Electrons. Materials Science Forum , 897, 447−450.10.4028/www.scientific.net/MSF.897.447.
1.1.
2017
Korolkov,Oleg; Kozlovski,Vitali; Lebedev,Alexander; Land,Raul; Sleptsuk,Natalja; Toompuu,Jana; Rang,Toomas (2017). SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack. Materials Science Forum , 897, 697−700. DOI: 10.4028/www.scientific.net/MSF.897.697.
3.1.
2017
Veher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, Toomas (2017). The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes. In: D. O. Nortwood, J. de Hosson, T. Rang, C.A Brebbia (Ed.). WIT Transactions on Engineering Sciences. Material Characterization 2017 (15−22). Great Britain: WIT Press.10.2495/MC170021.
1.1.
2016
Korolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land Raul; Rang, Toomas (2016). High-voltage diffusion-welded stacks on the basis of SiC Schottky diodes. In: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio (Ed.). Silicon Carbide and Related Materials/Materials Science Forum (790−794). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.790.
3.1.
2016
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2016). Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis. Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang, Peeter Ellervee. Tallinn: TTU Press, 35−38. (IEEE Catalo Number: CFP16BEC-USB).10.1109/BEC.2016.7743722.
3.1.
2016
Sleptsuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, Toomas (2016). Comparative Characteristics of Diffusion-Welded High-Voltage Stacks and Connected in Series Schottky diodes. Baltic Electronics Conference; The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang; Peeter Ellervee. TTU Press, 39−42. (IEEE Catalog Number: CFP16BEC-USB). DOI: 10.1109/BEC.2016.7743723.
5.2.
2016
Tamas Pardy; Natalja Sleptsuk; Mart Min; Jaan Ojarand; Triin Lakspere; Kaia Palm (2016). Rapid electrochemical impedance spectroscopy for protein detection in Lab-on-a-Chip devices. In: ePosters. Lab-on-a-Chip & Microfluidics 2016. ePosters.
3.1.
2015
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2015). Analysis of deep level spectrum in GaAs p+pinn+ structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (283−294). Great Britain: WIT Press. DOI: 10.2495/MC150261.
3.1.
2014
Toompuu, J.; Korolkov, O.; Sleptsuk, N.; Rang, T. (2014). Investigation of Deep Level Centers in i- and n-Layers of GaAs pin-Diodes. Proceedings of the 14th Biennial Baltic Electronics Conference: BEC2014 2014 14th Biennial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn: IEEE, 25−28.
1.1.
2012
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, Valdek (2012). The Specificity of Solid-Phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-Welded Contacts to Semiconductor Devices. Elektronika ir Elektrotechnika, 18 (8), 45−48.
1.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. Materials Science Forum , 717-720, 275−278.
1.1.
2012
Ivanov, P.; Grekhov, I.; Potapov, A.; Kon'kov, O.; Il'inskaya, N.; Samsonova, T.; Korolkov, O.; Sleptsuk, N. (2012). Leakage Currents in 4H-SiC JBS Diodes. Semiconductors, 46 (3), 411−415.10.1134/S106378261203013X.
1.2.
2012
Ivanov, Pavel; Grekhov, Ilya; Potapov, Alexander; Kon’kov, O.; Il’inskaya, N.; Samsonova, Tatyana; Korolkov, Oleg; Sleptsuk, Natalja (2012). Токи утечки в 4H-SiC-диодах Шоттки с интегрированной шоттки (p−n- структурой). Физика и техника полупроводников (411−415).. Российская академия наук. (3).
2.2.
2012
Sleptsuk, N. (2012). Intermediate layer in the metal-silicon carbide contact. Lambert Academic Publishing.
3.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Experimental study of surface distorsions in silicon carbide caused by diffusion welding. Proceedings of the 13th Biennial Baltic Electronics Conference: 2012 13th Binnial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn, Estonia; IEEE Catalog Number: CFP12BEC-PRT: TTU Press, 53−56.
1.1.
2011
Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Diffusion Welded Contacts and Related Art Applied to Semiconductor Materials. Electronics and Electrical Engineering, 67−70.
1.1.
2011
Ivanov, Pavel; Korolkov, Oleg; Samsonova, Tat'yana; Sleptsuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, Toomas (2011). DLTS Measurements on 4H-SiC JBS-diodes with Boron Implanted Local p-n Junctions. Materials Science Forum , 679-680, 409−412.
1.2.
2011
Ivanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korol'kov, Oleg; Sleptsuk, Natalja (2011). Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии. Физика и техника полупроводников (1358−1362).. Российская академия наук. (10).
2.3.
2011
Sleptšuk, Natalja (2011). Investigation of the Intermediate Layer in the Metal-Silicon Carbide Contact Obtained by Diffusion Welding. (Tallinn University of Technology). Tallinn, Estonia: TTU Press.
5.1.
2011
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. 2011 International Conference on Silicon Carbide and Related Materials Abstract Book: ICSCRM2011 Cleveland Ohio, USA, September 11-16, 2011. Cleveland, USA: Trans Tech Publications Ltd, 356.
1.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Rang, Toomas (2010). Investigation of p-i-n GaAs Structures by DLTS Method. Electronics and Electrical Engineering, 51−54.
3.1.
2010
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2010). Comparison of individual SiC JBS chips and JBS stacks in series. Proceedings of the 12th Biennial Baltic Electronic Conference BEC2010: IEEE 2010 12th Biennial Baltic Electronics Conference. Ed. T. Rang, P. Ellervee, M. Min. IEEE, 81−84.
3.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Vojtovich, Viktor; Rang, Toomas (2010). GaAs Based Diffusion Welded High Voltage Diode Stacks. In: IEEE International Conference on Semiconductor Electronics CD-ROM Proceedings (4−7).. Malaysia: IEEE Operations Center.
3.2.
2010
Rang, Toomas; Sleptšuk, natalja (2010). New InterDisciplinary master Program in Communicative Electronics at Tallinn University of Technology. 5TH INTERNATIONAL CONFERENCE ON INTERDISCIPLINARITY IN EDUCATION ICIE’10: NEW HIGHER EDUCATION PROGRAMS. Proceedings: The 5th International Confernce on Interdisciplinarity in Education ICIE'10; June 17-19, 2010, Tallinn, Estonia. Ed. Prof. Dr. Eng. Maria G. Ioannides and Dr. Fotini Ioanidou. Greece; Published by the National Technical University of Athens; School of Electrical and Computer Engineering: Atena, 187−190.
3.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of subcontact layers in SiC after diffusion welding. In: Suzuki, A.; Okumura, H.; Kimoto, T.; Fuyuki, T.; Fukuda, K.; Nishizawa, S. (Ed.). Silicon Carbide and Related Materials 2007 (647−650).. Trans Tech Publications Ltd.
3.1.
2008
Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T. (2008). Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding. 2008 International Baltic Electronics Conference BEC2008: Baltic Electronics Conference 2008, Tallinn, Oct. 6-8. Ed. Toomas Rang. Tallinn, Estonia, IEEE copyright: Tallinn University of Technology Press, 91−94.
1.1.
2007
Korolkov, O., Kuznetsova, N., Rang, T., Syrkin, A., Dmitriev, V (2007). The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts. In: Wright, N., Johnson, C.M., Vassilevski, K., Nikitina, I., Horsfall, A. (Ed.). Silicon Carbide and Related materials (737−740).. Switzerland: Trans Tech Publications Ltd.
3.1.
2006
N. Kuznetsova, O. Korolokov, T. Rang, M. Pikkov (2006). The basic Schottky parameters for combined diffusion welded and sputter metal contacts. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T. Rang. Tallinn: IEEE Operations Center, 47−50.
3.1.
2006
Korolkov, O.; Kuznetsova, N.; Rang, T. (2006). Clamp mode package diffusion welded power SiC Schottky diodes. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T.Rang. Tallinn: IEEE Operations Center, 55−58.
3.4.
2006
Kuznetsova, Natalja (2006). Laboratory experiences, goals and methods. 2nd International Conference on Interdisciplinarity in education ICIE 2006. Athens, Greece ,.
1.1.
2004
Korolkov, O.; Ruut, J.; Kuznetsova, N.; Rang, T. (2004). The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In: R. Madar, J. Camassel, E. Blanquet (Ed.). Silicon Carbide and Related Materials 2003 (857−860).. Trans Tech Publications Ltd. (Materials Science Forum; 457-460 ).
3.1.
2004
Korolkov, O.; Ljutov, J.; Kuznetsova, N.; Ruut, J.; Rang, T. (2004). Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts top- and n-type SiC. BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Ed. Rang, T. Tallinn: Tallinn University of Technology, 51−53.
7.02.2020

Otsi projekti

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Uus Frascati (2015)
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ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
SFSF0140061s12Energiasäästlikud elektroonikasüsteemid01.01.201231.12.2013Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond468 120,00 EUR
MUUAR10126Energiasüsteemi talitluse optimeerimine muutuvkoormuste tasakaalustamiseks01.11.201031.10.2013Toomas Rang; Arvo OtsTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektrotehnika instituut, Elektriajamite ja elektrivarustuse õppetool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektroenergeetika instituut, Energiasüsteemide õppetool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektrotehnika instituut, Elektrimasinate õppetool; Tallinna Tehnikaülikool, Mehaanikateaduskond, Soojustehnika instituut, Soojusenergeetika õppetool951 405,00 EUR
MUUVERT415ESTIA-EARTH ''To Sustain the Women's Careers as Academics, Researchers and Professionals in Engineering, Computers and Sciences''01.10.200830.09.2011Toomas Rang; Piia TintTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool; Tallinna Tehnikaülikool, Majandusteaduskond, Ärikorralduse instituut, Töökeskkonna ja -ohutuse õppetool595 360,01 EUR
IUTIUT19-11Impedants-spektroskoopia põhine objektide identifitseerimine ja juhtimine: signaalid, algoritmid, energiasäästlikud lahendused01.01.201431.12.2019Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut1 446 000,00 EUR
ETFETF8592Laia keelutsooniga materjalidel baseeruvad integreeritud Schottky ja heterosiirded: tehnoloogiad ja modelleerimine 01.01.201131.12.2014Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond44 160,00 EUR
ETFETF7183Laia keelutsooniga materjalidel pōhinevate pooljuhtstruktuuride kontaktid: üleminekuala kompositsioon ja morfoloogia ning modelleerimine01.01.200731.12.2010Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond30 064,04 EUR
PUT; PUT_OPPUT1435Laia keelutsooniga pooljuhtmaterjalidel põhinevad heterosiirded01.01.201728.02.2021Ants KoelTallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Kognitiivelektroonika teaduslabor175 112,00 EUR
ETFETF5917Metall-SiC kontaktkihi struktuuridefektide uurimine01.01.200431.12.2006Mart ViljusTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond13 495,74 EUR
SFSF0142737s06Missioonikriitiliste sardsüsteemide elektroonsed komponendid ja alamsüsteemid01.01.200631.12.2011Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond1 187 937,80 EUR
MUUÜLKAP44Sardsüsteemid ja komponendid (SARS)01.07.200630.06.2008Toomas RangTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool3 582 120,08 EUR
SFSF0141754s01Seire- ja andmehõivesüsteemid: elektroonsed komponendid, tehnoloogia, lülitused; mudelid, algoritmid, süsteemi-integratsiooni meetodid.01.01.200131.12.2005Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond387 847,83 EUR