See veebileht kasutab küpsiseid kasutaja sessiooni andmete hoidmiseks. Veebilehe kasutamisega nõustute ETISe kasutustingimustega. Loe rohkem
Olen nõus

Oleg Korolkov

https://www.etis.ee/CV/Oleg_Korolkov/est
3.08.1947
6202155
oleg.korolkov@ttu.ee

Teenistuskäik

Töökohad ja ametid
1971-1977 tehnololoog TEI-s
1977-1990 vanemteadur TEI-s
1990-1992 laborijuhataja TEI-s
1992-1997 Firma Diftehno tegevjuht
1997-1999 insener elektroonikainstituudis
01.01.2017–31.08.2019   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Vanemteadur (0,25)
01.04.2013–31.12.2016   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Kognitiivelektroonika teaduslabor, Vanemteadur (1,00)
01.01.2005–31.03.2013   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool, Vanemteadur (1,00)
01.04.1999–31.08.2004   
Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Teadur (1,00)
 
 
Haridustee
Tallinna 23 Keskkool 1954-1965
St. Petersburg Tehnikaülikool 1965-1971
Magistrantuur Tallinna Tehnikaülikoolis 1997-1998
Doktorantuur Tallinna Tehnikaülikoolis 1999-2002
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
-

Kvalifikatsioon

Teaduskraadid
Oleg Korolkov, doktorikraad, 2004, (juh) Toomas Rang, Al-kontaktide valmistamine pooljuht ränikarbiidile kasutades difusioonkeevituse meetodit, Tallinna Tehnikaülikool.
Oleg Korolkov, magistrikraad (teaduskraad), 1998, (juh) Toomas Rang, Investigation of Silicon Power Semiconductor Devices manufactured Using Diffusion Welding Technology, Tallinna Tehnikaülikool.
 
 
Teaduspreemiad ja tunnustused
0, Oleg Korolkov, ei ole
 
 
Lisainfo
MSci, E.E.
PhD, E.E.
Tallinna Tehnikaülikool 1998
Tallinna Tehnikaülikool 2004

Lõppenud projektid

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2019
Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T. (2019). Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons. Semiconductors, 53 (7), 975−978. DOI: 10.1134/S1063782619070133.
3.1.
2019
Sleptsuk, N.; Lebedev, A.; Eliseyev, I.; Korolkov, O.; Toompuu, J.; Land, R.; Mikli, V.; Zubov, A.; Rang, T. (2019). Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application. In: K. Karjust, J. Kübarsepp, T. Otto, I. Hussainova (Ed.). Modern Materials and Manufacturing 2019 (185−190). Trans Tech Publications Ltd. (Key Engineering Materials; 799). DOI: 10.4028/www.scientific.net/KEM.799.185.
1.1.
2018
Korolkov, Oleg; Land, Raul, Toompuu, Jana; Sleptšuk, Natalja; Rang, Toomas (2018). SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack. Materials Science Forum, 924, 862−865. DOI: 10.4028/www.scientific.net/MSF.924.862.
3.1.
2018
Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, Toomas (2018). The measurement and tuning of SiC Diode Voltage Doubler represented as diffusion-welded stack. Proceedings of Baltic Electronics Conference BEC2018: 16th Biennial Baltic Electronics Conference BEC2018, Tallinn, Estonia, October 8-10, 2018. Ed. Ants Koel, Peeter Ellervee. Tallinn: IEEE Catalog Number: CFP18BEC-USB. DOI: 10.1109/BEC.2018.8600963.
1.1.
2017
A.A.Lebedev, K.S.Davydovskaya, V.V.Kozlovski, O.Korolkov, N.Sleptsuk, J.Toompuu (2017). Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 Mev Electrons. Materials Science Forum, 897, 447−450. DOI: 10.4028/www.scientific.net/MSF.897.447.
1.1.
2017
Korolkov,Oleg; Kozlovski,Vitali; Lebedev,Alexander; Land,Raul; Sleptsuk,Natalja; Toompuu,Jana; Rang,Toomas (2017). SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack. Materials Science Forum, 897, 697−700. DOI: 10.4028/www.scientific.net/MSF.897.697.
3.1.
2017
Veher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, Toomas (2017). The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes. In: D. O. Nortwood, J. de Hosson, T. Rang, C.A Brebbia (Ed.). WIT Transactions on Engineering Sciences. Material Characterization 2017 (15−22). Great Britain: WIT Press.10.2495/MC170021.
1.1.
2016
Korolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land Raul; Rang, Toomas (2016). High-voltage diffusion-welded stacks on the basis of SiC Schottky diodes. In: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio (Ed.). Silicon Carbide and Related Materials/Materials Science Forum (790−794). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.790.
3.1.
2016
Sleptsuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, Toomas (2016). Comparative Characteristics of Diffusion-Welded High-Voltage Stacks and Connected in Series Schottky diodes. Baltic Electronics Conference; The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang; Peeter Ellervee. TTU Press, 39−42. (IEEE Catalog Number: CFP16BEC-USB). DOI: 10.1109/BEC.2016.7743723.
3.1.
2016
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2016). Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis. Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang, Peeter Ellervee. Tallinn: TTU Press, 35−38. (IEEE Catalo Number: CFP16BEC-USB).10.1109/BEC.2016.7743722.
3.1.
2015
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2015). Analysis of deep level spectrum in GaAs p+pinn+ structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (283−294). Great Britain: WIT Press. DOI: 10.2495/MC150261.
3.1.
2015
Shenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, Galina (2015). Polytypic heterojunctions for wide bandgap semiconductor structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (273−282). Great Britain: WIT Press. DOI: 10.2495/MC150251.
3.1.
2014
Toompuu, J.; Korolkov, O.; Sleptsuk, N.; Rang, T. (2014). Investigation of Deep Level Centers in i- and n-Layers of GaAs pin-Diodes. Proceedings of the 14th Biennial Baltic Electronics Conference: BEC2014 2014 14th Biennial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn: IEEE, 25−28.
1.1.
2013
Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2013). Analysis of Deep Level Centres in GaAs pin-Diode Structures. Electronics and Electrical Engineering, 19 (10), 95−98.
1.1.
2013
Mizsei, János; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, Toomas (2013). Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe. Materials Science Forum, 740-742, 677−680.
1.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. Materials Science Forum, 717-720, 275−278.
1.1.
2012
Ivanov, P.; Grekhov, I.; Potapov, A.; Kon'kov, O.; Il'inskaya, N.; Samsonova, T.; Korolkov, O.; Sleptsuk, N. (2012). Leakage Currents in 4H-SiC JBS Diodes. Semiconductors, 46 (3), 411−415.10.1134/S106378261203013X.
1.1.
2012
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, Valdek (2012). The Specificity of Solid-Phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-Welded Contacts to Semiconductor Devices. Elektronika ir Elektrotechnika, 18 (8), 45−48.
1.2.
2012
Ivanov, Pavel; Grekhov, Ilya; Potapov, Alexander; Kon’kov, O.; Il’inskaya, N.; Samsonova, Tatyana; Korolkov, Oleg; Sleptsuk, Natalja (2012). Токи утечки в 4H-SiC-диодах Шоттки с интегрированной шоттки (p−n- структурой). Физика и техника полупроводников (411−415).. Российская академия наук. (3).
1.2.
2012
Glazov, Aleksei; Kozlov, Vladimir; Korolkov, Oleg.; Muratikov, Kirill (2012). Анализ процессов распросттранения тепла в структурах импульсных силовых приборов вблизи плоскостей спая кремниевых пластин в высоковольтные "столбы". Материалы электронной техники, 2, 65−69.
3.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Experimental study of surface distorsions in silicon carbide caused by diffusion welding. Proceedings of the 13th Biennial Baltic Electronics Conference: 2012 13th Binnial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn, Estonia; IEEE Catalog Number: CFP12BEC-PRT: TTU Press, 53−56.
5.1.
2012
Mizsei, János; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2012). Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe. In: The 9th European Conference of Silicon Carbide and Related Materials. Abstract Book, St. Petersburg Russia; 2-6 Sept. 2012 (TuP40).. St. Petersburg: Trans Tech Publications Ltd.
1.1.
2011
Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Diffusion Welded Contacts and Related Art Applied to Semiconductor Materials. Electronics and Electrical Engineering, 67−70.
1.1.
2011
Ivanov, Pavel; Korolkov, Oleg; Samsonova, Tat'yana; Sleptsuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, Toomas (2011). DLTS Measurements on 4H-SiC JBS-diodes with Boron Implanted Local p-n Junctions. Materials Science Forum, 679-680, 409−412.
1.2.
2011
Ivanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korol'kov, Oleg; Sleptsuk, Natalja (2011). Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии. Физика и техника полупроводников (1358−1362).. Российская академия наук. (10).
5.1.
2011
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. 2011 International Conference on Silicon Carbide and Related Materials Abstract Book: ICSCRM2011 Cleveland Ohio, USA, September 11-16, 2011. Cleveland, USA: Trans Tech Publications Ltd, 356.
1.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Rang, Toomas (2010). Investigation of p-i-n GaAs Structures by DLTS Method. Electronics and Electrical Engineering, 51−54.
3.1.
2010
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2010). Comparison of individual SiC JBS chips and JBS stacks in series. Proceedings of the 12th Biennial Baltic Electronic Conference BEC2010: IEEE 2010 12th Biennial Baltic Electronics Conference. Ed. T. Rang, P. Ellervee, M. Min. IEEE, 81−84.
3.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Vojtovich, Viktor; Rang, Toomas (2010). GaAs Based Diffusion Welded High Voltage Diode Stacks. In: IEEE International Conference on Semiconductor Electronics CD-ROM Proceedings (4−7).. Malaysia: IEEE Operations Center.
1.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of Subcontact Layers in SiC After Diffusion Welding. Materials Science Forum, 600-603, 647−650.
3.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of subcontact layers in SiC after diffusion welding. In: Suzuki, A.; Okumura, H.; Kimoto, T.; Fuyuki, T.; Fukuda, K.; Nishizawa, S. (Ed.). Silicon Carbide and Related Materials 2007 (647−650).. Trans Tech Publications Ltd.
3.1.
2008
Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T. (2008). Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding. 2008 International Baltic Electronics Conference BEC2008: Baltic Electronics Conference 2008, Tallinn, Oct. 6-8. Ed. Toomas Rang. Tallinn, Estonia, IEEE copyright: Tallinn University of Technology Press, 91−94.
1.1.
2007
Korolkov, O., Kuznetsova, N., Rang, T., Syrkin, A., Dmitriev, V (2007). The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts. In: Wright, N., Johnson, C.M., Vassilevski, K., Nikitina, I., Horsfall, A. (Ed.). Silicon Carbide and Related materials (737−740).. Switzerland: Trans Tech Publications Ltd.
3.1.
2006
N. Kuznetsova, O. Korolokov, T. Rang, M. Pikkov (2006). The basic Schottky parameters for combined diffusion welded and sputter metal contacts. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T. Rang. Tallinn: IEEE Operations Center, 47−50.
3.1.
2006
Korolkov, O.; Kuznetsova, N.; Rang, T. (2006). Clamp mode package diffusion welded power SiC Schottky diodes. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T.Rang. Tallinn: IEEE Operations Center, 55−58.
3.1.
2006
Korolkov, O.; Rang, T.; Syrkin, A.; Dmitriev, V. (2006). Diffusion Welding Techniques for Power SiC Schottky Packaging. Silicon Carbide and Related materials: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, PA, SEP 18-23, 2005. Ed. Devaty, R.P.; Larkin, D.J.; Saddow, S.E. Switzerland: Trans Tech Publications Ltd, 919−922. (Materials Science Forum ; 527-529).
1.1.
2004
Korolkov, O.; Ruut, J.; Kuznetsova, N.; Rang, T. (2004). The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In: R. Madar, J. Camassel, E. Blanquet (Ed.). Silicon Carbide and Related Materials 2003 (857−860).. Trans Tech Publications Ltd. (Materials Science Forum; 457-460 ).
3.1.
2004
Korolkov, O.; Ljutov, J.; Kuznetsova, N.; Ruut, J.; Rang, T. (2004). Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts top- and n-type SiC. BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Ed. Rang, T. Tallinn: Tallinn University of Technology, 51−53.
1.1.
2000
Korolkov, O.; Rang, T (2000). Formation of large area Al contacts on 6H-and 4H-sic substrates. In: Silicon Carbide and Related Materials, Ecscrm2000 (603−606). Zurich-Uetikon: Trans Tech Publications Ltd.
3.4.
2000
Korolkov, O.; Rang, T. (2000). Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. BEC 2000, Oct. 8-11, 2000, Tallinn, Estonia. , 23−26.
1.3.
1999
"Rang, Toomas;Korolkov, Oleg;Pikkov, Mihhail" (1999). Metallization technologies for wide band-gap semiconductor substrates : (invited paper). Proceeding of the Estonian Academy of Sciences. Engineering (27−30).. TA kirjastus.
3.5.
1997
Korolkov, O.; Rang, T. (1997). Diffusion Welded Contacts for Silicon Semiconductor Devices. In: B. Michel, T. Winkler (Ed.). Micromaterials (120−123). . Dresden: ddp Publisher.
6.7.
1997
Velmre, Enn; Rang, Toomas; Udal, Andres; Korolkov, Oleg; Putting, Aiki; Koel, Ants (1997). Füüsikaliste mudelite väljatöötamine ränist ja ränikarbiidist pooljuhtseadiste numbriliseks modelleerimiseks = Development of physical models for use in silicon and silicon carbide device numerical modeling : aruanne aastail 1993-1996 Eesti Teadusfondi ... tööst nr. 568 : elektrotehnika. Tallinn: Tallinna Tehnikaülikool.

Tööstusomand

17.12.2019

Oleg Korolkov

https://www.etis.ee/CV/Oleg_Korolkov/eng
3.08.1947
6202155
oleg.korolkov@ttu.ee

Career

Institutions and positions
1971-1977 tehnologist at TEI
1977-1990 senior researcher at TEI
1990-1992 head of the laboratory at TEI
1992-1997 Managing director of Diftehno Ltd
1997-1999 engineer at the Department of Electronics, TUT
01.01.2017–31.08.2019   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Senior Researcher (0,25)
01.04.2013–31.12.2016   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Baselab for Cognitive Electronics Research, Senior Researcher (1,00)
01.01.2005–31.03.2013   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, Chair of Electronics Design, Senior Researcher (1,00)
01.04.1999–31.08.2004   
Tallinn University of Technology , School of Information Technologies, Thomas Johann Seebeck Department of Electronics, (1,00)
 
 
Education
Tallinn Secondary School No. 23 1954-1965
St. Petersburg Technical University 1965-1971
MSci studies at Tallinn University of Technology 1997-1998
PhD studies at Tallinn University of Technology 1999-2002
 
 
R&D related managerial and administrative work
-

Qualifications

Academic degrees
Oleg Korolkov, Doctor's Degree, 2004, (sup) Toomas Rang, Al-kontaktide valmistamine pooljuht ränikarbiidile kasutades difusioonkeevituse meetodit, Tallinn University of Technology.
Oleg Korolkov, Research Master's Degree, 1998, (sup) Toomas Rang, Investigation of Silicon Power Semiconductor Devices manufactured Using Diffusion Welding Technology, Tallinn University of Technology.
 
 
Honours & awards
0, Oleg Korolkov, N o
 
 
Additional information
MSci, E.E.
PhD, E.E.
Tallinn University of Technology 1998
Tallinn University of Technology 2004

Completed projects

Supervised dissertations

Publications

Category
Year
Publication
 
1.1.
2019
Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T. (2019). Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons. Semiconductors, 53 (7), 975−978. DOI: 10.1134/S1063782619070133.
3.1.
2019
Sleptsuk, N.; Lebedev, A.; Eliseyev, I.; Korolkov, O.; Toompuu, J.; Land, R.; Mikli, V.; Zubov, A.; Rang, T. (2019). Comparative Investigation of the Graphene-on-Silicon Carbide and CVD Graphene as a Basis for Biosensor Application. In: K. Karjust, J. Kübarsepp, T. Otto, I. Hussainova (Ed.). Modern Materials and Manufacturing 2019 (185−190). Trans Tech Publications Ltd. (Key Engineering Materials; 799). DOI: 10.4028/www.scientific.net/KEM.799.185.
1.1.
2018
Korolkov, Oleg; Land, Raul, Toompuu, Jana; Sleptšuk, Natalja; Rang, Toomas (2018). SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack. Materials Science Forum, 924, 862−865. DOI: 10.4028/www.scientific.net/MSF.924.862.
3.1.
2018
Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, Toomas (2018). The measurement and tuning of SiC Diode Voltage Doubler represented as diffusion-welded stack. Proceedings of Baltic Electronics Conference BEC2018: 16th Biennial Baltic Electronics Conference BEC2018, Tallinn, Estonia, October 8-10, 2018. Ed. Ants Koel, Peeter Ellervee. Tallinn: IEEE Catalog Number: CFP18BEC-USB. DOI: 10.1109/BEC.2018.8600963.
1.1.
2017
A.A.Lebedev, K.S.Davydovskaya, V.V.Kozlovski, O.Korolkov, N.Sleptsuk, J.Toompuu (2017). Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 Mev Electrons. Materials Science Forum, 897, 447−450. DOI: 10.4028/www.scientific.net/MSF.897.447.
1.1.
2017
Korolkov,Oleg; Kozlovski,Vitali; Lebedev,Alexander; Land,Raul; Sleptsuk,Natalja; Toompuu,Jana; Rang,Toomas (2017). SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack. Materials Science Forum, 897, 697−700. DOI: 10.4028/www.scientific.net/MSF.897.697.
3.1.
2017
Veher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, Toomas (2017). The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes. In: D. O. Nortwood, J. de Hosson, T. Rang, C.A Brebbia (Ed.). WIT Transactions on Engineering Sciences. Material Characterization 2017 (15−22). Great Britain: WIT Press.10.2495/MC170021.
1.1.
2016
Korolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land Raul; Rang, Toomas (2016). High-voltage diffusion-welded stacks on the basis of SiC Schottky diodes. In: Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio (Ed.). Silicon Carbide and Related Materials/Materials Science Forum (790−794). Trans Tech Publications Ltd. DOI: 10.4028/www.scientific.net/MSF.858.790.
3.1.
2016
Sleptsuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, Toomas (2016). Comparative Characteristics of Diffusion-Welded High-Voltage Stacks and Connected in Series Schottky diodes. Baltic Electronics Conference; The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang; Peeter Ellervee. TTU Press, 39−42. (IEEE Catalog Number: CFP16BEC-USB). DOI: 10.1109/BEC.2016.7743723.
3.1.
2016
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2016). Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis. Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang, Peeter Ellervee. Tallinn: TTU Press, 35−38. (IEEE Catalo Number: CFP16BEC-USB).10.1109/BEC.2016.7743722.
3.1.
2015
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2015). Analysis of deep level spectrum in GaAs p+pinn+ structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (283−294). Great Britain: WIT Press. DOI: 10.2495/MC150261.
3.1.
2015
Shenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, Galina (2015). Polytypic heterojunctions for wide bandgap semiconductor structures. In: C. A. Brebbia (Ed.). Materials Characterization VII (273−282). Great Britain: WIT Press. DOI: 10.2495/MC150251.
3.1.
2014
Toompuu, J.; Korolkov, O.; Sleptsuk, N.; Rang, T. (2014). Investigation of Deep Level Centers in i- and n-Layers of GaAs pin-Diodes. Proceedings of the 14th Biennial Baltic Electronics Conference: BEC2014 2014 14th Biennial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn: IEEE, 25−28.
1.1.
2013
Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2013). Analysis of Deep Level Centres in GaAs pin-Diode Structures. Electronics and Electrical Engineering, 19 (10), 95−98.
1.1.
2013
Mizsei, János; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, Toomas (2013). Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe. Materials Science Forum, 740-742, 677−680.
1.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. Materials Science Forum, 717-720, 275−278.
1.1.
2012
Ivanov, P.; Grekhov, I.; Potapov, A.; Kon'kov, O.; Il'inskaya, N.; Samsonova, T.; Korolkov, O.; Sleptsuk, N. (2012). Leakage Currents in 4H-SiC JBS Diodes. Semiconductors, 46 (3), 411−415.10.1134/S106378261203013X.
1.1.
2012
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, Valdek (2012). The Specificity of Solid-Phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-Welded Contacts to Semiconductor Devices. Elektronika ir Elektrotechnika, 18 (8), 45−48.
1.2.
2012
Ivanov, Pavel; Grekhov, Ilya; Potapov, Alexander; Kon’kov, O.; Il’inskaya, N.; Samsonova, Tatyana; Korolkov, Oleg; Sleptsuk, Natalja (2012). Токи утечки в 4H-SiC-диодах Шоттки с интегрированной шоттки (p−n- структурой). Физика и техника полупроводников (411−415).. Российская академия наук. (3).
1.2.
2012
Glazov, Aleksei; Kozlov, Vladimir; Korolkov, Oleg.; Muratikov, Kirill (2012). Анализ процессов распросттранения тепла в структурах импульсных силовых приборов вблизи плоскостей спая кремниевых пластин в высоковольтные "столбы". Материалы электронной техники, 2, 65−69.
3.1.
2012
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2012). Experimental study of surface distorsions in silicon carbide caused by diffusion welding. Proceedings of the 13th Biennial Baltic Electronics Conference: 2012 13th Binnial Baltic Electronics Conference. Ed. Toomas Rang, Peeter Ellervee. Tallinn, Estonia; IEEE Catalog Number: CFP12BEC-PRT: TTU Press, 53−56.
5.1.
2012
Mizsei, János; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2012). Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe. In: The 9th European Conference of Silicon Carbide and Related Materials. Abstract Book, St. Petersburg Russia; 2-6 Sept. 2012 (TuP40).. St. Petersburg: Trans Tech Publications Ltd.
1.1.
2011
Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Diffusion Welded Contacts and Related Art Applied to Semiconductor Materials. Electronics and Electrical Engineering, 67−70.
1.1.
2011
Ivanov, Pavel; Korolkov, Oleg; Samsonova, Tat'yana; Sleptsuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, Toomas (2011). DLTS Measurements on 4H-SiC JBS-diodes with Boron Implanted Local p-n Junctions. Materials Science Forum, 679-680, 409−412.
1.2.
2011
Ivanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korol'kov, Oleg; Sleptsuk, Natalja (2011). Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии. Физика и техника полупроводников (1358−1362).. Российская академия наук. (10).
5.1.
2011
Mizsei, János; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, Jana; Rang, Toomas (2011). Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding. 2011 International Conference on Silicon Carbide and Related Materials Abstract Book: ICSCRM2011 Cleveland Ohio, USA, September 11-16, 2011. Cleveland, USA: Trans Tech Publications Ltd, 356.
1.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Rang, Toomas (2010). Investigation of p-i-n GaAs Structures by DLTS Method. Electronics and Electrical Engineering, 51−54.
3.1.
2010
Sleptsuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas (2010). Comparison of individual SiC JBS chips and JBS stacks in series. Proceedings of the 12th Biennial Baltic Electronic Conference BEC2010: IEEE 2010 12th Biennial Baltic Electronics Conference. Ed. T. Rang, P. Ellervee, M. Min. IEEE, 81−84.
3.1.
2010
Toompuu, Jana; Korolkov, Oleg; Sleptshuk, Natalja; Vojtovich, Viktor; Rang, Toomas (2010). GaAs Based Diffusion Welded High Voltage Diode Stacks. In: IEEE International Conference on Semiconductor Electronics CD-ROM Proceedings (4−7).. Malaysia: IEEE Operations Center.
1.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of Subcontact Layers in SiC After Diffusion Welding. Materials Science Forum, 600-603, 647−650.
3.1.
2009
Korolkov, O., Kuznetsova, N., Sitnikova, A., Viljus, M., Rang, T. (2009). Investigation of subcontact layers in SiC after diffusion welding. In: Suzuki, A.; Okumura, H.; Kimoto, T.; Fuyuki, T.; Fukuda, K.; Nishizawa, S. (Ed.). Silicon Carbide and Related Materials 2007 (647−650).. Trans Tech Publications Ltd.
3.1.
2008
Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T. (2008). Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding. 2008 International Baltic Electronics Conference BEC2008: Baltic Electronics Conference 2008, Tallinn, Oct. 6-8. Ed. Toomas Rang. Tallinn, Estonia, IEEE copyright: Tallinn University of Technology Press, 91−94.
1.1.
2007
Korolkov, O., Kuznetsova, N., Rang, T., Syrkin, A., Dmitriev, V (2007). The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts. In: Wright, N., Johnson, C.M., Vassilevski, K., Nikitina, I., Horsfall, A. (Ed.). Silicon Carbide and Related materials (737−740).. Switzerland: Trans Tech Publications Ltd.
3.1.
2006
N. Kuznetsova, O. Korolokov, T. Rang, M. Pikkov (2006). The basic Schottky parameters for combined diffusion welded and sputter metal contacts. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T. Rang. Tallinn: IEEE Operations Center, 47−50.
3.1.
2006
Korolkov, O.; Kuznetsova, N.; Rang, T. (2006). Clamp mode package diffusion welded power SiC Schottky diodes. Proceedings of the 10th Biennial Baltic Electronics Conference BEC2006: 2006 International Baltic Electronics Conference, Tallinn, Oct. 2-4, 2006. Ed. T.Rang. Tallinn: IEEE Operations Center, 55−58.
3.1.
2006
Korolkov, O.; Rang, T.; Syrkin, A.; Dmitriev, V. (2006). Diffusion Welding Techniques for Power SiC Schottky Packaging. Silicon Carbide and Related materials: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, PA, SEP 18-23, 2005. Ed. Devaty, R.P.; Larkin, D.J.; Saddow, S.E. Switzerland: Trans Tech Publications Ltd, 919−922. (Materials Science Forum ; 527-529).
1.1.
2004
Korolkov, O.; Ruut, J.; Kuznetsova, N.; Rang, T. (2004). The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In: R. Madar, J. Camassel, E. Blanquet (Ed.). Silicon Carbide and Related Materials 2003 (857−860).. Trans Tech Publications Ltd. (Materials Science Forum; 457-460 ).
3.1.
2004
Korolkov, O.; Ljutov, J.; Kuznetsova, N.; Ruut, J.; Rang, T. (2004). Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts top- and n-type SiC. BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Ed. Rang, T. Tallinn: Tallinn University of Technology, 51−53.
1.1.
2000
Korolkov, O.; Rang, T (2000). Formation of large area Al contacts on 6H-and 4H-sic substrates. In: Silicon Carbide and Related Materials, Ecscrm2000 (603−606). Zurich-Uetikon: Trans Tech Publications Ltd.
3.4.
2000
Korolkov, O.; Rang, T. (2000). Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. BEC 2000, Oct. 8-11, 2000, Tallinn, Estonia. , 23−26.
1.3.
1999
"Rang, Toomas;Korolkov, Oleg;Pikkov, Mihhail" (1999). Metallization technologies for wide band-gap semiconductor substrates : (invited paper). Proceeding of the Estonian Academy of Sciences. Engineering (27−30).. TA kirjastus.
3.5.
1997
Korolkov, O.; Rang, T. (1997). Diffusion Welded Contacts for Silicon Semiconductor Devices. In: B. Michel, T. Winkler (Ed.). Micromaterials (120−123). . Dresden: ddp Publisher.
6.7.
1997
Velmre, Enn; Rang, Toomas; Udal, Andres; Korolkov, Oleg; Putting, Aiki; Koel, Ants (1997). Füüsikaliste mudelite väljatöötamine ränist ja ränikarbiidist pooljuhtseadiste numbriliseks modelleerimiseks = Development of physical models for use in silicon and silicon carbide device numerical modeling : aruanne aastail 1993-1996 Eesti Teadusfondi ... tööst nr. 568 : elektrotehnika. Tallinn: Tallinna Tehnikaülikool.

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ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
SFSF0140061s12Energiasäästlikud elektroonikasüsteemid01.01.201231.12.2013Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond468 120,00 EUR
MUUAR10126Energiasüsteemi talitluse optimeerimine muutuvkoormuste tasakaalustamiseks01.11.201031.10.2013Toomas Rang; Arvo OtsTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektrotehnika instituut, Elektriajamite ja elektrivarustuse õppetool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektroenergeetika instituut, Energiasüsteemide õppetool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool; Tallinna Tehnikaülikool, Energeetikateaduskond, Elektrotehnika instituut, Elektrimasinate õppetool; Tallinna Tehnikaülikool, Mehaanikateaduskond, Soojustehnika instituut, Soojusenergeetika õppetool951 405,00 EUR
MUU038LGaAs baseeruvate pingekordistite väljatöötamine01.11.200031.12.2005Toomas RangTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool20 771,29 EUR
IUTIUT19-11Impedants-spektroskoopia põhine objektide identifitseerimine ja juhtimine: signaalid, algoritmid, energiasäästlikud lahendused01.01.201431.12.2019Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut1 446 000,00 EUR
TKTAR8077IEIntegreeritud elektroonikasüsteemide ja biomeditsiinitehnika tippkeskus CEBE01.02.200831.08.2015Mart MinTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Rakenduselektroonika õppetool1 584 369,77 EUR
ETFETF8592Laia keelutsooniga materjalidel baseeruvad integreeritud Schottky ja heterosiirded: tehnoloogiad ja modelleerimine 01.01.201131.12.2014Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond44 160,00 EUR
ETFETF7183Laia keelutsooniga materjalidel pōhinevate pooljuhtstruktuuride kontaktid: üleminekuala kompositsioon ja morfoloogia ning modelleerimine01.01.200731.12.2010Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond30 064,04 EUR
ETFETF5917Metall-SiC kontaktkihi struktuuridefektide uurimine01.01.200431.12.2006Mart ViljusTallinna Tehnikaülikool, Keemia ja materjalitehnoloogia teaduskond13 495,74 EUR
SFSF0142737s06Missioonikriitiliste sardsüsteemide elektroonsed komponendid ja alamsüsteemid01.01.200631.12.2011Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond1 187 937,80 EUR
MUUÜLKAP44Sardsüsteemid ja komponendid (SARS)01.07.200630.06.2008Toomas RangTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool3 582 120,08 EUR
ETFETF5901Schottky siirded laia keelutsooniga pooljuhtides: Laengukandjate transpordimudelid ja mudelite parameetreid môjutavad elektrofüüsikalised nähtused01.01.200431.12.2006Toomas RangTallinna Tehnikaülikool, Infotehnoloogia teaduskond22 474,35 EUR
MUUG4869 (ETF4869)Schottky siirded ränikarbiidi baasil: elektrilised omadused ja mudelid, struktuuride mõõtmine ja testimine.01.01.200131.12.2003Toomas RangTallinna Tehnikaülikool; Tallinna Tehnikaülikool, Infotehnoloogia teaduskond, Thomas Johann Seebecki elektroonikainstituut, Elektroonikadisaini õppetool11 504,10 EUR
SFSF0141754s01Seire- ja andmehõivesüsteemid: elektroonsed komponendid, tehnoloogia, lülitused; mudelid, algoritmid, süsteemi-integratsiooni meetodid.01.01.200131.12.2005Mart MinTallinna Tehnikaülikool, Infotehnoloogia teaduskond387 847,83 EUR