Teenistuskäik

Töökohad ja ametid
2011–...   
Riga Technical University, Vanemteadur (0,50)
 
 
Haridustee
2004–2009   
Riga Technical University, Doctor of Physics in Materialphysics, “Surfaces Nanostructures of Si, Ge and SiGe Semiconductors Formed by Laser Radiation”, Diploma series D Nr.0181, registration Nr. 0164;
 
 
Loometöö
The field of scientific interest: investigation of the semiconductors: Si, Ge, GeSi/Si, InSb, Te, CdTe, CdZnTe, SiC and ZnO under nonequilibrium conditions in nonhomogeneous electric, magnetic and temperature fields, transport process in semiconductors, interaction of laser beam with Solid State materials, Nanostructures formation on a surface of semiconductors by laser radiation, laser technology application in solar cells..
 
 
Teenistuskäigu lisainfo
More than 150 scientific publications and patents.
Hirsch’s h-index = 7
;

Kvalifikatsioon

 
 
Teaduspreemiad ja tunnustused
2009, Pavels Onufrijevs, Young Researchers Award for outstanding paper presented during The International Conference on Global Research and Education - Inter-Academia 2009.
2009, Pavels Onufrijevs, Award of the year of The Ministry of Education and Science of Republic of Latvia and Latvenergo AS in achievement of energetic for young researchers.
 
 
Teadustöö põhisuunad
VALDKOND: 4. Loodusteadused ja tehnika; 4.10. Füüsika; CERCS ERIALA: P265 Pooljuhtide füüsika ; PÕHISUUND: Doctor of Physics in Materialphysics
 
 
Lisainfo
1. Artur Medvid’, Pavels Onufrijevs, Edvins Dauksta, Nikolai A.Sobolev, „Homo- and Heterostructure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cone Formation”, Solid State Phenomena, Vols. 205-206, pp.475-479, 2014.
2. (Nano Review) Artur Medvid, Pavels Onufrijevs, Renata Jarimaviciute-Gudaitiene, Edvins Dauksta and Igoris Prosycevas, „Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals”, Nanoscale Research Letters, 8:264, 2013.
3. Artur Medvid’, Aleksandr Mycko, Pavels Onufrijevs & Edvins Dauksta,” Application of Nd:YAG laser in semiconductors nanotechnology” chapter 6, in book „Nd YAG laser”, Edited by Dan Constantin Dumbras, INTECH, 2012.
4. Artur Medvid’, Pavels Onufrijevs, Gatis Mozolevskis, Edvins Dauksta and Roberts Rimsa, „Two-stage model of nanocones formation on a surface of elementary semiconductors by laser radiation”, Nanoscale Research Letters, pp.7:428, 2012.
5. P. Onufrijevs, T. Serevicius, P. Scajev, G. Manolis, A. Medvids, L. Chernyak, E. Kuokstis, C.C. Yang and K. Jarasiunas. ”Characterization of Optical and Photoelectrical Properties of ZnO Crystals” ACTA PHYSICA POLONICA A , Vol. 119, N.2, pp.274-276, 2011.
6. A. Medvid’, P. Onufrijevs, K. Lyutovich, M. Oehme, and E. Kasper.” Nano-Cones Formation on a Surface of Si, Ge Crystals and Si1−xGex Solid Solution by Laser Radiation” , Journal of Nanoscience and Nanotechnology, Vol. 11, pp.1–7, 2011.
7. A.Medvids, P.Onufrijevs, A.Mychko, ”Properties of Nanocones Formed on a Surface of Semiconductors by Laser Radiation: Quantum Confinement effect of Electrons, Phonons and Excitons” Nanoscale Research Letters, Vol. 6. pp 582-588, 2011.
8. Pavels Onufrijevs, Artur Medvid', Edvins Dauksta, Tina Trautnitz, Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation, Advanced Materials Research, Vol. 222, pp.158-161, 2011.
9. A.Evtuh , A.Medvid ‘ , P.Onufrijevs , M.Okada , H.Mimura ,”Electron field emission from the Si nanostructures formed by laser irradiation”, Journal of Vacuum Science & Technology B, Vol.28, No.2, pp.C2B11-C2B13, 2010.
10. A. Medvid', P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, N. Dmitruk, O. Kondratenko, I. Dmitruk, and I. Pundyk, “Self-Assembly of Nanohills in Si1-xGex/Si Hetero-Epitaxial Structure Due to Ge Redistribution Induced by Laser Radiation” J. Nanoscience & Nanotechnology, Vol.10, pp.1094-1098, 2010.
26.06.2018

Career

Institution(s) and position(s)
2011–...   
Riga Technical University, Senior Researcher (0,50)
 
 
Education
2004–2009   
Riga Technical University, Doctor of Physics in Materialphysics, “Surfaces Nanostructures of Si, Ge and SiGe Semiconductors Formed by Laser Radiation”, Diploma series D Nr.0181, registration Nr. 0164;
 
 
Creative work
The field of scientific interest: investigation of the semiconductors: Si, Ge, GeSi/Si, InSb, Te, CdTe, CdZnTe, SiC and ZnO under nonequilibrium conditions in nonhomogeneous electric, magnetic and temperature fields, transport process in semiconductors, interaction of laser beam with Solid State materials, Nanostructures formation on a surface of semiconductors by laser radiation, laser technology application in solar cells..
 
 
Additional career information
More than 150 scientific publications and patents.
Hirsch’s h-index = 7
;

Qualifications

 
 
Honours & awards
2009, Pavels Onufrijevs, Young Researchers Award for outstanding paper presented during The International Conference on Global Research and Education - Inter-Academia 2009.
2009, Pavels Onufrijevs, Award of the year of The Ministry of Education and Science of Republic of Latvia and Latvenergo AS in achievement of energetic for young researchers.
 
 
Field of research
FIELD OF RESEARCH: 4. Natural Sciences and Engineering; 4.10. Physics and Technical Physics; CERCS SPECIALITY: P265 Semiconductory physics ; SPECIALITY: Doctor of Physics in Materialphysics
 
 
Additional information
1. Artur Medvid’, Pavels Onufrijevs, Edvins Dauksta, Nikolai A.Sobolev, „Homo- and Heterostructure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cone Formation”, Solid State Phenomena, Vols. 205-206, pp.475-479, 2014.
2. (Nano Review) Artur Medvid, Pavels Onufrijevs, Renata Jarimaviciute-Gudaitiene, Edvins Dauksta and Igoris Prosycevas, „Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals”, Nanoscale Research Letters, 8:264, 2013.
3. Artur Medvid’, Aleksandr Mycko, Pavels Onufrijevs & Edvins Dauksta,” Application of Nd:YAG laser in semiconductors nanotechnology” chapter 6, in book „Nd YAG laser”, Edited by Dan Constantin Dumbras, INTECH, 2012.
4. Artur Medvid’, Pavels Onufrijevs, Gatis Mozolevskis, Edvins Dauksta and Roberts Rimsa, „Two-stage model of nanocones formation on a surface of elementary semiconductors by laser radiation”, Nanoscale Research Letters, pp.7:428, 2012.
5. P. Onufrijevs, T. Serevicius, P. Scajev, G. Manolis, A. Medvids, L. Chernyak, E. Kuokstis, C.C. Yang and K. Jarasiunas. ”Characterization of Optical and Photoelectrical Properties of ZnO Crystals” ACTA PHYSICA POLONICA A , Vol. 119, N.2, pp.274-276, 2011.
6. A. Medvid’, P. Onufrijevs, K. Lyutovich, M. Oehme, and E. Kasper.” Nano-Cones Formation on a Surface of Si, Ge Crystals and Si1−xGex Solid Solution by Laser Radiation” , Journal of Nanoscience and Nanotechnology, Vol. 11, pp.1–7, 2011.
7. A.Medvids, P.Onufrijevs, A.Mychko, ”Properties of Nanocones Formed on a Surface of Semiconductors by Laser Radiation: Quantum Confinement effect of Electrons, Phonons and Excitons” Nanoscale Research Letters, Vol. 6. pp 582-588, 2011.
8. Pavels Onufrijevs, Artur Medvid', Edvins Dauksta, Tina Trautnitz, Decrease of Point Defect Concentration at a Surface of ZnO/Si Heterostructure by Powerful Laser Radiation, Advanced Materials Research, Vol. 222, pp.158-161, 2011.
9. A.Evtuh , A.Medvid ‘ , P.Onufrijevs , M.Okada , H.Mimura ,”Electron field emission from the Si nanostructures formed by laser irradiation”, Journal of Vacuum Science & Technology B, Vol.28, No.2, pp.C2B11-C2B13, 2010.
10. A. Medvid', P. Onufrijevs, K. Lyutovich, M. Oehme, E. Kasper, N. Dmitruk, O. Kondratenko, I. Dmitruk, and I. Pundyk, “Self-Assembly of Nanohills in Si1-xGex/Si Hetero-Epitaxial Structure Due to Ge Redistribution Induced by Laser Radiation” J. Nanoscience & Nanotechnology, Vol.10, pp.1094-1098, 2010.
26.06.2018