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Olen nõus

Tiit Kärner

https://www.etis.ee/CV/Tiit_Kärner/est
13.02.1942
737 4765
tiit.karner@ut.ee

Teenistuskäik

Töökohad ja ametid
01.01.2002–31.12.2007   
Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut, vanemteadur (1,00)
1985–2002   
TÜFI, Vanemteadur (1,00)
1975–1985   
TÜFI, Nooremteadur (1,00)
1974–1975   
Tartu Ülikooli Füüsika Instituut (TÜFI), insener (1,00)
1966–1973   
Tallinna Tehnikaülikool, Assistent (1,00)
 
 
Haridustee
Lõpetasin 1965.a Tartu Ülikooli füüsika erialal
 
 
Teadusorganisatsiooniline ja -administratiivne tegevus
Eesti Füüsikaühingu ja Euroopa Füüsikaühingu liige

Kvalifikatsioon

Teaduskraadid
Tiit Kärner, doktorikraad, 1979, (juh) Tšeslav Luštšik, Rekombinatsioonluminestsents ja paramagnetilised tsentrid kiiritatud MgO kristallides, Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut.
 
 
Teaduspreemiad ja tunnustused
0, Tiit Kärner, Eesti teaduspreemia teadlasterühma koosseisus 1987
 
 
Teadustöö põhisuunad
ETIS KLASSIFIKAATOR: 4. Loodusteadused ja tehnika; 4.10. Füüsika; TÄPSUSTUS: tahkisefüüsika, kiiritusfüüsika, laia keelutsooniga materjalide EPR-spektroskoopia
 
 
Lisainfo
füüs-mat.kandidaat tahkisefüüsika alal
TÜFI

Juhendatud väitekirjad

Publikatsioonid

Klass
Aasta
Publikatsioon
 
1.1.
2015
Bondar, V.; Grigorjeva, L.; Kärner, T.; Sidletskiy, O.; Smits, K.; Zazubovich, S.; Zolotarjovs, A. (2015). Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (LuGd)2SiO5 single crystals. Journal of Luminescence, 159, 229−237. DOI: 10.1016/j.jlumin.2014.11.034.
1.1.
2014
Kärner, T.; Laguta, V.V.; Nikl, M.; Zazubovich, S. (2014). Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals. physica status solidi (b), 251 (4), 741−747. DOI: 10.1002/pssb.201350028.
1.1.
2014
Laguta, V.V.; Buryi, M.; Rosa, J.; Savchenko, D.; Hybler, J.; Nikl, M.; Zazubovich, S.; Kärner, T.; Stanek, C.R.; McClellan, K.J. (2014). Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen. Physical Review B, 90 (6), 064104-1−064104-12. DOI: 10.1103/PhysRevB.90.064104.
1.1.
2014
Kärner, T.; Laguta, V.V.; Nikl, M.; Shalapska, T.; Zazubovich, S. (2014). On the origin of Ce-related centers in lead-containing single crystalline films of Y2SiO5:Ce and Lu2SiO5:Ce. Journal of Physics D Applied Physics, 47 (6), 065303(1). DOI: 10.1088/0022-3727/47/6/065303.
1.1.
2013
Fabeni, P.; Krasnikov, A.; Kärner, T.; Laguta, V.V.; Nikl, M.; Pazzi, G.P.; Zazubovich, S. (2013). Luminescence and photo-thermally stimulated defects creation processes in PbWO4 crystals doped with trivalent rare-earth ions. Journal of Luminescence, 136, 42−50. DOI: 10.1016/j.jlumin.2012.11.004.
1.1.
2012
Lushchik, A.; Kärner, T.; Lushchik, Ch.; Schwartz, K.; Savikhin, F.; Shablonin, E.; Shugai, A.; Vasil'chenko, E. (2012). Electronic excitations to defect creation in wide-gap MgO and Lu3Al5O12 crystals irradiated with swift heavy ions. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 286, 200−208.10.1016/j.nimb.2011.11.016.
1.1.
2011
Babin, V.; Gorbenko, V.; Kondakova, I.; Kärner, T.; Laguta, V. V.; Nikl, M.; Zazubovich, S., Zorenko, Y. (2011). Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3:Ce. Journal of Physics D Applied Physics, 44 (31), 315402. DOI: 10.1088/0022-3727/44/31/315402.
1.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E. (2011). Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 259−262.
1.1.
2011
Dolgov, S; Kärner, T; Lushchik, A; Maaroos, A; Nakonechnyi, S; Shablonin, E (2011). Trapped-hole centers in MgO single crystals. Physics of the Solid State, 53 (6), 1244−1252.10.1134/S1063783411060084.
1.1.
2011
Dolgov, S; Kärner, T; Lushchik, A.; Maaroos, A; Nakonechnyi, S; Shablonin, E. (2011). Локализованные дырки в монокристаллах MgO. Физика Твердого Тела, 53 (6), 1179−1187.
3.1.
2011
Kropman, Daniel; Karner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tonu; Londos, Charalampos (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. physica status solidi (c), 8 (3), 694−696. DOI: 10.1002/pssc.201000269.
3.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Laas, T.; Londos, C.A.; Misiuk, A. (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 263−266. DOI: 10.4028/www.scientific.net/SSP.178-179.263.
6.6.
2011
Babin, V.; Grigorjeva, L.; Kondakova, I.; Kärner, T.; Laguta, V. V.; Nikl, M.; Smits, K.; Zazubovich, S.; Zorenko, Yu. (2011). Time-resolved spectroscopy of exciton states in single crystals, single crystalline films and powders of YAlO_3 and YAlO_3:Ce. 1−21.
1.1.
2010
Lushchik, A; Lushchik, Ch; Kärner, T; Liblik, P; Nagirnyi, V; Shablonin, E; Shugai, A; Vasil'chenko, E (2010). Franck-Hertz effect in cathodo- and photoluminescence of wide-gap materials. Radiation Measurements, 45, 268−272.10.1016/j.radmeas.2010.01.042.
1.1.
2010
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Thin Solid Films, 518 (9), 2374−2376. DOI: 10.1016/j.tsf.2009.09.011.
1.2.
2010
Krasnikov, A.; Kärner, T.; Kiisk, V; Laguta, V. V.; Nikl, M.; Sildos, I; Usuki, Y.; Zazubovich, S. (2010). Ultraviolet luminescence and creation of (WO4)3--type centers under UV irradiation of PbWO4 crystals doped with trivalent rare-earth ions. Journal of Physics Conference Series, 249 (1), 012001(1)−012001(8).
3.1.
2010
Kropman, D.; Mellikov, E.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skorupa, W.; Prucnal, S.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Gettering and Defect Engineering in Semiconductor Technology XIII, 145−148.
3.4.
2010
Kropman, D.; Kärner, T.; Dolgov, Sergei; Heinmaa, I.; Laas, T.; Londos, C. A. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. The 9th International Conference on Global Research and Education. Riga, Latvia, 231−233.
1.1.
2009
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2009). Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties. Physica B Condensed Matter, 404, 5153−5155.
1.1.
2009
Fabeni, P.; Krasnikov, A.; Kärner, T.; Laguta, V.V.; Nikl, M.; Pazzi, G.P.; Zazubovich, S. (2009). Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region. Journal of Luminescence, 129, 767−772. DOI: 10.1016/j.jlumin.2009.02.011.
1.2.
2009
Lushchik, A.; Lushchik, Ch.; Kärner, T.; Nagirnyi, V.; Shablonin, E.; Vasil'chenko, E. (2009). Impact and nonimpact creation mechanisms of radiation defects in ionic crystals. Izvestiya VUZOV. Fisika (Russian Physics Journal), 52, 95−100.
1.3.
2009
Kärner, T. (2009). Inimene, ühiskond ja sotsiaalteaduste uus paradigma. Akadeemia, 2, 287−306.
1.1.
2008
Lushchik, A.; Lushchik, Ch.; Schwartz, K.; Vasil'chenko, E.; Kärner, T.; Kudryavtseva, I.; Isakhanyan, V.; Shugai, A. (2008). Stabilization and annealing of interstitials formed by radiation in binary metal oxides and fluorides. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, 2868−2871. DOI: 10.1016/j.nimb.2008.03.132.
1.1.
2008
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Abru, U., Medvid, A. (2008). Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Solid State Phenomena, 131-133, 345−349.
5.2.
2008
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2008). Strain Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Technologia. Kaunas 2008: Radiation Interaction with Materials and its use in Technologies. Kaunas, 24-27.09.2008. Ed. Grigonis, A. Kaünas: Lithuanian Academy of Sciences, 204−207.
1.1.
2007
Lushchik, A.; Feldbach, E.; Galajev, S.; Kärner, T.; Liblik, P.; Lushchik, Ch.; Maaroos, A.; Nagirnyi, V.; Vasil'chenko, E. (2007). Some aspects of radiation resistance of wide-gap metal oxides. Radiation Measurements, 42, 792−797.
1.2.
2007
Lushchik, A.; Kärner, T.; Lushchik, Ch.; Vasil'chenko, E.; Dolgov, S.; Issahhanyan, V.; Liblik, P. (2007). Dependence of long-lived defect creation on excitation density in MgO single crystals. physica status solidi (c), 4 (3), 1084−1087.
3.4.
2007
Mironova-Ulmane, N.; Poljakovs, M.; Pavlenko, A.; Piekstina, D.; Zvagule, T.; Churbakova, E.; Kurjane, N.; Gabrusheva, N.; Eglite, M.; Kärner, T. (2007). Estiamtion of internal and external exposition in retrospective dosimetry of Chernobyl clean-up workers. Medical Physics in Baltic States, 5: 5th International Conference on Medical Physics. Kaunas, Lithuania, 5-6 October, 2007. 55−59.
3.4.
2007
Dizhbite, T.; Mironova-Ulmane, N.; Volperts, A.; Andersone, A.; Jashina, L.; Kärner, T.; Telysheva, G. (2007). Elaboration and characterization of organic/inorganic hybrid nanopourous material incorporating Keggin-type Mo-Si polyanions. Journal of Physics: Conference Series, 93: Functional Materials and Nanotechnologies; Riga; 2–4 April 2007. DOI: 10.1088/1742-6596/93/1/012011.
5.1.
2007
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A. (2007). Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties. 11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts: 11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007. Manaus, Amazonas, Brasiilia, 122.
1.1.
2006
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Medvid, A. (2006). Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Materials Science and Engineering B, 134, 222−226.
1.1.
2006
Nakonechnyi, S.; Karner, T.; Lushchik, A.; Lushchik, C.; Babin, V.; Feldbach, E.; Kudryavtseva, I.; Liblik, P.; Pung, L.; Vasi'lchenko, E. (2006). Low-temperature excitonic, electron-hole and interstitial-vacancy processes in LiF single crystals. Journal of Physics: Condensed Matter, 18 (2), 379−394.
1.2.
2006
Vasil’chenko, E.; Kudryavtseva, I.; Kärner, T.; Lushchik, A.; Nagirnyi, V.; Nakonechnyi, S. (2006). Creation of stable defects by VUV radiation, electrons and swift ions in LiFb crystals at 8 or 300 K. Russian Physics Journal, 49 (10), 111−114.
1.2.
2006
Lushchik, A; Dolgov, S; Kärner, T; Lushchik, Ch; Schwartz, K; Vasil’chenko, E. (2006). Peculiarities of long-lived defect creation under irradiation of metal fluorides and oxides by photons, electrons and ions. Russian Physics Journal, 49 (10), 9−12.
1.1.
2005
Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A. (2005). Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties. Gettering and Defect Engineering in Semiconductor Technology XI: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005. Ed. Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M. Trans Tech Publications Ltd, 333−338. (Solid State Phenomena; 108-109).
1.2.
2005
Issahanyan, V.; Kärner, T.; Maaroos, A.; Nakonechnyi, S. (2005). Spin relaxation processes in the defect hole centres of Be doped MgO single crystals. Physica Status Solidi A - Applications and Materials Science, 426−429.
1.2.
2005
Dolgov, S.; Feldbach, E.; Kärkkänen, A.; Kärner, T.; Liblik, P.; Maaroos, A.; Nakonechnyi, S. (2005). Low-temperature (4–295 K) thermoluminescence of pure and Ca-doped MgO single crystals. Physica Status Solidi, 2 (1), 422−425.
1.3.
2005
Kärner, T. (2005). Globaalsetest kriisidest. Akadeemia, 9, 1874−1890.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E (2004). Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation. Thin Solid Films, 459, 53−57.
1.1.
2004
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Liblik, P.; Maaroos, A.; Nakonechnyi, S. (2004). Luminescence of [Be](+) centre in MgO : Be. Radiation Measurements, 38, 699−702.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M. (2004). Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation. Materials Science and Engineering B, 114-115, 295−298.
3.4.
2004
Kropman, D.; Kärner, T.; Abru, U.; Ugaste, Ü.; Mellikov, E. (2004). Point defects Interaction with Extended Defects in the Si-SiO2 System. Proceedings of IVC-16,: June 2004, Venice. SS1-TuP394 .
1.1.
2003
Karner, T.; Dolgov, SA.; Isakhanyan, V.; Maaroos, A.; Nakonechnyi, S. (2003). Paramagnetic centres in Be-doped MgO single crystals. Radiation Effects and Defects in Solids, 158, 163−166.
1.1.
2003
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Maaroos, A.; Nakonechnyi, S. (2003). Electron paramagnetic resonance of the [Be](+) centre in MgO : Be. Journal of Physics: Condensed Matter, 15 (40), 6871−6878.
1.1.
2003
Kropman, D.; Poll, V.; Kärner, T.; Ugaste, U.; Mellikov, E.; Abru, U.; Paomets, V. (2003). Investigation of the strain relaxation mechanism in the Si-SiO2 system during the process of its formation. physica status solidi (a), 198 (2), 297−301.
1.1.
2002
Dolgov, S.; Karner, T.; Lushchik, A.; Maaroos, A.; Mironova-Ulmane, N.; Nakonechnyi, S. (2002). Thermoluminescence centres created selectively in MgO crystals by fast neutrons. Radiation Protection Dosimetry, 100, 127−130.
1.1.
2002
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Maaroos, A.; Nakonechnyi, S. (2002). VOH-Be - a new and unusual member in the family of V centres. Journal of Physics: Condensed Matter, 14 (38), 8881−8888.
1.1.
2002
Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E. (2002). Interaction between point defects in the Si-SiO2 system during the process of its formation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 186, 78−82.
1.1.
2001
Karner, T.; Dolgov, S.; Lushchik, A.; Mironova-Ulmane, N.; Nakonechnyi, S.; Vasilchenko, E. (2001). High-temperature thermoluminescence manifestations of anion interstitials in neutron-irradiated pure and doped single crystals of MgO. Radiation Effects and Defects in Solids, 155, 171−175.
1.1.
2001
Mironova-Ulmane, N.; Pavlenko, A.; Zvagule, T.; Karner, T.; Bruvere, R.; Volrate, A. (2001). Retrospective dosimetry for Latvian workers at Chernobyl. Radiation Protection Dosimetry, 96, 237−240.
1.1.
2001
Karner, T.; Dolgov, S.; Mironova-Ulmane, N.; Nakonechnyi, S.; Vasillchenko, E. (2001). Anion interstitials in neutron-irradiated MgO single crystals. Radiation Measurements, 33 (5), 625−628.
1.1.
2001
Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E. (2001). Interaction of point defects with extended defects in the Si-SiO2 system during its formation process. Diffusions in Materials: Dimat2000, Pts 1 & 2, 194-1, 1737−1742.
1.1.
2000
Kuck, S.; Fornasiero, L.; Heumann, E.; Mix, E.; Huber, G.; Karner, T.; Maaroos, A. (2000). Investigation of Cr-doped MgO and Sc2O3 as potential laser sources for the near infrared spectral range. Laser Physics, 10 (2), 411−416.
1.1.
2000
Kärner, T.; Dolgov, S.; Kirm, M.; Liblik, P.; Lushchik, A.; Maaroos, A.; Nakonechnyi, S. (2000). Electronic excitations and luminescence in MgO:Ge single crystals. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 166-167, 232−237.
1.1.
2000
Kropman, D.; Abru, U.; Karner, T. (2000). Defect structure relaxation process in the Si-SiO2 system. Applied Surface Science, 166, 475−479.
1.2.
2000
Luštšik, T.; Luštšik, A.; Kärner, T.; Kirm, M.; Dolgov, S. (2000). Relaxation, self-trapping and decay of electronic excitations in wide-gap oxides. Russian Physics Journal, 43 (3), 171−180.
3.4.
2000
Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo (2000). Point defects generation and redistribution in SiSiO2 system during the process of its formation. Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000: International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02. _EditorsAbbr P.Vincenzini, V.Buscaglia. Faenza: Techna, 491−496. (Advances in Science and Technology; 29).
1.1.
1999
Kuck, S.; Heumann, E.; Karner, T.; Maaroos, A. (1999). Continuous-wave room-temperature laser oscillation of Cr3+: MgO. Optics Letters, 24 (14), 966−968.
1.1.
1999
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U.; Strik, M. (1999). Impurity gettering investigation in the Si-SiO2 system. Solid State Phenomena, 70, 267−272.
1.1.
1999
Kropman, D.; Abru, U.; Samoson, A.; Karner, T. (1999). On the kinetics of generation of point defects in the Si-SiO2 system. Thin Solid Films, 344, 412−415.
1.1.
1999
Dolgov, SA.; Kirm, M.; Karner, T.; Lushchik, A.; Maaroos, A. (1999). Luminescence and hole center formation by VUV-radiation in MgO : Al and MgO : Ge crystals. Physica Scripta, 59 (6), 481−485.
1.1.
1998
Kirm, M.; Feldbach, E.; Karner, T.; Lushchik, A.; Lushchik, C.; Maaroos, A.; Nagirnyi, V.; Martinson, I. (1998). Multiplication of electron-hole pairs in MgO crystals and ceramics. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 141, 431−435.
1.1.
1998
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U. (1998). Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system. Ultrasonics, 36 (10), 1021−1025.
3.2.
1998
Lushchik, Ch; Dolgov, S; Kärner, T; Käämbre, H; Lushchik, A; Savikhin, F. (1998). Three possible versions of luminescent dosimetry of fast neutrons in mixed neutron-gamma fields. V.S.Kortov, B.N.Shulgin, A.Ju.Kuznetsov. Solid State Detectors of Ionizing Radiation (13−29).. Ekaterinburg, Russia: Ural State Technical University.
1.1.
1997
Kropman, D.; Dolgov, S.; Karner, T. (1997). On point defect gettering by back-side damage in the Si-SiO2 system. Defect and Diffusion Forum, 143, 1027−1030.
1.1.
1997
Zazubovich, S.; Aceves, R.; Flores, MB.; Fabeni, P.; Karner, T.; Pazzi, GP.; Salas, RP.; Jaanson, N. (1997). Exciton 4.29 and 3.65 eV luminescence in CsI:Tl and CsI:Pb. Journal of Physics Condensed Matter, 9 (34), 7249−7256.
1.1.
1996
Kropman, D.; Dolgov, S.; Karner, T. (1996). On the kinetics of the generation of point defects in the Si-SiO2 system. Applied Physics A-Materials Science & Processing, 62 (5), 469−472.
1.1.
1994
Dolgov, SA.; Karner, T.; Maaroos, A.; Savihhina, T.; Vasilchenko, EA. (1994). Thermoluminescence and phosphorescence of vuv-irradiated and x-irradiated cao monocrystals at low-temperatures. physica status solidi (b), 186 (2), 581−590.
1.1.
1993
Kropman, D.; Karner, T. (1993). Esr investigation of the si-sio2 system. physica status solidi (a), 136 (1), 125−129.
1.1.
1992
Karner, T.; Dolgov, SA.; Feldbach, E.; Savikhin, FA.; Meriloo, I. (1992). Effect of subthreshold electron-irradiation on the microwave-absorption and luminescence of copper-free ba1-xkxbio3-type superconductors. Fizika Tverdogo Tela, 34 (11), 3429−3433.
1.2.
1992
Kärner, T.; Dolgov, S.A.; Feldbach, E.; Savikhin, F.A.; Meriloo, I. (1992). Influence of subthreshold-energy electrons on microwave absorption and luminescence of copper-free Ba1-xKxBiO3 superconductors. Soviet Physics: Solid State, 34, 1835−1838.
1.1.
1990
Antsigin, IN.; Gorbunov, SV.; Kruzhalov, AV.; Karner, TN. (1990). Formation and properties of v0-centers in beo. Fizika Tverdogo Tela, 32 (8), 2470−2472.
3.4.
1990
Lushchik, Ch.; Savikhin, F.; Kärner, T.; Feldbach, E.; Maaroos, A.; Bitov, I.; Dolgov, S.; Kudryavtseva, I.; Leib, T.; Liblik, P.; Meriloo, I. (1990). Is the subthreshold defect creation mechanism efficient in oxide dielectrics and superconductors. Proc. Intern. Workshop on Effects of Strong Disordering in HTSC, Zarechny, USSR (Moscow, 1990): Workshop on Effects of Strong Disordering in HTSC, Zarechny, USSR (Moscow, 1990). 185−193.
1.1.
1988
Denks, V.; Vasilchenko, EA.; Korsakov, VS.; Karner, T.; Seeman, V. (1988). Electron localization at the 3 sodium atoms in nonstoichiometric iodosodalite ceramic. Fizika Tverdogo Tela, 30 (1), 73−75.
1.1.
1986
Karner, TN.; Maaroos, AA.; Malysheva, AF.; Tazhigulov, BT. (1986). Fa+(be)-centers in mgo crystals. Fizika Tverdogo Tela, 28 (8), 2563−2565.
1.1.
1980
Karner, TN.; Malysheva, AF.; Maaroos, AA.; Murk, VV. (1980). Thermostimulated luminescence of mgo single-crystals in the temperature-range 4.2 to 600-k. Fizika Tverdogo Tela, 22 (4), 1178−1183.
1.1.
1978
Karner, TN.; Sorkin, BA. (1978). Hole processes in mgo crystals at photostimulated luminescence and electron-emission. Fizika Tverdogo Tela, 20 (9), 2696−2699.
1.1.
1976
Kalder, KA.; Kyarner, TN.; Lushchik, CB.; Malysheva, AF.; Milenina, RV. (1976). Exciton and electron-hole transfers of energy in mgo luminescent crystals. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 40 (11), 2313−2316.
18.04.2019

Tiit Kärner

https://www.etis.ee/CV/Tiit_Kärner/eng
13.02.1942
737 4765
tiit.karner@ut.ee

Career

Institutions and positions
01.01.2002–31.12.2007   
University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu, Senior Research Fellow (1,00)
1985–2002   
IPUT, Senior Researcher (1,00)
1975–1985   
IPUT, Junior Researcher (1,00)
1974–1975   
Institute of Physics, Univ. of Tartu (IPUT), engineer (1,00)
1966–1973   
Tallinn Technical University, Assistant (1,00)
 
 
Education
I graduated Tartu University as a physicist in 1965
 
 
R&D related managerial and administrative work
Member of Estonian Physical Society and European Physical Society

Qualifications

Academic degrees
Tiit Kärner, Doctor's Degree, 1979, (sup) Tšeslav Luštšik, Rekombinatsioonluminestsents ja paramagnetilised tsentrid kiiritatud MgO kristallides (Recombination luminescence and paramagnetic centres in irradiated MgO crystals ( in Russian)), University of Tartu, Faculty of Science and Technology (old), Institute of Physics, University of Tartu.
 
 
Honours & awards
0, Tiit Kärner, Estonian State prize (achievements in science) in 1987 (as a member of a group of scientists)
 
 
Fields of research
ETIS CLASSIFICATION: 4. Natural Sciences and Engineering; 4.10. Physics and Technical Physics
 
 
Additional information
Candidate of Sciences (Ph.D in Physics)
IPUT

Supervised dissertations

Publications

Category
Year
Publication
 
1.1.
2015
Bondar, V.; Grigorjeva, L.; Kärner, T.; Sidletskiy, O.; Smits, K.; Zazubovich, S.; Zolotarjovs, A. (2015). Thermally stimulated luminescence of undoped and Ce3+-doped Gd2SiO5 and (LuGd)2SiO5 single crystals. Journal of Luminescence, 159, 229−237. DOI: 10.1016/j.jlumin.2014.11.034.
1.1.
2014
Kärner, T.; Laguta, V.V.; Nikl, M.; Zazubovich, S. (2014). Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals. physica status solidi (b), 251 (4), 741−747. DOI: 10.1002/pssb.201350028.
1.1.
2014
Laguta, V.V.; Buryi, M.; Rosa, J.; Savchenko, D.; Hybler, J.; Nikl, M.; Zazubovich, S.; Kärner, T.; Stanek, C.R.; McClellan, K.J. (2014). Electron and hole traps in yttrium orthosilicate single crystals: the critical role of Si-unbound oxygen. Physical Review B, 90 (6), 064104-1−064104-12. DOI: 10.1103/PhysRevB.90.064104.
1.1.
2014
Kärner, T.; Laguta, V.V.; Nikl, M.; Shalapska, T.; Zazubovich, S. (2014). On the origin of Ce-related centers in lead-containing single crystalline films of Y2SiO5:Ce and Lu2SiO5:Ce. Journal of Physics D Applied Physics, 47 (6), 065303(1). DOI: 10.1088/0022-3727/47/6/065303.
1.1.
2013
Fabeni, P.; Krasnikov, A.; Kärner, T.; Laguta, V.V.; Nikl, M.; Pazzi, G.P.; Zazubovich, S. (2013). Luminescence and photo-thermally stimulated defects creation processes in PbWO4 crystals doped with trivalent rare-earth ions. Journal of Luminescence, 136, 42−50. DOI: 10.1016/j.jlumin.2012.11.004.
1.1.
2012
Lushchik, A.; Kärner, T.; Lushchik, Ch.; Schwartz, K.; Savikhin, F.; Shablonin, E.; Shugai, A.; Vasil'chenko, E. (2012). Electronic excitations to defect creation in wide-gap MgO and Lu3Al5O12 crystals irradiated with swift heavy ions. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 286, 200−208.10.1016/j.nimb.2011.11.016.
1.1.
2011
Babin, V.; Gorbenko, V.; Kondakova, I.; Kärner, T.; Laguta, V. V.; Nikl, M.; Zazubovich, S., Zorenko, Y. (2011). Time-resolved spectroscopy of exciton states in single crystals and single crystalline films of YAlO3 and YAlO3:Ce. Journal of Physics D Applied Physics, 44 (31), 315402. DOI: 10.1088/0022-3727/44/31/315402.
1.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E. (2011). Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 259−262.
1.1.
2011
Dolgov, S; Kärner, T; Lushchik, A; Maaroos, A; Nakonechnyi, S; Shablonin, E (2011). Trapped-hole centers in MgO single crystals. Physics of the Solid State, 53 (6), 1244−1252.10.1134/S1063783411060084.
1.1.
2011
Dolgov, S; Kärner, T; Lushchik, A.; Maaroos, A; Nakonechnyi, S; Shablonin, E. (2011). Локализованные дырки в монокристаллах MgO. Физика Твердого Тела, 53 (6), 1179−1187.
3.1.
2011
Kropman, Daniel; Karner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tonu; Londos, Charalampos (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. physica status solidi (c), 8 (3), 694−696. DOI: 10.1002/pssc.201000269.
3.1.
2011
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Laas, T.; Londos, C.A.; Misiuk, A. (2011). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 263−266. DOI: 10.4028/www.scientific.net/SSP.178-179.263.
6.6.
2011
Babin, V.; Grigorjeva, L.; Kondakova, I.; Kärner, T.; Laguta, V. V.; Nikl, M.; Smits, K.; Zazubovich, S.; Zorenko, Yu. (2011). Time-resolved spectroscopy of exciton states in single crystals, single crystalline films and powders of YAlO_3 and YAlO_3:Ce. 1−21.
1.1.
2010
Lushchik, A; Lushchik, Ch; Kärner, T; Liblik, P; Nagirnyi, V; Shablonin, E; Shugai, A; Vasil'chenko, E (2010). Franck-Hertz effect in cathodo- and photoluminescence of wide-gap materials. Radiation Measurements, 45, 268−272.10.1016/j.radmeas.2010.01.042.
1.1.
2010
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Thin Solid Films, 518 (9), 2374−2376. DOI: 10.1016/j.tsf.2009.09.011.
1.2.
2010
Krasnikov, A.; Kärner, T.; Kiisk, V; Laguta, V. V.; Nikl, M.; Sildos, I; Usuki, Y.; Zazubovich, S. (2010). Ultraviolet luminescence and creation of (WO4)3--type centers under UV irradiation of PbWO4 crystals doped with trivalent rare-earth ions. Journal of Physics Conference Series, 249 (1), 012001(1)−012001(8).
3.1.
2010
Kropman, D.; Mellikov, E.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skorupa, W.; Prucnal, S.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Gettering and Defect Engineering in Semiconductor Technology XIII, 145−148.
3.4.
2010
Kropman, D.; Kärner, T.; Dolgov, Sergei; Heinmaa, I.; Laas, T.; Londos, C. A. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties. The 9th International Conference on Global Research and Education. Riga, Latvia, 231−233.
1.1.
2009
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2009). Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties. Physica B Condensed Matter, 404, 5153−5155.
1.1.
2009
Fabeni, P.; Krasnikov, A.; Kärner, T.; Laguta, V.V.; Nikl, M.; Pazzi, G.P.; Zazubovich, S. (2009). Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region. Journal of Luminescence, 129, 767−772. DOI: 10.1016/j.jlumin.2009.02.011.
1.2.
2009
Lushchik, A.; Lushchik, Ch.; Kärner, T.; Nagirnyi, V.; Shablonin, E.; Vasil'chenko, E. (2009). Impact and nonimpact creation mechanisms of radiation defects in ionic crystals. Izvestiya VUZOV. Fisika (Russian Physics Journal), 52, 95−100.
1.3.
2009
Kärner, T. (2009). Inimene, ühiskond ja sotsiaalteaduste uus paradigma. Akadeemia, 2, 287−306.
1.1.
2008
Lushchik, A.; Lushchik, Ch.; Schwartz, K.; Vasil'chenko, E.; Kärner, T.; Kudryavtseva, I.; Isakhanyan, V.; Shugai, A. (2008). Stabilization and annealing of interstitials formed by radiation in binary metal oxides and fluorides. Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, 2868−2871. DOI: 10.1016/j.nimb.2008.03.132.
1.1.
2008
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Abru, U., Medvid, A. (2008). Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Solid State Phenomena, 131-133, 345−349.
5.2.
2008
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Volobueva, O.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A. (2008). Strain Relaxation Mechanism in the Si-SiO2 System and its Influence on the Interface Properties. Technologia. Kaunas 2008: Radiation Interaction with Materials and its use in Technologies. Kaunas, 24-27.09.2008. Ed. Grigonis, A. Kaünas: Lithuanian Academy of Sciences, 204−207.
1.1.
2007
Lushchik, A.; Feldbach, E.; Galajev, S.; Kärner, T.; Liblik, P.; Lushchik, Ch.; Maaroos, A.; Nagirnyi, V.; Vasil'chenko, E. (2007). Some aspects of radiation resistance of wide-gap metal oxides. Radiation Measurements, 42, 792−797.
1.2.
2007
Lushchik, A.; Kärner, T.; Lushchik, Ch.; Vasil'chenko, E.; Dolgov, S.; Issahhanyan, V.; Liblik, P. (2007). Dependence of long-lived defect creation on excitation density in MgO single crystals. physica status solidi (c), 4 (3), 1084−1087.
3.4.
2007
Mironova-Ulmane, N.; Poljakovs, M.; Pavlenko, A.; Piekstina, D.; Zvagule, T.; Churbakova, E.; Kurjane, N.; Gabrusheva, N.; Eglite, M.; Kärner, T. (2007). Estiamtion of internal and external exposition in retrospective dosimetry of Chernobyl clean-up workers. Medical Physics in Baltic States, 5: 5th International Conference on Medical Physics. Kaunas, Lithuania, 5-6 October, 2007. 55−59.
3.4.
2007
Dizhbite, T.; Mironova-Ulmane, N.; Volperts, A.; Andersone, A.; Jashina, L.; Kärner, T.; Telysheva, G. (2007). Elaboration and characterization of organic/inorganic hybrid nanopourous material incorporating Keggin-type Mo-Si polyanions. Journal of Physics: Conference Series, 93: Functional Materials and Nanotechnologies; Riga; 2–4 April 2007. DOI: 10.1088/1742-6596/93/1/012011.
5.1.
2007
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A. (2007). Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties. 11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts: 11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007. Manaus, Amazonas, Brasiilia, 122.
1.1.
2006
Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, I.; Medvid, A. (2006). Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties. Materials Science and Engineering B, 134, 222−226.
1.1.
2006
Nakonechnyi, S.; Karner, T.; Lushchik, A.; Lushchik, C.; Babin, V.; Feldbach, E.; Kudryavtseva, I.; Liblik, P.; Pung, L.; Vasi'lchenko, E. (2006). Low-temperature excitonic, electron-hole and interstitial-vacancy processes in LiF single crystals. Journal of Physics: Condensed Matter, 18 (2), 379−394.
1.2.
2006
Vasil’chenko, E.; Kudryavtseva, I.; Kärner, T.; Lushchik, A.; Nagirnyi, V.; Nakonechnyi, S. (2006). Creation of stable defects by VUV radiation, electrons and swift ions in LiFb crystals at 8 or 300 K. Russian Physics Journal, 49 (10), 111−114.
1.2.
2006
Lushchik, A; Dolgov, S; Kärner, T; Lushchik, Ch; Schwartz, K; Vasil’chenko, E. (2006). Peculiarities of long-lived defect creation under irradiation of metal fluorides and oxides by photons, electrons and ions. Russian Physics Journal, 49 (10), 9−12.
1.1.
2005
Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A. (2005). Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties. Gettering and Defect Engineering in Semiconductor Technology XI: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005. Ed. Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M. Trans Tech Publications Ltd, 333−338. (Solid State Phenomena; 108-109).
1.2.
2005
Issahanyan, V.; Kärner, T.; Maaroos, A.; Nakonechnyi, S. (2005). Spin relaxation processes in the defect hole centres of Be doped MgO single crystals. Physica Status Solidi A - Applications and Materials Science, 426−429.
1.2.
2005
Dolgov, S.; Feldbach, E.; Kärkkänen, A.; Kärner, T.; Liblik, P.; Maaroos, A.; Nakonechnyi, S. (2005). Low-temperature (4–295 K) thermoluminescence of pure and Ca-doped MgO single crystals. Physica Status Solidi, 2 (1), 422−425.
1.3.
2005
Kärner, T. (2005). Globaalsetest kriisidest. Akadeemia, 9, 1874−1890.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E (2004). Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation. Thin Solid Films, 459, 53−57.
1.1.
2004
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Liblik, P.; Maaroos, A.; Nakonechnyi, S. (2004). Luminescence of [Be](+) centre in MgO : Be. Radiation Measurements, 38, 699−702.
1.1.
2004
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M. (2004). Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation. Materials Science and Engineering B, 114-115, 295−298.
3.4.
2004
Kropman, D.; Kärner, T.; Abru, U.; Ugaste, Ü.; Mellikov, E. (2004). Point defects Interaction with Extended Defects in the Si-SiO2 System. Proceedings of IVC-16,: June 2004, Venice. SS1-TuP394 .
1.1.
2003
Karner, T.; Dolgov, SA.; Isakhanyan, V.; Maaroos, A.; Nakonechnyi, S. (2003). Paramagnetic centres in Be-doped MgO single crystals. Radiation Effects and Defects in Solids, 158, 163−166.
1.1.
2003
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Maaroos, A.; Nakonechnyi, S. (2003). Electron paramagnetic resonance of the [Be](+) centre in MgO : Be. Journal of Physics: Condensed Matter, 15 (40), 6871−6878.
1.1.
2003
Kropman, D.; Poll, V.; Kärner, T.; Ugaste, U.; Mellikov, E.; Abru, U.; Paomets, V. (2003). Investigation of the strain relaxation mechanism in the Si-SiO2 system during the process of its formation. physica status solidi (a), 198 (2), 297−301.
1.1.
2002
Dolgov, S.; Karner, T.; Lushchik, A.; Maaroos, A.; Mironova-Ulmane, N.; Nakonechnyi, S. (2002). Thermoluminescence centres created selectively in MgO crystals by fast neutrons. Radiation Protection Dosimetry, 100, 127−130.
1.1.
2002
Dolgov, SA.; Isakhanyan, V.; Karner, T.; Maaroos, A.; Nakonechnyi, S. (2002). VOH-Be - a new and unusual member in the family of V centres. Journal of Physics: Condensed Matter, 14 (38), 8881−8888.
1.1.
2002
Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E. (2002). Interaction between point defects in the Si-SiO2 system during the process of its formation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 186, 78−82.
1.1.
2001
Karner, T.; Dolgov, S.; Lushchik, A.; Mironova-Ulmane, N.; Nakonechnyi, S.; Vasilchenko, E. (2001). High-temperature thermoluminescence manifestations of anion interstitials in neutron-irradiated pure and doped single crystals of MgO. Radiation Effects and Defects in Solids, 155, 171−175.
1.1.
2001
Mironova-Ulmane, N.; Pavlenko, A.; Zvagule, T.; Karner, T.; Bruvere, R.; Volrate, A. (2001). Retrospective dosimetry for Latvian workers at Chernobyl. Radiation Protection Dosimetry, 96, 237−240.
1.1.
2001
Karner, T.; Dolgov, S.; Mironova-Ulmane, N.; Nakonechnyi, S.; Vasillchenko, E. (2001). Anion interstitials in neutron-irradiated MgO single crystals. Radiation Measurements, 33 (5), 625−628.
1.1.
2001
Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E. (2001). Interaction of point defects with extended defects in the Si-SiO2 system during its formation process. Diffusions in Materials: Dimat2000, Pts 1 & 2, 194-1, 1737−1742.
1.1.
2000
Kuck, S.; Fornasiero, L.; Heumann, E.; Mix, E.; Huber, G.; Karner, T.; Maaroos, A. (2000). Investigation of Cr-doped MgO and Sc2O3 as potential laser sources for the near infrared spectral range. Laser Physics, 10 (2), 411−416.
1.1.
2000
Kärner, T.; Dolgov, S.; Kirm, M.; Liblik, P.; Lushchik, A.; Maaroos, A.; Nakonechnyi, S. (2000). Electronic excitations and luminescence in MgO:Ge single crystals. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 166-167, 232−237.
1.1.
2000
Kropman, D.; Abru, U.; Karner, T. (2000). Defect structure relaxation process in the Si-SiO2 system. Applied Surface Science, 166, 475−479.
1.2.
2000
Luštšik, T.; Luštšik, A.; Kärner, T.; Kirm, M.; Dolgov, S. (2000). Relaxation, self-trapping and decay of electronic excitations in wide-gap oxides. Russian Physics Journal, 43 (3), 171−180.
3.4.
2000
Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo (2000). Point defects generation and redistribution in SiSiO2 system during the process of its formation. Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000: International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02. _EditorsAbbr P.Vincenzini, V.Buscaglia. Faenza: Techna, 491−496. (Advances in Science and Technology; 29).
1.1.
1999
Kuck, S.; Heumann, E.; Karner, T.; Maaroos, A. (1999). Continuous-wave room-temperature laser oscillation of Cr3+: MgO. Optics Letters, 24 (14), 966−968.
1.1.
1999
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U.; Strik, M. (1999). Impurity gettering investigation in the Si-SiO2 system. Solid State Phenomena, 70, 267−272.
1.1.
1999
Kropman, D.; Abru, U.; Samoson, A.; Karner, T. (1999). On the kinetics of generation of point defects in the Si-SiO2 system. Thin Solid Films, 344, 412−415.
1.1.
1999
Dolgov, SA.; Kirm, M.; Karner, T.; Lushchik, A.; Maaroos, A. (1999). Luminescence and hole center formation by VUV-radiation in MgO : Al and MgO : Ge crystals. Physica Scripta, 59 (6), 481−485.
1.1.
1998
Kirm, M.; Feldbach, E.; Karner, T.; Lushchik, A.; Lushchik, C.; Maaroos, A.; Nagirnyi, V.; Martinson, I. (1998). Multiplication of electron-hole pairs in MgO crystals and ceramics. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 141, 431−435.
1.1.
1998
Kropman, D.; Poll, V.; Tambek, L.; Karner, T.; Abru, U. (1998). Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system. Ultrasonics, 36 (10), 1021−1025.
3.2.
1998
Lushchik, Ch; Dolgov, S; Kärner, T; Käämbre, H; Lushchik, A; Savikhin, F. (1998). Three possible versions of luminescent dosimetry of fast neutrons in mixed neutron-gamma fields. V.S.Kortov, B.N.Shulgin, A.Ju.Kuznetsov. Solid State Detectors of Ionizing Radiation (13−29).. Ekaterinburg, Russia: Ural State Technical University.
1.1.
1997
Kropman, D.; Dolgov, S.; Karner, T. (1997). On point defect gettering by back-side damage in the Si-SiO2 system. Defect and Diffusion Forum, 143, 1027−1030.
1.1.
1997
Zazubovich, S.; Aceves, R.; Flores, MB.; Fabeni, P.; Karner, T.; Pazzi, GP.; Salas, RP.; Jaanson, N. (1997). Exciton 4.29 and 3.65 eV luminescence in CsI:Tl and CsI:Pb. Journal of Physics Condensed Matter, 9 (34), 7249−7256.
1.1.
1996
Kropman, D.; Dolgov, S.; Karner, T. (1996). On the kinetics of the generation of point defects in the Si-SiO2 system. Applied Physics A-Materials Science & Processing, 62 (5), 469−472.
1.1.
1994
Dolgov, SA.; Karner, T.; Maaroos, A.; Savihhina, T.; Vasilchenko, EA. (1994). Thermoluminescence and phosphorescence of vuv-irradiated and x-irradiated cao monocrystals at low-temperatures. physica status solidi (b), 186 (2), 581−590.
1.1.
1993
Kropman, D.; Karner, T. (1993). Esr investigation of the si-sio2 system. physica status solidi (a), 136 (1), 125−129.
1.1.
1992
Karner, T.; Dolgov, SA.; Feldbach, E.; Savikhin, FA.; Meriloo, I. (1992). Effect of subthreshold electron-irradiation on the microwave-absorption and luminescence of copper-free ba1-xkxbio3-type superconductors. Fizika Tverdogo Tela, 34 (11), 3429−3433.
1.2.
1992
Kärner, T.; Dolgov, S.A.; Feldbach, E.; Savikhin, F.A.; Meriloo, I. (1992). Influence of subthreshold-energy electrons on microwave absorption and luminescence of copper-free Ba1-xKxBiO3 superconductors. Soviet Physics: Solid State, 34, 1835−1838.
1.1.
1990
Antsigin, IN.; Gorbunov, SV.; Kruzhalov, AV.; Karner, TN. (1990). Formation and properties of v0-centers in beo. Fizika Tverdogo Tela, 32 (8), 2470−2472.
3.4.
1990
Lushchik, Ch.; Savikhin, F.; Kärner, T.; Feldbach, E.; Maaroos, A.; Bitov, I.; Dolgov, S.; Kudryavtseva, I.; Leib, T.; Liblik, P.; Meriloo, I. (1990). Is the subthreshold defect creation mechanism efficient in oxide dielectrics and superconductors. Proc. Intern. Workshop on Effects of Strong Disordering in HTSC, Zarechny, USSR (Moscow, 1990): Workshop on Effects of Strong Disordering in HTSC, Zarechny, USSR (Moscow, 1990). 185−193.
1.1.
1988
Denks, V.; Vasilchenko, EA.; Korsakov, VS.; Karner, T.; Seeman, V. (1988). Electron localization at the 3 sodium atoms in nonstoichiometric iodosodalite ceramic. Fizika Tverdogo Tela, 30 (1), 73−75.
1.1.
1986
Karner, TN.; Maaroos, AA.; Malysheva, AF.; Tazhigulov, BT. (1986). Fa+(be)-centers in mgo crystals. Fizika Tverdogo Tela, 28 (8), 2563−2565.
1.1.
1980
Karner, TN.; Malysheva, AF.; Maaroos, AA.; Murk, VV. (1980). Thermostimulated luminescence of mgo single-crystals in the temperature-range 4.2 to 600-k. Fizika Tverdogo Tela, 22 (4), 1178−1183.
1.1.
1978
Karner, TN.; Sorkin, BA. (1978). Hole processes in mgo crystals at photostimulated luminescence and electron-emission. Fizika Tverdogo Tela, 20 (9), 2696−2699.
1.1.
1976
Kalder, KA.; Kyarner, TN.; Lushchik, CB.; Malysheva, AF.; Milenina, RV. (1976). Exciton and electron-hole transfers of energy in mgo luminescent crystals. Izvestiya Akademii Nauk SSSR Seriya Fizicheskaya, 40 (11), 2313−2316.
18.04.2019

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Uus Frascati (2015)
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ProgrammLiikNumberNimiProjekti algusProjekti lõppVastutav täitjaAsutusFinantseerijapoolne rahastamine
SFSF0180037s07 Kiiritusnähtused laia keelutsooniga funktsionaalmaterjalides01.01.200731.12.2012Aleksandr LuštšikTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut1 423 152,37 EUR
ETFETF6652Defektitekke mittelöökmehhanismid metallioksiidides ja -fluoriidides01.01.200631.12.2008Aleksandr LuštšikTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond74 776,62 EUR
IUTIUT2-26Elektronergastuste muundumine luminestsentsiks ja kiiritusdefektideks laia keelutsooniga funktsionaalmaterjalides01.01.201331.12.2018Aleksandr LuštšikTartu Ülikool, Loodus- ja täppisteaduste valdkond, füüsika instituut1 815 000,00 EUR
MUUMLOFY07258REuratom Fusion, Euratom-Tekes Euroopa tuumasünteesiprogrammi ühisuuringud01.01.200831.12.2013Madis KiiskTartu Ülikool; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut267 086,78 EUR
SFSF0382148s02Fundamentaalnähtused laia keelutsooniga materjalides ja nende rakendusperspektiivid01.01.200231.12.2006Aleksandr LuštšikTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut992 931,38 EUR
ETFETF7825Nanomõõtmeliste defektide tekkeprotsessid suure tihedusega kiiritamisel ja laia keelutsooniga materjalide kiirituskindluse tõstmise väljavaated01.01.200931.12.2012Aleksandr LuštšikTartu Ülikool, Loodus- ja tehnoloogiateaduskond, Tartu Ülikooli Füüsika Instituut; Tartu Ülikool, Loodus- ja tehnoloogiateaduskond77 902,68 EUR