Electrical properties of TiO(2)-based MIM capacitors deposited by TiCl(4) and TTIP based atomic layer deposition processes

Hudec, Boris; Hus'ekova, Kristina; Tarre, Aivar; Jeong, Hwan Han; Sosa, Han; Rosova, Alica; Lee, Woongkyu; Kasikov, Aarne; Seul, Ji Song; Aarik, Jaan; Cheol, Song Hwang; Fröhlich, Karol (2011). Electric properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes. Microelectronic Engineering, 88 (7), 1514−1516.10.1016/j.mee.2011.03.059.
ajakirjaartikkel
Hudec, Boris; Hus'ekova, Kristina; Tarre, Aivar; Jeong, Hwan Han; Sosa, Han; Rosova, Alica; Lee, Woongkyu; Kasikov, Aarne; Seul, Ji Song; Aarik, Jaan; Cheol, Song Hwang; Fröhlich, Karol
  • Inglise
TiCl4 ja TTIP tuginevate aatomkihtsadestusprotsessidega sadestatud TiO2 põhinevate MIM-kondensaatorite elektrilised omadused
Electric properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
Microelectronic Engineering
0167-9317
88
7
2011
15141516
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

dx.doi.org/10.1016/j.mee.2011.03.059