Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

Kukli, K.; Ritala, M.; Sundqvist, J.; Aarik, J.; Lu, J.; Sajavaara, T.; Leskela, M.; Harsta, A. (2002). Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Journal of Applied Physics, 92 (10), 5698−5703.
ajakirjaartikkel
Kukli, K.; Ritala, M.; Sundqvist, J.; Aarik, J.; Lu, J.; Sajavaara, T.; Leskela, M.; Harsta, A.
  • Inglise
Journal of Applied Physics
Amer Inst Physics
0021-8979
92
10
2002
56985703
6
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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