Design Considerations for a Self-Powered Gate Driver for Normally-ON SiC Junction Field-Effect Transistors

Peftitsis, D.; Rabkowski, J.; Nee, H.-P. (2013). Design Considerations for a Self-Powered Gate Driver for Normally-ON SiC Junction Field-Effect Transistors. Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013. IEEE, 251−257.10.1109/ECCE-Asia.2013.6579105.
publitseeritud konverentsiettekanne
Peftitsis, D.; Rabkowski, J.; Nee, H.-P.
  • Inglise
Energy Conversion Congress and Exposition Asia 2013 - ECCE Asia 2013
IEEE
2013
251257
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

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dx.doi.org/10.1109/ECCE-Asia.2013.6579105

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