Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties

Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A. (2007). Hydrogen interaction with point defects in the Si-SiO2 system and its influence on the interface properties. 11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts: 11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007. Manaus, Amazonas, Brasiilia, 122.
publitseeritud konverentsiettekanne
Kropman, D.; Mellikov, E.; Kärner, T.; Heinmaa, I.; Ugaste, Ü.; Laas, T.; Medvid, A.
  • Inglise
11th International Conference on the Formation of Semiconductor Interfaces. From Semiconductors to Nanoscience, and Applications with Biology. Program and Abstracts
11th International Conference on the Formation of Semiconductor Interfaces, Manaus, Brasiilia, 19.-24. August 2007
Manaus, Amazonas, Brasiilia
2007
122
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5.1. Konverentsiteesid, mida kajastab Thomson Reuters Web of Science

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