Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface

Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J. (2010). Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface. Thin Solid Films, 518 (9), 2374−2376.10.1016/j.tsf.2009.09.011.
ajakirjaartikkel
Kropman, D.; Mellikov, E.; Öpik, A.; Lott, K.; Kärner, T.; Heinmaa, I.; Laas, T.; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Woznitsa, J.
  • Inglise
Thin Solid Films
0040-6090
518
9
2010
23742376
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

dx.doi.org/10.1016/j.tsf.2009.09.011