Interaction between point defects in the Si-SiO2 system during the process of its formation

Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E. (2002). Interaction between point defects in the Si-SiO2 system during the process of its formation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato, 186, 78−82.
ajakirjaartikkel
Kropman, D.; Karner, T.; Samoson, A.; Heinmaa, I.; Ugaste, U.; Mellikov, E.
  • Inglise
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Ato
0168-583X
186
2002
7882
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
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