Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection

Sadik, D.-P.; Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Rabkowski, J.; Nee, H.-P. (2014). Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection. Proceedings: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe). IEEE, 1−10.10.1109/EPE.2014.6910789.
publitseeritud konverentsiettekanne
Sadik, D.-P.; Colmenares, J.; Peftitsis, D.; Tolstoy, G.; Rabkowski, J.; Nee, H.-P.
  • Inglise
Proceedings
2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe)
IEEE
2014
110
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

Viited terviktekstile

dx.doi.org/10.1109/EPE.2014.6910789

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