The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Aidla, A. (2004). The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon. Semiconductor Science and Technology, 19 (9), 1141−1148.
ajakirjaartikkel
Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Aidla, A.
  • Inglise
Semiconductor Science and Technology
IOP Publishing Ltd
0268-1242
19
9
2004
11411148
8
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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