The Role of the Parasitic Capacitance of the Inductor in Boost Converters with Normally-On SiC JFETs

Zdanowski, M.; Rabkowski, J.; Kostov, K.; Nee, H.-P. (2012). The Role of the Parasitic Capacitance of the Inductor in Boost Converters with Normally-On SiC JFETs. 3: 7th International Power Electronics and Motion Control Conference (IPEMC). 1842 −1847.
publitseeritud konverentsiettekanne
Zdanowski, M.; Rabkowski, J.; Kostov, K.; Nee, H.-P.
  • Inglise
The Role of the Parasitic Capacitance of the Inductor in Boost Converters with Normally-On SiC JFETs
7th International Power Electronics and Motion Control Conference (IPEMC)
3
2012
1842 1847
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

Seotud asutused

Lisainfo