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Point defects generation and redistribution in SiSiO2 system during the process of its formation

Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo (2000). Point defects generation and redistribution in SiSiO2 system during the process of its formation. Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000: International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02. Ed. P.Vincenzini, V.Buscaglia. Faenza: Techna, 491−496. (Advances in Science and Technology; 29).
publitseeritud konverentsiettekanne
Kropman, D.; Abru, U.; Kärner, Tiit; Ugaste, Ülo
  • Inglise
Mass and charge transport in inorganic materials : fundamentals to devices ; proceedings of the International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices", Lido di Jesolo, Venice, Italy, May 28 - June 2, 2000
P.Vincenzini, V.Buscaglia
International Conference on "Mass and Charge Transport in Inorganic Materials - Fundamentals to Devices" ; (Venice, Italy) : 2000.05.28-06.02
Faenza
Techna
88-86538-30-8
Advances in Science and Technology
29
2000
491496
Ilmunud
3.4. Artiklid/ettekanded, mis on avaldatud valdkonda 3.1. mittekuuluvates konverentsikogumikes

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