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Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties

Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A. (2005). Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties. Gettering and Defect Engineering in Semiconductor Technology XI: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005. Ed. Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M. Trans Tech Publications Ltd, 333−338. (Solid State Phenomena; 108-109).
publitseeritud konverentsiettekanne
Kropman, D.; Abru, U.; Karner, T.; Ugaste, U.; Mellikov, E.; Kauk, M.; Heinmaa, I.; Samoson, A.; Medvid, A.
  • Inglise
Punkt defektide interaktsioon lisanditega süsteemis Si-SiO2
Gettering and Defect Engineering in Semiconductor Technology XI
Pichaud B.; Claverie, A.; Alquier, D.; Richter, H.; Kittler, M.
11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005
Trans Tech Publications Ltd
1012-0394
3-908451-13-2
Solid State Phenomena
108-109
2005
333338
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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