Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction

Rabkowski, J.; Platek, T. (2015). Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction. Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe). Geneva , Switzerland: IEEE, P.1−P.10.
publitseeritud konverentsiettekanne
Rabkowski, J.; Platek, T.
  • Inglise
Proceedings of the 17th Conference on Power Electronics and Applications (EPE’15-ECCE Europe)
Geneva , Switzerland
IEEE
9789075815238
2015
P.1P.10
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

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