Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis

Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas (2016). Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis. Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016): 15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016. Ed. Toomas Rang, Peeter Ellervee. Tallinn: TTU Press, 35−38. (IEEE Catalo Number: CFP16BEC-USB).BEC.2016.7743722.
publitseeritud konverentsiettekanne
Toompuu, Jana; Sleptsuk, Natalja; Korolkov, Oleg; Rang, Toomas
  • Inglise
Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis
Baltic Electronics Conference. The 15th Biennial Baltic Electronics Conference (BEC2016)
Toomas Rang, Peeter Ellervee
15th Biennial Baltic Electronics Conference (BEC2016) Tallinn, Estonia, October 3-5, 2016
Tallinn
TTU Press
978-1-5090-1392-0
IEEE Catalo Number: CFP16BEC-USB
2016
3538
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

Viited terviktekstile

10.1109/BEC.2016.7743722