Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates

Kukli, K.; Ritala, M.; Pilvi, T.; Aaltonen, T.; Aarik, J.; Lautala, M.; Leskela, M. (2005). Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates. Materials Science and Engineering B, 118, 112−116.
ajakirjaartikkel
Kukli, K.; Ritala, M.; Pilvi, T.; Aaltonen, T.; Aarik, J.; Lautala, M.; Leskela, M.
  • Inglise
Materials Science and Engineering B
Elsevier Science SA
0921-5107
118
2005
112116
5
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile