Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding

Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T. (2008). Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding. 2008 International Baltic Electronics Conference BEC2008: Baltic Electronics Conference 2008, Tallinn, Oct. 6-8. Ed. Toomas Rang. Tallinn, Estonia, IEEE copyright: Tallinn University of Technology Press, 91−94.
publitseeritud konverentsiettekanne
Korolkov, O.; Sleptsuk, N.; Sitnikova, A.; Rang, T.
  • Inglise
Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding
2008 International Baltic Electronics Conference BEC2008
Toomas Rang
Baltic Electronics Conference 2008, Tallinn, Oct. 6-8
Tallinn, Estonia, IEEE copyright
Tallinn University of Technology Press
1736-3705
978-1-4244-2059-9
2008
9194
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

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