Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Lu, J.; Aarik, J.; Sundqvist, J.; Kukli, K.; Harsta, A.; Carlsson, JO. (2005). Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate. Journal of Crystal Growth, 273, 510−514.
ajakirjaartikkel
Lu, J.; Aarik, J.; Sundqvist, J.; Kukli, K.; Harsta, A.; Carlsson, JO.
  • Inglise
Journal of Crystal Growth
Elsevier Science BV
0022-0248
273
2005
510514
5
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile