Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J. (2004). Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon. Journal of Applied Physics, 96 (3), 1365−1372.
ajakirjaartikkel
Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.
  • Inglise
Journal of Applied Physics
Amer Inst Physics
0021-8979
96
3
2004
13651372
8
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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