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Cu2(ZnxSn2-x)(SyS1-y)4 Monograin Materials for Photovoltaics

Mellikov, E.; Altosaar, M.; Raudoja, J.; Timmo, K.; Volobujeva, O.; Kauk, M.; Krustok, J.; Varema, T.; Grossberg, M.; Danilson, M.; Muska, K.; Ernits, K.; Lehner, F.; Meissner, D. (2011). Cu2(ZnxSn2-x)(SyS1-y)4 Monograin Materials for Photovoltaics. In: George G. Wicks et al. (Eds.) (Ed.). Materials Challenges in Alternative and Renewable Energy (137−141). American Ceramic Society. (Ceramic Transactions; 224). DOI: 10.1002/9781118019467.ch14.
artikkel / peatükk kogumikus
Mellikov, E.; Altosaar, M.; Raudoja, J.; Timmo, K.; Volobujeva, O.; Kauk, M.; Krustok, J.; Varema, T.; Grossberg, M.; Danilson, M.; Muska, K.; Ernits, K.; Lehner, F.; Meissner, D.
  • Inglise
Materials Challenges in Alternative and Renewable Energy
George G. Wicks et al. (Eds.)
Wiley
978-1-1180-1605-3
224
Ceramic Transactions
224
2011
137141
141
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Web of Science Book Citation Index, Web of Science Conference Proceedings Citation Index, Scopus refereeritud kogumikud)
Ei

Viited terviktekstile

doi.org/10.1002/9781118019467.ch14

Seotud asutused

Tallinn University of Technology; Crystalsol OÜ

Lisainfo

© 2011 by The American Ceramic Society. All rights reserved. In monograin solar cells powders replace wafers or thin films. This allows for cheaper and much more efficient materials production and minimize materials loss. The separation of materials formation from the module fabrication-allowing for all temperatures and purity precautions-is the very important advantage of the monograin layer based technology. Large area module fabrication proceeds without any high temperature steps in a continuous roll-to-roll process. No up-scaling problems arise as is typical of thin-film technologies since a homogenous powder leads to homogenous modules. The influence of different technological parameters to the materials properties was studied and from CZTS=Cu2(ZnxSn2-x)(SySe1-y)4) monograin powders solar cells have produced with parameters Voc up to 690 mV, fill factors up to 65 % and I sc more than 20 mA/cm2. It was founded that changing of the sulfur/selenium ratio allows a change of 1.04 and 1.72 eV the band gap of Cu2(ZnxSn2-x)(SySe1-y)4.
https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/9781118019467.indauth