High-frequency isolated DC-DC converter with GaN HEMTs

Zdanowski, Mariusz; Kozdroj, Kamil; Rabkowski, Jacek. (2017). High-frequency isolated DC-DC converter with GaN HEMTs. 2017 Progress in Applied Electrical Engineering (PAEE), 5-30 June 2017, Koscielisko, Poland.. IEEE, 1−6.10.1109/PAEE.2017.8009023.
publitseeritud konverentsiettekanne
Zdanowski, Mariusz; Kozdroj, Kamil; Rabkowski, Jacek.
  • Inglise
2017 Progress in Applied Electrical Engineering (PAEE), 5-30 June 2017, Koscielisko, Poland.
IEEE
978-1-5386-1528-7
2017
16
Ilmunud
3.1. Artiklid/peatükid lisas loetletud kirjastuste välja antud kogumikes (kaasa arvatud Thomson Reuters Book Citation Index, Thomson Reuters Conference Proceedings Citation Index, Scopus refereeritud kogumikud)

Viited terviktekstile

doi.org/10.1109/PAEE.2017.8009023

Seotud asutused

Warsaw University of Technology

Lisainfo

Gallium Nitride; HEMT transistors; DC-DC isolated converter; high – frequency; power losses; RC snubber