Point defects interaction with extended defects in the Si-SiO2 system during the process of its formation

Kropman, D.; Kärner, T.; Abru, U.; Strik, M.; Ugaste, Ülo (2000). Point defects interaction with extended defects in the Si-SiO2 system during the process of its formation. In: Fifth International conference on diffusion in materials DIMAT 2000. July 17-21, 2000, Paris, France : abstracts (p. 147−0).. Paris,: -.
kogumikuartikkel/peatükk raamatus/kogumikus
Kropman, D.; Kärner, T.; Abru, U.; Strik, M.; Ugaste, Ülo
  • Inglise
Fifth International conference on diffusion in materials DIMAT 2000. July 17-21, 2000, Paris, France : abstracts
Paris,
-
2000
p. 1470
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
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