Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation

Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M. (2004). Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation. Materials Science and Engineering B, 114-115, 295−298.
ajakirjaartikkel
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E.; Kauk, M.
  • Inglise
Materials Science and Engineering B
0921-5107
114-115
2004
295298
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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