Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons

Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T. (2019). Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons. Semiconductors, 53 (7), 975−978.10.1134/S1063782619070133.
ajakirjaartikkel
Korolkov, O. M.; Kozlovski, V. V.; Lebedev, A. A.; Sleptsuk, N.; Toompuu, J.; Rang, T.
  • Inglise
Semiconductors
1063-7826
53
7
2019
975978
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

doi.org/10.1134/S1063782619070133