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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal-Insulator-Metal (MIM) Devices for Memory Applications

Dueñas, Salvador; Castán, Helena; García, Hector; Ossorio, Óscar González; Domínguez, Luis Antonio; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, Jaan (2018).

The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

. Journal of Electronic Materials, 47 (9), 4938−4943.10.1007/s11664-018-6105-0.
ajakirjaartikkel
Dueñas, Salvador; Castán, Helena; García, Hector; Ossorio, Óscar González; Domínguez, Luis Antonio; Seemen, Helina; Tamm, Aile; Kukli, Kaupo; Aarik, Jaan
  • Inglise

The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

JOURNAL OF ELECTRONIC MATERIALS
Journal of Electronic Materials
NEW YORK
0361-5235
47
9
47
2018
49384943
6
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

dx.doi.org/10.1007/s11664-018-6105-0