Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation

Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E (2004). Interaction between point defects, extended defects and impurities in the Si-sio2 system during the process of its formation. Thin Solid Films, 459, 53−57.
ajakirjaartikkel
Kropman, D.; Karner, T.; Abru, U.; Ugaste, U.; Mellikov, E
  • Inglise
Thin Solid Films
Lausanne
Elsevier Science SA
0040-6090
459
2004
5357
5
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

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