Atomic layer deposition of HfO2: Effect of structure development on growth rate, morphology and optical properties of thin films

Rammula, R.; Aarik, J.; Mändar, H.; Ritslaid, P.; Sammelselg, V. (2010). Atomic layer deposition of HfO2: Effect of structure development on growth rate, morphology and optical properties of thin films. Applied Surface Science, 257 (3), 1043−1052.10.1016/j.apsusc.2010.07.105.
ajakirjaartikkel
Rammula, R.; Aarik, J.; Mändar, H.; Ritslaid, P.; Sammelselg, V.
  • Inglise
Applied Surface Science
0169-4332
257
3
2010
10431052
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

dx.doi.org/10.1016/j.apsusc.2010.07.105