Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties

Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E. (2011). Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties. Solid State Phenomena, 178-179, 259−262.www.scientific.net/SSP.178-179.259.
ajakirjaartikkel
Kropman, D.; Mellikov, E.; Kärner, T.; Laas, T.; Medvid, A.; Onufrijevs, P.; Dauksta, E.
  • Inglise
Solid State Phenomena
178-179
2011
259262
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

dx.doi.org/www.scientific.net/SSP.178-179.259