Interaction of point defects with extended defects in the Si-SiO2 system during its formation process

Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E. (2001). Interaction of point defects with extended defects in the Si-SiO2 system during its formation process. Diffusions in Materials: Dimat2000, Pts 1 & 2, 194-1, 1737−1742.
ajakirjaartikkel
Kropman, D.; Karner, T.; Abru, U.; Strik, M.; Ugaste, U.; Mellikov, E.
  • Inglise
Diffusions in Materials: Dimat2000, Pts 1 & 2
SciTEC Publications Ltd
194-1
2001
17371742
6
Ilmunud
1.1. Teadusartiklid, mis on kajastatud Web of Science andmebaasides Science Citation Index Expanded, Social Sciences Citation Index, Arts & Humanities Citation Index ja/või andmebaasis Scopus (v.a. kogumikud)
WOS

Viited terviktekstile

Lisainfo

Article
ISI Web of Science